AT-42036 Up to 6 GHz MediumPower Silicon Bipolar Transistor Data Sheet Description Features Avago's AT-42036 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT42036 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 up to 1 GHz, makes this device easy to use as a low noise amplifier. * High output power: 21.0 dBm typical P1 dB at 2.0GHz 20.5 dBm typical P1 dB at 4.0GHz The AT-42036 bipolar transistor is fabricated using Avago's 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of this device. 36 micro-X Package * High gain at 1 dB compression: 14.0 dB typical G1 dB at 2.0GHz 9.5 dB typical G1 dB at 4.0GHz * Low noise figure: 1.9 dB typical NFO at 2.0GHz * High gain-bandwidth product: 8.0GHz typical fT * Cost effective ceramic microstrip package AT-42036 Absolute Maximum Ratings [1] Symbol Parameter Units Absolute Maximum Thermal Resistance[2,5]: VEBO Emitter-Base Voltage V 1.5 jc = 175C/W VCBO Collector-Base Voltage V 20 VCEO Collector-Emitter Voltage V 12 IC Collector Current mA 80 PT Power Dissipation [2,3] mW 600 Tj Junction Temperature C 150 TSTG Storage Temperature[4] C -65 to 150 Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. Tcase = 25C. 3. Derate at 5.7 mW/C for Tc > 95C. 4. Storage above +150C may tarnish the leads of this package making it difficult to solder into a circuit. 5. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information. Electrical Specifications TA = 25C Symbol Parameters and Test Conditions [1] Frequency Units Min. Typ. Insertion Power Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz dB 10.0 f = 4.0 GHz 11.0 5.0 P1 dB f = 2.0 GHz dBm f = 4.0 GHz 21.0 20.5 G1 dB 1 dB Compressed Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz dB f = 4.0 GHz 14.0 9.5 NFO Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 2.0 GHz dB f = 4.0 GHz 2.0 3.0 GA Gain @ NFO; VCE = 8 V, IC = 10 mA 13.5 10.0 |S21E|2 Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 35 mA f = 2.0 GHz dB f = 4.0 GHz Max. fT Gain Bandwidth Product: VCE = 8 V, IC = 35 mA GHz 8.0 hFE Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA -- 150 ICBO Collector Cutoff Current; VCB = 8 V A 0.2 IEBO Emitter Cutoff Current; VEB = 1 V A 2.0 CCB Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz Note: 1. For this test, the emitter is grounded. 30 pF 270 0.28 AT-42036 Typical Performance, TA = 25C 24 12 2.0 GHz 20 4.0 GHz P1dB 16 2.0 GHz 12 0 10 20 30 40 4 50 G1dB 8 4.0 GHz 0 10 20 IC (mA) 4V P1dB 12 24 35 21 30 18 GAIN (dB) MSG 20 MAG |S21E|2 10 12 4 9 3 3 0 0 0.5 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 35 mA. NFO 1.0 2.0 G1dB 12 0 10 20 30 40 50 Figure 3. Output Power and 1 dB Compressed Gain vs. Collector Current and Voltage. f = 2.0 GHz. 15 5 10 V 6V 4V IC (mA) GA 6 14 10 50 Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V. 40 15 40 IC (mA) Figure 1. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. 25 30 2 1 0 3.0 4.0 5.0 FREQUENCY (GHz) Figure 5. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10 mA. NFO (dB) 0 GAIN (dB) 6V 16 16 G1 dB (dB) 4.0 GHz 4 10 V 20 2.0 GHz 8 G1 dB (dB) |S21E|2 GAIN (dB) 16 24 P1 dB (dBm) 1.0 GHz P1 dB (dBm) 20 AT-42036 Typical Scattering Parameters, Common Emitter, ZO = 50 , TA=25C, VCE=8 V, IC=10 mA Freq. GHz S11 Mag. S11 Ang. S21 dB S21 Mag. S21 Ang. S12 dB S12 Mag. S12 Ang. S22 Mag. S22 Ang. 0.1 .72 -46 28.3 26.09 152 -37.0 .014 73 .92 -14 0.5 .59 -137 20.9 11.13 102 -31.0 .028 44 .58 -27 1.0 .56 -171 15.4 5.91 80 -28.2 .039 47 .51 -29 1.5 .56 169 12.1 4.03 67 -26.6 .047 52 .50 -33 2.0 .58 155 9.7 3.06 55 -24.2 .062 55 .48 -38 2.5 .59 147 8.0 2.50 48 -22.6 .074 61 .47 -42 3.0 .61 137 6.5 2.10 38 -20.8 .092 65 .46 -51 3.5 .63 128 5.2 1.82 27 -19.6 .105 62 .47 -63 4.0 .63 117 4.0 1.60 17 -18.0 .126 57 .49 -72 4.5 .63 106 3.1 1.43 7 -16.5 .149 53 .51 -80 5.0 .64 93 2.3 1.30 -3 -15.4 .169 48 .52 -87 5.5 .67 79 1.5 1.19 -13 -14.3 .193 41 .51 -94 6.0 .72 70 0.6 1.07 -23 -13.4 .215 35 .46 -105 AT-42036 Typical Scattering Parameters, Common Emitter, ZO = 50 , TA=25C, VCE=8 V, IC=35 mA Freq. GHz S11 Mag. S11 Ang. S21 dB S21 Mag. S21 Ang. S12 dB S12 Mag. S12 Ang. S22 Mag. S22 Ang. 0.1 .50 -88 33.2 45.64 135 -42.0 .008 68 .77 -22 0.5 .52 -164 22.4 13.24 92 -32.8 .023 57 .45 -25 1.0 .53 174 16.6 6.75 76 -28.2 .039 63 .42 -26 1.5 .53 160 13.1 4.55 64 -25.6 .053 66 .41 -30 2.0 .55 148 10.8 3.45 53 -23.2 .069 65 .41 -36 2.5 .57 142 9.0 2.81 47 -21.6 .084 67 .39 -40 3.0 .59 134 7.5 2.37 37 -20.0 .101 64 .38 -49 3.5 .60 125 6.3 2.06 27 -18.4 .120 61 .39 -61 4.0 .60 116 5.2 1.81 17 -17.0 .141 57 .41 -71 4.5 .60 104 4.2 1.62 7 -16.0 .158 50 .43 -78 5.0 .61 92 3.4 1.47 -2 -14.9 .179 45 .44 -84 5.5 .64 79 2.6 1.35 -13 -14.1 .198 37 .43 -91 6.0 .69 70 1.7 1.21 -23 -13.2 .219 30 .38 -102 A model for this device is available in the DEVICE MODELS section. AT-42036 Noise Parameters, VCE=8 V, IC=10 mA Freq. GHz NFO dB opt Mag opt Ang RN /50 0.1 1.0 .04 10 0.13 0.5 1.1 .04 66 0.12 1.0 1.3 .07 150 0.12 2.0 2.0 .20 -178 0.12 4.0 3.0 .51 -110 0.36 Ordering Information No. of Devices 100 1000 Comments Bulk 7" Reel 2.15 (0.085) BASE 1 EMITTER TOP VIEW 1.45 0.25 (0.057 0.010) 1 420 2.11 (0.083) DIA. 4 Device Orientation 420 EMITTER COLLECTOR 420 Part Numbers AT-42036-BLKG AT-42036-TR1G 36 micro-X Package Dimensions 3 0.508 (0.020) 2 2.54 (0.100) 0.15 0.05 (0.006 0.002) 12 mm 420 0.56 (0.022) 4.57 0.25 0.180 0.010 Notes: 1. Dimensions are in millimeters (inches) 2. Tolerances: in .xxx = 0.005 mm .xx = 0.13 1 INDICATES PIN 1 ORIENTATION. Tape Dimensions t D0 P0 P2 10 PITCHES CUMULATIVE TOLERANCE ON TAPE 0.2 MM COVER TAPE E A K C F W B T P1 DESCRIPTION SYMBOL USER FEED DIRECTION D1 SIZE (mm) SIZE (INCHES) CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A B K P1 D1 5.77 0.10 6.10 0.10 1.70 0.10 8.00 0.10 1.50 min. 0.227 0.004 0.240 0.004 0.067 0.004 0.314 0.004 0.059 min. PERFORATION DIAMETER PITCH POSITION D0 P0 E 1.50 + 0.10/-0.05 0.059 + 0.004/-0.002 4.00 0.10 0.157 0.004 1.75 0.10 0.069 0.004 CARRIER TAPE WIDTH THICKNESS W t 12.00 0.20 0.30 0.05 0.472 0.008 0.012 0.002 COVER TAPE WIDTH TAPE THICKNESS C T 9.30 0.10 0.065 0.010 0.366 0.004 0.0026 0.0004 DISTANCE BETWEEN CENTERLINE CAVITY TO PERFORATION (WIDTH DIRECTION) F 5.50 0.05 0.217 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 0.05 0.079 0.002 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright (c) 2007 Avago Technologies Limited. All rights reserved. Obsoletes 5989-2653EN AV02-0300EN - May 29, 2007