MBRF1060CT
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : ITO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.7 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE
- 60
Volts
FORWARD CURRENT
- 10
Amperes
10
125
MBRF1060CT
60
42
60
10000
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
T
J
Operating Temperature Range
C
T
STG
Storage Temperature Range
C
Typical Thermal Resistance (Note 3)
R
0JC
C/W
C
J
Typical Junction Capacitance,
per element (Note 2) pF
I
R
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ
=25 C
@T
J
=125 C
mA
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
V
F
Maximum Forward
Voltage, (Note 1) V
Voltage Rate of Change (Rated VR)
T
J
=125 C
T
J
=25 C
T
J
=125 C
@I
F
=5A
@I
F
=5A
@I
F
=10A
dv/dt
Maximum Average Forward RectifiedCurrent
at T
C
=120 C (See Fig.1)
-55 to +150
-55 to +175
4.0
220
0.1
15
0.65
0.80
0.90
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
V/us
SEMICONDUCTOR
LITE-ON
REV. 2, Aug-2007, KTHC50
ITO-220AB
PIN 1
PIN 3 PIN 2
All Dimensions in millimeter
ITO-220AB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B
15.50 16.50
10.40
10.0
3.00 3.50
9.30 9.00
2.90 3.60
13.46 14.22
1.15 1.70
0.75
2.70
N
M
L
K
J
I 1.00
2.40
0.70 0.45
3.00 3.30
4.36 4.77
2.48 2.80
2.80
2.50
G
I
C
E
J
B
K
A
M
D
L
N
F
HH
PIN
1 2 3
V
dis
V
Dielectric Strengh from terminals to case,
AC with t=1 minute, RH<30%
2000
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
0
1
10
100
1000
10000
0 20 40 60 80 100 120
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0
RATING AND CHARACTERISTIC CURVES
MBRF1060CT
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
15 10 50 100
220
0
25
50
75
100
125
150
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
25
75 100 125 150
4
0
50
16
175
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS
REVERSE CURRENT ,(uA)
T
J
= 125 C
T
J
= 25 C
8.3ms Single Half-Sine-Wave
12
0
8
RESISTIVE OR INDUCTIVE LOAD
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT ,(A)
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
PULSE WIDTH 300us
2% Duty cycle
T
J
= 25 C
FIG.5 - TYPICAL JUNCTION CAPACITANCE
CAPACITANCE , (pF)
REVERSE VOLTAGE , VOLTS
10
1100
1000
100
10
0.1
CASE TEMPERATURE , C
4
T
J
= 25 C, f= 1MHz
