Freescale Semiconductor Technical Data Document Number: AFT09S200W02N Rev. 0, 4/2014 RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 56 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 716 to 960 MHz. 900 MHz Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 1400 mA, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D (%) Output PAR (dB) ACPR (dBc) IRL (dB) 920 MHz 19.2 34.0 6.9 --35.7 --25 940 MHz 19.3 35.1 7.0 --36.0 --20 960 MHz 19.2 36.5 6.8 --34.8 --13 AFT09S200W02NR3 AFT09S200W02GNR3 716-960 MHz, 56 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTORS OM--780--2L PLASTIC AFT09S200W02NR3 700 MHz Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 1400 mA, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D (%) Output PAR (dB) ACPR (dBc) IRL (dB) 716 MHz 22.7 37.5 6.9 --34.7 --18 722 MHz 22.6 37.2 6.9 --34.6 --19 728 MHz 22.5 36.9 6.9 --34.6 --18 Features Designed for Wide Instantaneous Bandwidth Applications Greater Negative Gate--Source Voltage Range for Improved Class C Operation Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions Optimized for Doherty Applications In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel. OM--780G--2L PLASTIC AFT09S200W02GNR3 RFin/VGS 2 1 RFout/VDS (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Freescale Semiconductor, Inc., 2014. All rights reserved. RF Device Data Freescale Semiconductor, Inc. AFT09S200W02NR3 AFT09S200W02GNR3 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +70 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 C Case Operating Temperature Range TC --40 to +125 C Operating Junction Temperature Range (1,2) TJ --40 to +225 C Symbol Value (2,3) Unit RJC 0.35 C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 56 W CW, 28 Vdc, IDQ = 1400 mA, 940 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) B Charge Device Model (per JESD22--C101) IV Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 5 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 729 Adc) VGS(th) 1.0 1.5 2.0 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1400 mA) VGS(Q) -- 2.15 -- Vdc Fixture Gate Quiescent Voltage (4) (VDD = 28 Vdc, ID = 1400 mA, Measured in Functional Test) VGG(Q) 3.2 4.3 5.2 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 4.1 Adc) VDS(on) 0.1 0.2 0.3 Vdc Characteristic Off Characteristics On Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. VGG = 2.0 VGS(Q). Parameter measured on Freescale Test Fixture, due to resistor divider network on the board. Refer to Test Fixture Layout. (continued) AFT09S200W02NR3 AFT09S200W02GNR3 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1,2) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 56 W Avg., f = 960 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 18.5 19.2 21.5 dB Drain Efficiency D 32.5 36.5 -- % Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss PAR 6.5 6.8 -- dB ACPR -- --34.8 --33.5 dBc IRL -- --13 --9 dB Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1400 mA, f = 940 MHz VSWR 10:1 at 32 Vdc, 260 W CW Output Power (3 dB Input Overdrive from 180 W CW Rated Power) No Device Degradation Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 920-960 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB -- 200 -- W -- --11.5 -- VBWres -- 140 -- MHz Gain Flatness in 40 MHz Bandwidth @ Pout = 56 W Avg. GF -- 0.1 -- dB Gain Variation over Temperature (--30C to +85C) G -- 0.018 -- dB/C P1dB -- 0.004 -- dB/C AM/PM (Maximum value measured at the P3dB compression point across the 920--960 MHz frequency range) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Output Power Variation over Temperature (--30C to +85C) 1. Part internally matched both on input and output. 2. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. AFT09S200W02NR3 AFT09S200W02GNR3 RF Device Data Freescale Semiconductor, Inc. 3 C25 VGG C2 R1 C10 VDD C11 R2 C3 C14 C8 R3 C19* C6* C17 C7* R4 CUT OUT AREA C1* C16 C20 C23 C21 C22 C24* C18* C9 C15 C4 C12 VGG C13 VDD C5 AFT09S200W02N/--14N Rev. 0 D49362 *C1, C6, C7, C18, C19 and C24 are mounted vertically. Figure 2. AFT09S200W02NR3 Test Circuit Component Layout -- 920-960 MHz Table 6. AFT09S200W02NR3 Test Circuit Component Designations and Values -- 920-960 MHz Part Description Part Number Manufacturer C1, C3, C4, C14, C15, C24 47 pF Chip Capacitors ATC100B470JT500XT ATC C2, C5, C8, C9, C10, C11, C12, C13 10 F Chip Capacitors C5750X7S2A106M230KB TDK C6, C7 2.7 pF Chip Capacitors ATC100B2R7BT500XT ATC C16, C17 5.6 pF Chip Capacitors ATC100B5R6CT500XT ATC C18, C19 2.0 pF Chip Capacitors ATC100B2R0BT500XT ATC C20, C21 1.0 pF Chip Capacitors ATC100B1R0BT500XT ATC C22, C23 0.3 pF Chip Capacitors ATC100B0R3BT500XT ATC C25 220 F, 100 V Electrolytic Capacitor EEV-FK2A221M Panasonic-ECG R1, R2 1000 , 1/4 W Chip Resistors CRCW12061K00FKEA Vishay R3, R4 10 , 1/8 W Chip Resistors RK73H2ATTD10R0F KOA Speer PCB Rogers RO4350B, 0.020, r = 3.66 D49362 MTL AFT09S200W02NR3 AFT09S200W02GNR3 4 RF Device Data Freescale Semiconductor, Inc. 30 Gps, POWER GAIN (dB) 19 18 17 20 VDD = 28 Vdc, Pout = 56 W (Avg.) IDQ = 1400 mA, Single--Carrier W--CDMA 10 3.84 MHz Channel Bandwidth --22 Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF --26 Gps 16 15 ACPR 14 PARC --30 13 --34 12 --38 11 820 IRL 840 860 880 900 920 940 --3 --8 --13 --18 --23 --42 960 --28 980 --2 --2.8 --3.6 --4.4 --5.2 PARC (dB) 40 IRL, INPUT RETURN LOSS (dB) 50 D 20 ACPR (dBc) 21 D, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS -- 920-960 MHz --6 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 56 Watts Avg. 0 VDD = 28 Vdc, Pout = 186 W (PEP), IDQ = 1400 mA Two--Tone Measurements, (f1 + f2)/2 = Center --15 Frequency of 940 MHz IM3--U --30 IM3--L IM5--U --45 IM7--U IM5--L IM7--L --60 --75 1 10 200 100 TWO--TONE SPACING (MHz) 20 0 19 18 17 16 15 VDD = 28 Vdc, IDQ = 1400 mA, f = 940 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF --1 50 --10 D Gps --1 dB = 28 W 30 --3 20 --3 dB = 56 W --4 --5 0 40 --2 dB = 41 W --2 60 ACPR 15 PARC 30 45 60 75 --20 --30 ACPR (dBc) 1 D DRAIN EFFICIENCY (%) 21 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 4. Intermodulation Distortion Products versus Two--Tone Spacing --40 10 --50 0 --60 90 Pout, OUTPUT POWER (WATTS) Figure 5. Output Peak--to--Average Ratio Compression (PARC) versus Output Power AFT09S200W02NR3 AFT09S200W02GNR3 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS -- 920-960 MHz 960 MHz 940 MHz 920 MHz 19 VDD = 28 Vdc, IDQ = 1400 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 18 17 960 MHz D 50 --10 30 ACPR 960 MHz 920 MHz 940 MHz 1 0 40 Gps 16 15 60 10 100 20 10 0 200 --20 --30 --40 ACPR (dBc) Gps, POWER GAIN (dB) 20 920 MHz 940 MHz D, DRAIN EFFICIENCY (%) 21 --50 --60 Pout, OUTPUT POWER (WATTS) AVG. Figure 6. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 24 25 20 15 Gain 5 12 --5 IRL --15 8 4 0 IRL (dB) GAIN (dB) 16 VDD = 28 Vdc Pin = 0 dBm IDQ = 1400 mA 800 850 900 --25 950 1000 1050 1100 1150 --35 1200 f, FREQUENCY (MHz) Figure 7. Broadband Frequency Response AFT09S200W02NR3 AFT09S200W02GNR3 6 RF Device Data Freescale Semiconductor, Inc. VDD = 28 Vdc, IDQ = 1484 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource () Zin () 920 1.94 - j4.69 2.09 + j4.54 940 2.29 - j5.04 2.41 + j4.89 960 2.98 - j5.40 2.82 + j5.25 Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 0.625 - j0.97 17.7 54.0 253 51.4 -6 0.611 - j1.00 17.4 53.9 245 49.2 -6 0.653 - j1.12 17.2 53.8 239 49.0 -6 Max Output Power P3dB f (MHz) Zsource () Zin () 920 1.94 - j4.69 2.09 + j4.64 940 2.29 - j5.04 2.43 + j4.99 960 2.98 - j5.40 2.83 + j5.37 Zload () (2) Gain (dB) (dBm) (W) D (%) AM/PM () 0.566 - j1.00 15.3 55.2 333 53.8 -9 0.564 - j1.06 15.0 55.1 325 52.5 -9 0.578 - j1.11 14.8 55.0 318 52.0 -8 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Figure 8. Load Pull Performance -- Maximum Power Tuning VDD = 28 Vdc, IDQ = 1484 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB Gain (dB) (dBm) (W) D (%) AM/PM () 1.36 - j0.05 21.1 51.6 144 65.6 -12 2.45 + j4.99 1.33 - j0.14 20.8 51.6 145 63.6 -11 2.87 + j5.33 1.30 - j0.35 20.2 51.9 154 62.5 -10 f (MHz) Zsource () Zin () 920 1.94 - j4.69 2.10 + j4.65 940 2.29 - j5.04 960 2.98 - j5.40 Zload () (1) Max Drain Efficiency P3dB f (MHz) Zsource () Zin () Zload (2) () 920 1.94 - j4.69 2.12 + j4.72 1.34 - j0.18 18.9 52.8 191 68.6 -17 940 2.29 - j5.04 2.47 + j5.10 1.30 - j0.13 18.8 52.5 179 67.1 -17 960 2.98 - j5.40 2.89 + j5.44 1.27 - j0.35 18.2 52.8 191 65.6 -15 Gain (dB) (dBm) (W) D (%) AM/PM () (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Figure 9. Load Pull Performance -- Maximum Drain Efficiency Tuning Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload AFT09S200W02NR3 AFT09S200W02GNR3 RF Device Data Freescale Semiconductor, Inc. 7 1 1 0.5 0.5 0 E 50 --0.5 --1 51.5 51 50.5 0 E 60 62 58 --0.5 56 --1 54 52 P --1.5 --2 0.5 48 50 53 53.5 --1.5 52 52.5 P IMAGINARY () IMAGINARY () P1dB -- TYPICAL LOAD PULL CONTOURS -- 940 MHz 1 1.5 2 2.5 48 --2 0.5 3 1 1.5 2 2.5 3 REAL () Figure 10. P1dB Load Pull Output Power Contours (dBm) Figure 11. P1dB Load Pull Efficiency Contours (%) 1 1 0.5 0.5 21.5 0 E 21 --0.5 --1 20 P 17.5 --1.5 --2 0.5 18.5 18 IMAGINARY () IMAGINARY () REAL () 20.5 19.5 19 --16 --14 --12 --18 0 E --10 --0.5 --8 --1 P --6 --1.5 1 1.5 2 2.5 3 --2 0.5 --4 1 1.5 2 2.5 REAL () REAL () Figure 12. P1dB Load Pull Gain Contours (dB) Figure 13. P1dB Load Pull AM/PM Contours () NOTE: P = Maximum Output Power E = Maximum Drain Efficiency 3 Gain Drain Efficiency Linearity Output Power AFT09S200W02NR3 AFT09S200W02GNR3 8 RF Device Data Freescale Semiconductor, Inc. P3dB -- TYPICAL LOAD PULL CONTOURS -- 940 MHz 1 1 0.5 0.5 51 0 E 52 --0.5 --1 P --1.5 55 51.5 52.5 53 53.5 IMAGINARY () IMAGINARY () 56 54 54.5 0 E 66 64 --0.5 62 60 58 --1 P 56 54 --1.5 52 --2 0.5 1 1.5 2 2.5 --2 0.5 3 1 1.5 2 2.5 3 REAL () Figure 14. P3dB Load Pull Output Power Contours (dBm) Figure 15. P3dB Load Pull Efficiency Contours (%) 1 1 0.5 0.5 19.5 0 E 18.5 --0.5 IMAGINARY () IMAGINARY () REAL () 19 18 17.5 --1 P 17 16.5 --1.5 --2 0.5 15.5 --22 --20 --18 0 E --14 --12 --0.5 --10 --1 P --8 --1.5 --6 16 1 1.5 2 2.5 3 --16 --2 0.5 1 1.5 2 2.5 REAL () REAL () Figure 16. P3dB Load Pull Gain Contours (dB) Figure 17. P3dB Load Pull AM/PM Contours () NOTE: P = Maximum Output Power E = Maximum Drain Efficiency 3 Gain Drain Efficiency Linearity Output Power AFT09S200W02NR3 AFT09S200W02GNR3 RF Device Data Freescale Semiconductor, Inc. 9 ALTERNATIVE CHARACTERIZATION -- 716--728 MHz C28 C14 VGG C3 C12 R1 VDD R2 C4 C13 C15 C11 R3 C2 C9* C10* C1* C8 R4 C21 CUT OUT AREA C7 C22 C23 C25 C24 C26 C27* C16 C18 C20 C6 VDD C17 VGG C5 C19 AFT09S200W02N/--14N Rev. 0 D49362 *C1, C9, C10, and C27 are mounted vertically. Figure 18. AFT09S200W02NR3 Test Circuit Component Layout -- 716-728 MHz Table 7. AFT09S200W02NR3 Test Circuit Component Designations and Values -- 716-728 MHz Part Description Part Number Manufacturer C1, C4, C6, C12, C13, C17, C18, C27 68 pF Chip Capacitors ATC100B680JT500XT ATC C2 1.1 pF Chip Capacitor ATC100B1R1BT500XT ATC C3, C5, C11, C14, C15, C16, 15 F Chip Capacitors C19, C20 C5750X7S2A156M250KB TDK C7, C8, C21, C22 5.1 pF Chip Capacitors ATC100B5R1CT500XT ATC C9, C10 9.1 pF Chip Capacitors ATC100B9R1CT500XT ATC C23, C24 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC C25, C26 1.7 pF Chip Capacitors ATC100B1R7BT500XT ATC C28 220 F, 100 V Electrolytic Capacitor EEV-FK2A221M Panasonic-ECG R1, R2 1000 , 1/4 W Chip Resistors CRCW12061K00FKEA Vishay R3, R4 10 , 1/8 W Chip Resistors RK73H2ATTD10R0F KOA Speer PCB Rogers RO4350B, 0.020, r = 3.66 D49362 MTL AFT09S200W02NR3 AFT09S200W02GNR3 10 RF Device Data Freescale Semiconductor, Inc. Gps, POWER GAIN (dB) 24 22 Gps 20 18 30 VDD = 28 Vdc, Pout = 56 W (Avg.) IDQ = 1400 mA, Single--Carrier W--CDMA 20 10 PARC 16 14 10 8 710 --26 --5 --34 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF IRL 725 --0 --30 ACPR 12 --22 740 755 770 785 800 --38 --42 815 --10 --15 --20 --25 830 --2 --3 --4 --5 --6 PARC (dB) 40 D IRL, INPUT RETURN LOSS (dB) 50 26 ACPR (dBc) 28 D, DRAIN EFFICIENCY (%) ALTERNATIVE CHARACTERIZATION--716-728 MHz --7 f, FREQUENCY (MHz) Figure 19. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 56 Watts Avg. 23 D 716 MHz 716 MHz 722 MHz 0 50 --10 40 Gps 22 60 30 728 MHz 21 20 ACPR 20 722 MHz 716 MHz 728 MHz 19 1 10 100 10 0 200 --20 --30 --40 ACPR (dBc) 24 Gps, POWER GAIN (dB) 728 MHz 722 MHz VDD = 28 Vdc, IDQ = 1400 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF D, DRAIN EFFICIENCY (%) 25 --50 --60 Pout, OUTPUT POWER (WATTS) AVG. Figure 20. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 28 35 VDD = 28 Vdc Pin = 0 dBm IDQ = 1400 mA GAIN (dB) 20 25 15 Gain 16 5 IRL (dB) 24 --5 12 IRL 8 --15 4 550 600 650 700 750 800 850 900 --25 950 f, FREQUENCY (MHz) Figure 21. Broadband Frequency Response AFT09S200W02NR3 AFT09S200W02GNR3 RF Device Data Freescale Semiconductor, Inc. 11 PACKAGE DIMENSIONS AFT09S200W02NR3 AFT09S200W02GNR3 12 RF Device Data Freescale Semiconductor, Inc. AFT09S200W02NR3 AFT09S200W02GNR3 RF Device Data Freescale Semiconductor, Inc. 13 AFT09S200W02NR3 AFT09S200W02GNR3 14 RF Device Data Freescale Semiconductor, Inc. AFT09S200W02NR3 AFT09S200W02GNR3 RF Device Data Freescale Semiconductor, Inc. 15 AFT09S200W02NR3 AFT09S200W02GNR3 16 RF Device Data Freescale Semiconductor, Inc. AFT09S200W02NR3 AFT09S200W02GNR3 RF Device Data Freescale Semiconductor, Inc. 17 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model .s2p File Development Tools Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Apr. 2014 Description Initial Release of Data Sheet AFT09S200W02NR3 AFT09S200W02GNR3 18 RF Device Data Freescale Semiconductor, Inc. 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