ADVANCED APT8030B2VR POWER TECHNOLOGY 800V 27A 0.3002 POWER MOS v Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. - Faster Switching * 100% Avalanche Tested - Lower Leakage > New T-MAX Package G (Clip-mounted TO-247 Package) i) MAXIMUM RATINGS All Ratings: Tg = 25C unless otherwise specified. Symbol | Parameter APT8030B2VR UNIT Voss Drain-Source Voltage 800 Volts Ib Continuous Drain Current @ Tg = 25C 27 @) Amps lom Pulsed Drain Current 108 Vas Gate-Source Voltage Continuous +30 Vol olts Vesm Gate-Source Voltage Transient +40 p Total Power Dissipation @ Tc, = 25C 520 Watts p Linear Derating Factor 4.16 wre TT stg | Operating and Storage Junction Temperature Range -55 to 150 C Ty, Lead Temperature: 0.063" from Case for 10 Sec. 300 laR Avalanche Current (Repetitive and Non-Repetitive) 27 Amps Ear Repetitive Avalanche Energy O 50 mJ Eas Single Pulse Avalanche Energy 2500 STATIC ELECTRICAL CHARACTERISTICS Symbol | Characteristic / Test Conditions MIN TYP MAX UNIT BVgg | Drain-Source Breakdown Voltage (V,. = OV, |, = 250pA) 800 Volts lb(on) On State Drain Current @ (Vos > | bon) X Rogion) Max, Vas = 10V) 27 Amps Roscon) Drain-Source On-State Resistance @ (Vos = 10V, 0.5 loicont) 0.300 | Ohms Zero Gate Voltage Drain Current (Vos = Voge? Vos = 0V) 95 A PSS | Zero Gate Voltage Drain Current (Vi. = 0.8 Vice: Vag = OV, Ty = 125C) o50 | - lass Gate-Source Leakage Current (Vag = +80V, Vos = 0V) +100 nA Vesith) Gate Threshold Voltage (Vig = Vas? Ly = 2.5mA) 2 4 Volts Was CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA ( APT Website - htip:/www.advancedpower.com } 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadra Nord F-33700 Merignac - France Phone: (33) 557921515 FAX: (33) 5 56 47 97 61 050-5613 Rev B 050-5613 Rev B DYNAMIC CHARACTERISTICS APT8030B2VR Symbol | Characteristic Test Conditions MIN TYP MAX UNIT Co. Input Capacitance Vg = OV 6600 | 7900 C..5 | Output Capacitance Vog = 25V 645 900 pF C., | Reverse Transfer Capacitance f= 1 MHz 320 480 Q, Total Gate Charge @ Vas = 10V 340 510 Qs Gate-Source Charge Vop = 9-5 Vigs 31 47 nc Qa | Gate-Drain ("Miller") Charge Ib = lotconty @ 25C 170 | 250 ton) | Turn-on Delay Time Veg = 15V 16 32 t Rise Time Vp = 9-5 Vigs 14 28 ; I= @ 25C ns tyoty | Turn-off Delay Time b= 'D[cont] 59 90 t, Fall Time Rg = 0.62 8 16 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol | Characteristic / Test Conditions MIN TYP MAX UNIT Is Continuous Source Current (Body Diode) 27 A mps lon Pulsed Source Current (Body Diode) 108 Vsp Diode Forward Voltage @ (Vag = OV, Is = lotcont) 1.3 Volts t. Reverse Recovery Time (I, = lorconty dl/dt = 100A/us) 850 ns tr Reverse Recovery Charge (I, = lorcontp dl./dt = 100A/ps) 92 uC THERMAL CHARACTERISTICS Symbol | Characteristic MIN TYP MAX UNIT Rojc | Junction to Case 0.24 oCW Roja | Junction to Ambient 40 @ Repetitive Rating: Pulse width limited by maximum junction temperature. @ Pulse Test: Pulse width < 380 pS, Duty Cycle < 2% See MIL-STD-750 Method 3471 @ Starting Tj = +25C, L = 6.86mH, Rg = 259, Peak IL = 27A These dimensions are equal to the TO-247AD without mounting hole APT Reserves the right to change, without notice, the specifications and information contained herein. 0.3 = S 0.1 O SQ 0.05 < a lu ao = z = 0.01 oc lw 7 0.005 2 SINGLE PULSE 3 N 0.001 105 104 103 betp | Duty Factor D = itp Peak Ty =Ppm x Zocot+Teo 102 1071 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Ip DRAIN CURRENT (AMPERES) Ip DRAIN CURRENT (AMPERES) Ip, DRAIN CURRENT (AMPERES) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE Rpg(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) APT8030B2VR Vag=5.5V, 6V, 7V, 10V & 15V 50 40 5V 30 20 4v 0 0 100 200 300 400 Vpg: DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 100 Ty =-55C / Ty = 425C] Ty = 125C 80 L L Vpg> Ip (ON) x Rpg (ON)MAX. 60 }} = 250uSEC. PULSE TEST / @ <0.5 % DUTY CYCLE , / Ty =+125C 20 poe ! | TTI Ty = +25C eT, = -55C 5 Ane 0 2 4 6 8 Vag: GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 30 25 20 0 25 50 75 100 125 150 Tg, CASE TEMPERATURE (C) 25 [p= 05 Ip [Cont] Vag = 10V 2.0 1.5 1.0 0.5 0.0 0 -25 0 25 50 75 100 125 150 Ty, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 50 Vgg=15V Vgg=10V Gg=5-5V, BV &7V Nm wo oO Oo Ip DRAIN CURRENT (AMPERES) 3 4v 0 0 4 8 12 16 Vpg DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 14 NORMALIZED TO Veg = 10V @ 05 Ip [Cont] wo to a ua o Rpg(ON), DRAIN-TO-SOURCE ON RESISTANCE 2 ~o 10 20 30 40 50 60 Ip, DRAIN CURRENT (AMPERES) FIGURE 5, R,,(ON) vs DRAIN CURRENT a ua on 1.05 1.00 0.95 BV gg, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 0.90 -0 -25 0 25 50 75 100 125 150 Ty, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 a ua 1.0 0.9 0.8 0.7 Veg(TH), THRESHOLD VOLTAGE (NORMALIZED) 0.6 0 -25 0 25 50 75 100 125 150 Tg, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5613 Rev B 050-5613 Rev B APT8030B2VR 200 30,000 100 10nS n w 50 | unmen By ayy 100nS 40,000 Wi c S & 5,000 < 10 ims WW 5 Zz i 5 = om x 10mS g 3 & 1,000 << Zz 100mS 3 & Te =+25C DC 500 a 5 AT) =4+150C a 4 100 1 5 10 50 100 800 01 4 1 10 50 Vpg DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vpg DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE o 20 Ip = Ip [Cont] @ 200 3 400 = a, Vps=100V & Ty =4150C YF Ty =425C Ww o Vpg=250V = 50 4 Vpg=400V a Oo 12 oa > a 2 O 3 oc a) z 10 Q 8 fe a a e ye Lu rc & 4 uu S aa o or nO a oO o > 0 4 1 0 100 200 300 400 500 600 0 0.4 08 12 1.6 2.0 Qg, TOTAL GATE CHARGE (nC) Vgp: SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE T-MAX Package Outline << 4.69 (.185) 5.31 (.209) 15.49 (.610) yp] pel 1.49 (.059) 46.26 (640) >| I 2.49 (098) y 5.38 (.212) te 6.20 (.244) | LO ; nl 20.80 (.819) Q ~ @ g ' 21.46 (.845) a | 4.50 (.177) Max. < oe (133 0.40 (.016 || 1.65 (.065) I< 079 (oat 19.81 (.780) 2:13 (084) 20.32 (.800) ir Gate 1.01 (.040) 1.40 (.055) -~ Drain I= Source . 2.24 (.087) the BE SS parma]! le 2-Ples. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058