N-CHANNEL ENHANCEMENT
MODE MOSFET
2N6659X
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9688
Issue 2
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
V(BR)DSS Drain – Source
Breakdown Voltage VGS = 0 ID = 10µA 35
VGS(th) Gate Threshold Voltage VDS = VGS ID = 1.0mA 0.8 1.6 2
V
VGS = ±15V ±100
IGSS Gate – Body Leakage
Current VDS = 0V TC =125°C ±500
nA
VDS = 35V VGS = 0 10
VDS = 35V VGS = 0
IDSS Zero Gate Voltage Drain
Current
TC = 125°C 500 µA
ID(on)
2
On-State Drain Current VDS = 15V VGS = 10V 1.5 1.8 A
VGS = 5V ID = 0.3A 1.8 5
RDS(on)
2
Drain – Source On
Resistance VGS = 10V ID = 1.0A 1.3 2 Ω
VGS = 5V ID = 0.3A 0.54 1.5
VDS(on)
2
Drain – Source On Voltage VGS = 10V ID = 1.0A 1.3 2
V
DYNAMIC CHARACTERISTICS
VGS = 10V ID = 1.0A
RDS(on)
Small Signal Drain – Source
On Resistance f = 1.0KHz
1.3 2 Ω
toff Turn-On Time VDD = 25V VGEN = 10V 8 10
RL = 23Ω RG = 25Ω
ton Turn-Off Time ID = 1.0A
9 10
ns
gFS
2
Forward Transconductance VDS = 10V ID = 0.5A 170 350 ms
Ciss Input Capacitance 35 50
Coss Output Capacitance 28 40
Crss Reverse Transfer
Capacitance
VDS = 24V
VGS = 0V
f = 1.0MHz 2 10
pF
2
Pulse Test t
p
≤ 380 µS, δ 2%