AFT09S200W02NR3 AFT09S200W02GNR3
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 56 W RF power LDMOS transistors are designed for cellular base
station applications requiring very wide instantaneous bandwidth capability
covering the frequency range of 716 to 960 MHz.
900 MHz
Typical Single--Carrier W--CDMA Performance: VDD =28Vdc,
IDQ = 1400 mA, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
920 MHz 19.2 34.0 6.9 --35.7 -- 2 5
940 MHz 19.3 35.1 7.0 --36.0 -- 2 0
960 MHz 19.2 36.5 6.8 --34.8 -- 1 3
700 MHz
Typical Single--Carrier W--CDMA Performance: VDD =28Vdc,
IDQ = 1400 mA, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
716 MHz 22.7 37.5 6.9 --34.7 -- 1 8
722 MHz 22.6 37.2 6.9 --34.6 -- 1 9
728 MHz 22.5 36.9 6.9 --34.6 -- 1 8
Features
Designed for Wide Instantaneous Bandwidth Applications
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Able to Withstand Extremely High Output VSWR and Broadband
Operating Conditions
Optimized for Doherty Applications
In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel.
Document Number: AFT09S200W02N
Rev. 0, 4/2014
Freescale Semiconductor
Technical Data
716–960 MHz, 56 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTORS
AFT09S200W02NR3
AFT09S200W02GNR3
Figure 1. Pin Connections
(Top View)
RFout/VDS
21
RFin/VGS
OM--780--2L
PLASTIC
AFT09S200W02NR3
OM--780G--2L
PLASTIC
AFT09S200W02GNR3
Note: Exposed backside of the package is
the source terminal for the transistor.
Freescale Semiconductor, Inc., 2014.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
AFT09S200W02NR3 AFT09S200W02GNR3
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +70 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg --65 to +150 C
Case Operating Temperature Range TC--40 to +125 C
Operating Junction Temperature Range (1,2) TJ--40 to +225 C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 80C, 56 W CW, 28 Vdc, IDQ = 1400 mA, 940 MHz
RJC 0.35 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) B
Charge Device Model (per JESD22--C101) IV
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3260 C
Table 5. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =70Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 5 Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 Adc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D= 729 Adc)
VGS(th) 1.0 1.5 2.0 Vdc
Gate Quiescent Voltage
(VDS =28Vdc,I
D= 1400 mA)
VGS(Q) —2.15 —Vdc
Fixture Gate Quiescent Voltage (4)
(VDD =28Vdc,I
D= 1400 mA, Measured in Functional Test)
VGG(Q) 3.2 4.3 5.2 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=4.1Adc)
VDS(on) 0.1 0.2 0.3 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
4. VGG =2.0VGS(Q). Parameter measured on Freescale Test Fixture, due to resistor divider network on the board. Refer to Test Fixture Layout.
(continued)
AFT09S200W02NR3 AFT09S200W02GNR3
3
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (1,2) (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 1400 mA, Pout = 56 W Avg., f = 960 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5MHzOffset.
Power Gain Gps 18.5 19.2 21.5 dB
Drain Efficiency D32.5 36.5 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 6.5 6.8 —dB
Adjacent Channel Power Ratio ACPR —--34.8 --33.5 dBc
Input Return Loss IRL — -- 1 3 -- 9 dB
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1400 mA, f = 940 MHz
VSWR 10:1 at 32 Vdc, 260 W CW Output Power
(3 dB Input Overdrive from 180 W CW Rated Power)
No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 1400 mA, 920–960 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —200 — W
AM/PM
(Maximum value measured at the P3dB compression point across
the 920--960 MHz frequency range)
—-- 11 . 5 —
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres —140 —MHz
Gain Flatness in 40 MHz Bandwidth @ Pout =56WAvg. GF—0.1 —dB
Gain Variation over Temperature
(--30Cto+85C)
G — 0.018 —dB/C
Output Power Variation over Temperature
(--30Cto+85C)
P1dB —0.004 —dB/C
1. Part internally matched both on input and output.
2. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
4
RF Device Data
Freescale Semiconductor, Inc.
AFT09S200W02NR3 AFT09S200W02GNR3
Figure 2. AFT09S200W02NR3 Test Circuit Component Layout — 920–960 MHz
*C1, C6, C7, C18, C19 and C24 are mounted vertically.
C1*
C2
C3
R1
R2
R3
C6*
C7*
R4
C4
C5
C8
C9
C10 C11
C14
C25
C17
C16
C19*
C18*
C21
C20 C23
C22
C24*
C15
C13
C12
AFT09S200W02N/--14N
Rev. 0
D49362
CUT OUT AREA
VGG
VGG
VDD
VDD
Table 6. AFT09S200W02NR3 Test Circuit Component Designations and Values — 920–960 MHz
Part Description Part Number Manufacturer
C1, C3, C4, C14, C15, C24 47 pF Chip Capacitors ATC100B470JT500XT ATC
C2, C5, C8, C9, C10, C11,
C12, C13
10 F Chip Capacitors C5750X7S2A106M230KB TDK
C6, C7 2.7 pF Chip Capacitors ATC100B2R7BT500XT ATC
C16, C17 5.6 pF Chip Capacitors ATC100B5R6CT500XT ATC
C18, C19 2.0 pF Chip Capacitors ATC100B2R0BT500XT ATC
C20, C21 1.0 pF Chip Capacitors ATC100B1R0BT500XT ATC
C22, C23 0.3 pF Chip Capacitors ATC100B0R3BT500XT ATC
C25 220 F, 100 V Electrolytic Capacitor EEV-FK2A221M Panasonic-ECG
R1, R2 1000 , 1/4 W Chip Resistors CRCW12061K00FKEA Vishay
R3, R4 10 , 1/8 W Chip Resistors RK73H2ATTD10R0F KOA Speer
PCB Rogers RO4350B, 0.020,r=3.66 D49362 MTL
AFT09S200W02NR3 AFT09S200W02GNR3
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 920–960 MHz
IRL, INPUT RETURN LOSS (dB)
820
ACPR
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 56 Watts Avg.
-- 2 3
-- 3
-- 8
-- 1 3
-- 1 8
11
21
20
19
-- 4 2
50
40
30
20
-- 2 2
-- 2 6
-- 3 0
-- 3 4
D, DRAIN
EFFICIENCY (%)
Gps, POWER GAIN (dB)
18
17
16
15
14
13
12
840 860 880 900 920 940 960 980
10
-- 3 8
-- 2 8
ACPR (dBc)
PARC
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 7 5
0
-- 1 5
-- 3 0
-- 6 0
1 200
IMD, INTERMODULATION DISTORTION (dBc)
-- 4 5
IM5--U
IM5--L
IM7--L
IM7--U
VDD =28Vdc,P
out = 186 W (PEP), IDQ = 1400 mA
Two--Tone Measurements, (f1 + f2)/2 = Center
Frequency of 940 MHz
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
Pout, OUTPUT POWER (WATTS)
-- 1
-- 3
30
0
-- 2
-- 4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
15 45 60 90
0
60
50
40
30
20
10
DDRAIN EFFICIENCY (%)
-- 3 d B = 5 6 W
75
D
ACPR
PARC
ACPR (dBc)
-- 6 0
0
-- 1 0
-- 2 0
-- 4 0
-- 3 0
-- 5 0
21
Gps, POWER GAIN (dB)
20
19
18
17
16
15
Gps
-- 1 d B = 2 8 W
-- 2 d B = 4 1 W
IRL
PARC (dB)
-- 5 . 2
-- 2
-- 2 . 8
-- 3 . 6
-- 4 . 4
-- 6
-- 5
Gps
IM3--L
1VDD =28Vdc,I
DQ = 1400 mA, f = 940 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
D
100
IM3--U
VDD =28Vdc,P
out =56W(Avg.)
IDQ = 1400 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
6
RF Device Data
Freescale Semiconductor, Inc.
AFT09S200W02NR3 AFT09S200W02GNR3
TYPICAL CHARACTERISTICS — 920–960 MHz
1
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 1 0
-- 2 0
15
21
0
60
50
40
30
20
D, DRAIN EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
20
19
10 100 200
10
-- 6 0
ACPR (dBc)
18
17
16
0
-- 3 0
-- 4 0
-- 5 0
Figure 7. Broadband Frequency Response
0
24
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQ = 1400 mA
16
12
8
GAIN (dB)
20
4
800 850 900 950 1000 1050 1100 1150 1200
-- 3 5
25
15
5
-- 5
-- 1 5
IRL (dB)
-- 2 5
Gain
VDD =28Vdc,I
DQ = 1400 mA
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01%
Probability on CCDF
IRL
920 MHz
940 MHz
960 MHz
920 MHz
940 MHz
960 MHz
920 MHz
940 MHz
960 MHz
Gps
AFT09S200W02NR3 AFT09S200W02GNR3
7
RF Device Data
Freescale Semiconductor, Inc.
VDD =28Vdc,I
DQ = 1484 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
920 1.94 - j4.69 2.09 + j4.54 0.625 - j0.97 17.7 54.0 253 51.4 -6
940 2.29 - j5.04 2.41 + j4.89 0.611 - j1.00 17.4 53.9 245 49.2 -6
960 2.98 - j5.40 2.82 + j5.25 0.653 - j1.12 17.2 53.8 239 49.0 -6
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
920 1.94 - j4.69 2.09 + j4.64 0.566 - j1.00 15.3 55.2 333 53.8 -9
940 2.29 - j5.04 2.43 + j4.99 0.564 - j1.06 15.0 55.1 325 52.5 -9
960 2.98 - j5.40 2.83 + j5.37 0.578 - j1.11 14.8 55.0 318 52.0 -8
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 8. Load Pull Performance — Maximum Power Tuning
VDD =28Vdc,I
DQ = 1484 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
920 1.94 - j4.69 2.10 + j4.65 1.36 - j0.05 21.1 51.6 144 65.6 -12
940 2.29 - j5.04 2.45 + j4.99 1.33 - j0.14 20.8 51.6 145 63.6 -11
960 2.98 - j5.40 2.87 + j5.33 1.30 - j0.35 20.2 51.9 154 62.5 -10
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
920 1.94 - j4.69 2.12 + j4.72 1.34 - j0.18 18.9 52.8 191 68.6 -17
940 2.29 - j5.04 2.47 + j5.10 1.30 - j0.13 18.8 52.5 179 67.1 -17
960 2.98 - j5.40 2.89 + j5.44 1.27 - j0.35 18.2 52.8 191 65.6 -15
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 9. Load Pull Performance — Maximum Drain Efficiency Tuning
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
8
RF Device Data
Freescale Semiconductor, Inc.
AFT09S200W02NR3 AFT09S200W02GNR3
P1dB -- TYPICAL LOAD PULL CONTOURS — 940 MHz
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
IMAGINARY ()
-- 2
1
0
IMAGINARY ()
1.5 22.50.5 3
0.5
-- 0 . 5
-- 1
-- 1 . 5
1
-- 2
1
0
IMAGINARY ()
1.5 22.50.5 3
0.5
-- 0 . 5
-- 1
-- 1 . 5
1
60 58
56 54 52
48
REAL ()
-- 2
1
0
IMAGINARY ()
1.5 22.50.5 3
0.5
-- 0 . 5
-- 1
-- 1 . 5
1
62
50
48
-- 2
1
0
-- 0 . 5
-- 1
0.5
1 1.5 2 2.5 30.5
-- 1 . 5
52.5
53
52 51
50
51.5
53.5
50.5
E
P
19 19.5
20
18.5
18
17.5
21.5
21
20.5
-- 4
-- 6
-- 1 8
-- 8
-- 1 0
-- 1 6
-- 1 4 -- 1 2
Figure 10. P1dB Load Pull Output Power Contours (dBm)
REAL ()
Figure 11. P1dB Load Pull Efficiency Contours (%)
Figure 12. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 13. P1dB Load Pull AM/PM Contours ()
REAL ()
E
P
E
P
E
P
AFT09S200W02NR3 AFT09S200W02GNR3
9
RF Device Data
Freescale Semiconductor, Inc.
P3dB -- TYPICAL LOAD PULL CONTOURS — 940 MHz
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 14. P3dB Load Pull Output Power Contours (dBm)
REAL ()
-- 2
1
0
IMAGINARY ()
1.5 22.50.5 3
0.5
-- 0 . 5
-- 1
-- 1 . 5
1
Figure 15. P3dB Load Pull Efficiency Contours (%)
REAL ()
-- 2
1
0
IMAGINARY ()
1.5 22.50.5 3
0.5
-- 0 . 5
-- 1
-- 1 . 5
1
Figure 16. P3dB Load Pull Gain Contours (dB)
REAL ()
-- 2
1
0
IMAGINARY ()
1.5 22.50.5 3
0.5
-- 0 . 5
-- 1
-- 1 . 5
1
Figure 17. P3dB Load Pull AM/PM Contours ()
REAL ()
-- 2
1
0
IMAGINARY ()
1.5 22.50.5 3
0.5
-- 0 . 5
-- 1
-- 1 . 5
1
54.5
51
52.5
53
53.5
54
55
52
E
P
51.5
62
60
58
56
66 64
52
54
56
19.5
19
18.5
18
17.5
17
16.5
16
15.5
-- 6
-- 1 0
-- 2 2 -- 2 0
-- 1 8 -- 1 6
-- 1 4
-- 1 2
-- 8
E
P
E
P
E
P
10
RF Device Data
Freescale Semiconductor, Inc.
AFT09S200W02NR3 AFT09S200W02GNR3
ALTERNATIVE CHARACTERIZATION — 716--728 MHz
Figure 18. AFT09S200W02NR3 Test Circuit Component Layout — 716–728 MHz
*C1, C9, C10, and C27 are mounted vertically.
AFT09S200W02N/--14N
Rev. 0
D49362
C1*
C2
C3
R1
R2
C4
R3
R4
C5
C6
C7
C8
C9*
C10*
C11
C12
C13
C14
C15
C16
C17
C18
C19
C20
C21
C22
C23
C24
C25
C26
C27*
C28
CUT OUT AREA
VGG
VGG
VDD
VDD
Table 7. AFT09S200W02NR3 Test Circuit Component Designations and Values — 716–728 MHz
Part Description Part Number Manufacturer
C1, C4, C6, C12, C13, C17,
C18, C27
68 pF Chip Capacitors ATC100B680JT500XT ATC
C2 1.1 pF Chip Capacitor ATC100B1R1BT500XT ATC
C3, C5, C11, C14, C15, C16,
C19, C20
15 F Chip Capacitors C5750X7S2A156M250KB TDK
C7, C8, C21, C22 5.1 pF Chip Capacitors ATC100B5R1CT500XT ATC
C9, C10 9.1 pF Chip Capacitors ATC100B9R1CT500XT ATC
C23, C24 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC
C25, C26 1.7 pF Chip Capacitors ATC100B1R7BT500XT ATC
C28 220 F, 100 V Electrolytic Capacitor EEV-FK2A221M Panasonic-ECG
R1, R2 1000 , 1/4 W Chip Resistors CRCW12061K00FKEA Vishay
R3, R4 10 , 1/8 W Chip Resistors RK73H2ATTD10R0F KOA Speer
PCB Rogers RO4350B, 0.020,r=3.66 D49362 MTL
AFT09S200W02NR3 AFT09S200W02GNR3
11
RF Device Data
Freescale Semiconductor, Inc.
ALTERNATIVE CHARACTERIZATION—716–728 MHz
IRL, INPUT RETURN LOSS (dB)
710
ACPR
f, FREQUENCY (MHz)
Figure 19. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 56 Watts Avg.
-- 2 0
-- 0
-- 5
-- 1 0
-- 1 5
8
28
26
24
-- 4 2
50
40
30
20
-- 2 2
-- 2 6
-- 3 0
-- 3 4
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
22
20
18
16
14
12
10
725 740 755 770 785 800 815 830
10
-- 3 8
-- 2 5
ACPR (dBc)
PARC
VDD =28Vdc,P
out =56W(Avg.)
IDQ = 1400 mA, Single--Carrier W--CDMA
IRL
PARC (dB)
-- 6
-- 2
-- 3
-- 4
-- 5
-- 7
Gps
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
1
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 20. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 1 0
-- 2 0
19
25
0
60
50
40
30
20
D, DRAIN EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
24
23
10 100 200
10
-- 6 0
ACPR (dBc)
22
21
20
0
-- 3 0
-- 4 0
-- 5 0
Figure 21. Broadband Frequency Response
4
28
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQ = 1400 mA
20
16
12
GAIN (dB)
24
8
550 600 650 700 750 800 850 900 950
-- 2 5
35
25
15
5
-- 5
IRL (dB)
-- 1 5
Gain
IRL
722 MHz 728 MHz
716 MHz
716 MHz
722 MHz
728 MHz
716 MHz
728 MHz
722 MHz
VDD =28Vdc,I
DQ = 1400 mA
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01%
Probability on CCDF
12
RF Device Data
Freescale Semiconductor, Inc.
AFT09S200W02NR3 AFT09S200W02GNR3
PACKAGE DIMENSIONS
AFT09S200W02NR3 AFT09S200W02GNR3
13
RF Device Data
Freescale Semiconductor, Inc.
14
RF Device Data
Freescale Semiconductor, Inc.
AFT09S200W02NR3 AFT09S200W02GNR3
AFT09S200W02NR3 AFT09S200W02GNR3
15
RF Device Data
Freescale Semiconductor, Inc.
16
RF Device Data
Freescale Semiconductor, Inc.
AFT09S200W02NR3 AFT09S200W02GNR3
AFT09S200W02NR3 AFT09S200W02GNR3
17
RF Device Data
Freescale Semiconductor, Inc.
18
RF Device Data
Freescale Semiconductor, Inc.
AFT09S200W02NR3 AFT09S200W02GNR3
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
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REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Apr. 2014 Initial Release of Data Sheet
AFT09S200W02NR3 AFT09S200W02GNR3
19
RF Device Data
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Document Number: AFT09S200W02N
Rev. 0, 4/2014
