RB450F Diode, Schottky barrier, surface mount These mold-type diodes are suitable for Dimensions (Units : mm) high density surface mounting on printed circuit boards. 20202 Features 1.3+04 0.9+0.1 . , 0.65 0.65 0.3 0.6 available in UMD3 (UMD, SC-70, rT SOT-323) package tae | * part marking, 3F | F (e. Applications ale 8 I Min low power rectifying 03401 0.15+0.05 |] = 0 co 19 Absolute maximum ratings (T, = 25C) Parameter Symbol Limits Unit Conditions Peak reverse voltage Vem 25 Vv DC reverse voltage VR 20 V Mean rectifying current lo 0.1 A Peak forward surge current lesm 1 A At 60 Hz for | cycle Junction temperature Tj 125 C Storage temperature Tstg AO ~ +125 C Electrical characteristics (unless otherwise noted, T, = 25C) Parameter Symbol) Min |Typical) Max Unit Conditions Forward voltage Ve 0.38 0.45 Vo {ip = 10 mA Reverse current la 0.08 1 HA |VR=10V Capacitance between _ _ terminals Cy 6.0 pF |V_a=10V,f=1 MHz Diodes ROM 165 RB450F Schottky barrier diodes Electrical characteristic curves <a a 100 ls a 5 5 104% a Ww x ia a ira 2 3 o So oO Vu c B = wi x > 2 w 100 n 2 EE 10n 0.5 602 . 04 05 06 O7 0 20 FORWARD VOLTAGE : Vv: (V} REVERSE VOLTAGE : Va iV: Figure 1 Figure 2 - 100 w & o 50 n a <q Zz = x wd & z 10 Lu = & 5 Ww oo Ww 3 & 2 & a 0 a < 6 REVERSE VOLTAGE : Va | V) Figure 3 166 ROM Diodes