Philips Semiconductors Product specification PNP general purpose transistors BCW69; BCW70 FEATURES PINNING e Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT23 plastic package. [4 3 NPN complements: BCW71 and BCW72. 3 1 MARKING TYPE NUMBER MARKING CODE) I 1 I 5 2 BCW69 H1* BCW70 Hox Top view MAM256 Note 1. * =p: Made in Hong Kong. Fig.1 Simplified outline (SOT23) and symbol. * = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VcsBo collector-base voltage open emitter - 50 Vv VcEo collector-emitter voltage open base; Ic = -2 mA - 45 Vv VeBo emitter-base voltage open collector - -5 V Ic collector current (DC) - 100 mA lcm peak collector current - 200 mA IBM peak base current - 200 mA Prot total power dissipation Tamb < 25 C - 250 mw Tstg storage temperature 65 +150 C Tj junction temperature - 150 C Tamb operating ambient temperature 65 +150 C 1999 Apr 19 2 Philips Semiconductors Product specification PNP general purpose transistors BCWe69; BCW70 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rih ja thermal resistance from junction to ambient note 1 500 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT IcBo collector cut-off current le = 0; Veg = -20 V - - -100 |nA lz = 0; Vop = -20 V; T; = 100 C - - -10 HA lEBo emitter cut-off current Ic =0; Vep=-5 V - - -100 |nA hee DC current gain Io =-10 WA; Vee =-5 V BCW69 - 90 - BCW70 - 150 - DC current gain Ic =-2 MA; Voce =-5 V BCW69 120 - 260 BCW70 215 - 500 VceEsat collector-emitter saturation Ic =-10 mA; Ip =-0.5 mA - 80 -300 | mV voltage Ic = -50 mA; Ip = -2.5 mA; note 1 | -150 |- mV VeEsat base-emitter saturation voltage Ic =-10 mA; Ip =-0.5 mA - -720 |- mV Ic = -50 mA; Ip =-2.5 mA; note 1 | - -810 | - mV VeE base-emitter voltage Ic =-2 MA; Veg =-5 V -600 |- -750 |mV Cy collector capacitance le = le = 0; Veg = -10 V; f = 1 MHz | - 4.5 - pF ine transition frequency Ic =-10 mA; Vce = -5 V; 100 - - MHz f = 100 MHz F noise figure Io = 200 WA; Voce = -5 V; - - 10 dB Rs = 2 kQ; f = 1 kHz; B = 200 Hz Note 1. Pulse test: tp < 300 us; 6 < 0.02. 1999 Apr 19 Philips Semiconductors Product specification PNP general purpose transistors BCW69; BCW70 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 ++ ++ 4 1 | | 2 } Cc 1 1 4 EI oe! | Lepore [e] detail X 0 1 2mm Leroirriiriitiiiiiiiiit scale DIMENSIONS (mm are the original dimensions) Ay UNIT A max. bp c D E e e; He Lp Q v w 11 0.48 0.15 3.0 1.4 25 0.45 0.55 mm | o9 | %' | 038 | 009 | 28 | 12 | 19 | 9% |] 24 | ots | 045 | O2 | 1 REFERENCES OUTLINE EUROPEAN VERSION IEC JEDEC EIAJ PROJECTION ISSUE DATE SOT23 a 97-02-28 1999 Apr 19 4