TA76431F/FR
2004-07-01
1
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA76431F, TA76431FR
Adjustable Precision Shunt Regulator
Features
• Precision Reference Voltage: VREF = 2.495 V ± 2%
• Small Temperature Coefficient: |αVREF| = 46 ppm/°C
• Adjustable Output Voltage: VREF ≤ VOUT ≤ 36 V
• Low Dynamic Output Impedance: |ZKA| = 0.15 Ω (Typ.)
• Small Flat Package
• TA76431FR is a new Toshiba shunt regulator.
This device’s pin assignment is the reverse of that of the
TA76431F.
Functional Block Diagram Circuit Symbol
This IC contains electrostatic sensitive elements. Please take care to avoid generating static electricity when
handling these devices.
Marking
(1) TA76431F (2) TA76431FR
Weight: 0.05 g (ty p.)
Reference (REF) Cathode (K)
Anode (A)
Reference (REF) Cathode (K)
Anode (A)
A S
Part No. (or abbreviation code)
Lot No.
(weekly code)
A line indi ca tes
lead (Pb)-free package or
lead (Pb)-free finish.
B S
Part No. (or abbreviation code)
Lot No.
(weekly code)
A line indi ca tes
lead (Pb)-free package or
lead (Pb)-free finish.
TA76431F/FR
2004-07-01
2
Pin Assignment
No. (1) TA76431F (2) TA76431FR
1 Cathode (K) Reference (REF)
2 Anode (A) Anode (A)
3 Reference (REF) Cathode (K)
How to Order
No. Product No. Package Type Packing Type Minimum
Order
TA76431F On cut tape (TE12L): 100/tape section 100
(1) TA76431F (TE12L) Embossed tape: 1000/tape 1 tape
TA76431FR On cut tape (TE12L): 100/tape section 100
(2) TA76431FR (TE12L)
PW-MINI (SOT-89) (surface-mount type)
Embossed tape: 1000/tape 1 tape
Equivalent Circuit
1 2 3
R2
Q11
Cathode
R3
C1
R5
R7
R6
R4
C2
R9
R8
Q2
Reference
Anode
R1
Q1
Q7
Q6
Q8
Q9
Q4
Q5
Q3
Q10
TA76431F/FR
2004-07-01
3
min
max
VREF
(
dev
)
∆Ta
VREF
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Cathode voltage VKA 37 V
Cathode current IK −100~150 mA
Reference voltage VREF 7 V
Reference current IREF 50
µA
Reference-anode reverse current −IREF 10 mA
500
Power dissipation (Ta = 25°C) PD 1000 (Note) mW
Operating temperature Topr −40~85 °C
Storage temperature Tstg −55~150 °C
Note: Mounted on ceramic subst r ate ( 250 mm2 × 0.8 mm t)
Recomm end ed Operating Co ndition s
Characteristics Symbol Min Typ. Max Unit
Cathode voltage VKA V
REF ⎯ 36 V
Cathode current IK 1 ⎯ 100 mA
Operating temperature Topr −40 ⎯ 85 °C
Electrical Characteristics
(Unless otherwise specified, Ta = 25°C, IK = 10 mA)
Characteristics Symbol Test Condition Min Typ. Max Unit
Reference voltage VREF V
KA = VREF 2.440 2.495 2.550 V
Deviation of reference input voltage
over temperature VREF (dev) 0°C
<
=
Ta
<
=
70°C, VKA = VREF ⎯ 8 17 mV
VREF
<
=
VKA
<
=
10 V ⎯ 0.8 2.7 Ratio of change i n refer ence inpu t
voltage to the change in cathode
voltage ∆VREF/∆V10 V
<
=
VKA
<
=
36 V ⎯ 0.5 2.0
mV/V
Reference Input current IREF V
KA = VREF ⎯ 1.4 4 µA
Deviation of reference input current
over temperature IREF (dev) 0°C
<
=
Ta
<
=
70°C, VKA = VREF,
R1 = 10 kΩ, R2 = ∞ ⎯ 0.3 1.2 µA
Minimum cathode current for
regulation IKmin V
KA = VREF ⎯ 0.4 1.0 mA
Off-State cathode current IKoff V
KA = 36 V, VREF = 0 V ⎯ ⎯ 1.0 µA
Dynamic impedance ⎪ZKA⎪ VKA = VREF, f
<
=
1 kHz,
1 mA
<
=
IK
<
=
100 mA ⎯ 0.15 0.5 Ω
The deviation parameters VREF (dev) and IREF (dev) are defined as the
maximum variation of the VREF and IREF over the rated temperature
range.
The average temperature coefficient of the VREF is defined as:
()
Cppm
Ta
6
10
C@25
REF
V(dev)REF
V
REF
V°
∆
×
⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
°
=α
TA76431F/FR
2004-07-01
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Test Paramete r
(1) VKA = VREF Mode (2) VKA > VREF Mode
(3) OFF-State Mode
Typic al Application Ci rcui ts
(1) 2.5 V Reference (2) Shunt Regulator
Input VKA
IK
RSD
VREF
Input VKA
RSD
IKoff
VOUT ∼
−2.5 V
VIN
R1
VOUT
RSD
R2
VIN
GND
1
R
REF
I
2
R1
R
1
REF
V
OUT
V⋅+
⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛+=
R1
Input VKA
IK
RSD
IREF
R2
VREF
1
R
REF
I
2
R1
R
1
REF
V
KA
V⋅+
⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛+=
TA76431F/FR
2004-07-01
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Cathode voltage VKA (V)
IK – VKA
Cathode current IK (mA)
Ambient temperature Ta (°C)
VREF – Ta
Cathode voltage VKA (V)
IK – VKA
Cathode current IK (µA)
Cathode voltage VKA (V)
∆VREF – VKA
Change in reference voltage ∆VREF (mV)
Ambient temperature Ta (°C)
IKoff – Ta
Off state cathode current IKoff (nA)
Ambient temperature Ta (°C)
IREF – Ta
Reference current IREF (µA)
50
−100
−2.0 −1.0 0 1.0 3.0 4.0 2.0
−50
0
100
150
VKA = VREF
Ta = 25°C
Input VKA
IK
2520
2400
−80 −40 0 40 120 160 80
2440
2480
2560
2600
VREF max = 2550 mV
VKA = VREF
IK = 10 mA Input
VKA
IK
VREF
VREF typ. = 2495 mV
VREF mi n = 2440 mV
400
−200
−2.0 −1.0 0 1.0 3.0 4.0 2.0
0
200
600
800
VKA = VREF
Ta = 25°C
Input VKA
IK
IK min
−40 0 40 80 120 160
V
KA = 36 V
V
REF = 0 V
Input VKA
IKoff
100
10
1
3
5
30
50
0
4
−40
1
2
3
0 40 80 120
I
K = 10 mA
Input VKA
IK
10kΩ
IREF
Reference voltage VREF (mV)
−40
0
0 50
−30
−20
−10
10 20 30 40
Input
R1
VKA
IK
VREF
R2
IK = 10 mA
Ta = 25°C
TA76431F/FR
2004-07-01
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Frequency f (Hz)
ZKA – f
Dynamic impedance ZKA (Ω)
Frequency f (Hz)
AV – f
Open loop voltage gain AV (dB)
Time t (µs)
Puls e res pon se
Voltage sw ing (Ｖ)
Ambient temperature Ta (°C)
PD max – Ta
Allowable power dissipation PD max (W)
Load cap acitance CL (
µF)
Safe operating area
Cathode current IK (mA)
0.1
1
10
50
3
0.3
10 k 100 k 1 M
1 k
30
5
0.5
eo
IK
220 Ω
RS
GND
ei S
R
i
eo
e
KA
Z
KA
Z
S
Ri
e
o
e
KA
Z
S
R
KA
Z
KA
Z
S
Ri
e
o
e
・
・
＞
・
=∴
=
+
=
Ta = 25°C
VKA = VREF
1 mA ≦ −IK ≦ 100 mA
3
00 1 2 3 5 6 4
1
2
0
5
Output 220 Ω
GND
50 Ω
Pulse
Generator
f = 100 kHz
Input
monitor
Input
Output
20 0 40 60
100 120
1.4
0.6
0
0.2
0.4
0.8
1.0
80 140 160
1.2
125°C/W
250°C/W
(1)
(2)
(1) Mounted on ceramic substate
(250 mm2 × 0.8 mm t)
(2) Ta = 25°C
10 M 1 M 100 k1 k
−10
0
10
10 k
20
30
40
50
60
IK = 10 mA
Ta = 25°C
IK
220 Ω
10 kΩ 10 kΩ
10 µF
VIN
VOUT
GND
100
0
20
40
60
80
D. Unstable
0.001 0.003 0.03 1 10 3 0.01 0.1
C. Unstable
0.3 5 100 30
StableStable B. Unstable
A. Unstable T es t cir cu it fo r curve A
IK
CL
150 Ω
Test circu it for curve B, C, D
IK
150 Ω
CL
Ta = 25°C
A. VKA = VREF
B. VKA = 5 V @IK = 10 mA
C. VKA = 10 V @IK = 10 mA
D. VKA = 15 V @IK = 10 mA
TA76431F/FR
2004-07-01
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Package Dimensions
Weight: 0. 05 g (typ.)
TA76431F/FR
2004-07-01
8
• The inform ation contained herein is subject to chang e wit hout notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
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set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc. .
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(computer , per sonal equipm ent , off ic e equipment, me asuri ng equipm ent, i ndust r ial r obotics, domest ic appli ances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
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and sold, under any law and regul ations.
030619EBA
RESTRICTIONS ON PRODUCT USE
