SIEMENS NPN Silicon AF Transistors @ For AF driver and output stages @ High collector current @ Low collector-emitter saturation voltage @ Complementary types: BCP 51 ... BCP 53 (PNP) ] VPS05163 Type Marking Ordering Code Pin Configuration | Package) (tape and reel) 1 2 3 4 BCP 54 BCP 54 Q62702-C2117 B | Cc | E | C |SOT-223 BCP 54-10 BCP 54-10 | Q62702-C2119 BCP 54-16 BCP 54-16 | Q62702-C2120 BCP 55 BCP 55 Q62702-C2148 BCP 55-10 BCP 55-10 | Q62702-C2122 BCP 55-16 BCP 55-16 | Q62702-C2123 BCP 56 BCP 56 Q62702-C2149 BCP 56-10 BCP 56-10 | Q62702-C2125 BCP 56-16 BCP 56-16 | Q62702-C2106 1) For detailed information see chapter Package Outlines. Semiconductor Group 540 5.91 SIEMENS BCP 54 ... BCP 56 Maximum Ratings Parameter Symbol Values Unit BCP 54 | BCP 55 | BCP 56 Collector-emitter voltage Veeo 45 60 80 Vv Ree <1 ka Veer 45 60 100 Collector-base voltage Veeo 45 60 100 Emitter-base voltage VeBo 5 Collector current Ic 1 A Peak collector current Tom 1.5 Base current Ie 100 mA Peak base current Tem 200 Total power dissipation, Ts = 124 C) Prot 1.5 Ww Junction temperature Tj 150 Cc Storage temperature range Tstg -65...+ 150 Therma! Resistance Junction - ambient Risa <72 KAW Junction - soldering point Rinus <17 1) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mnv6 cm? Cu. Semiconductor Group 541 SIEMENS BCP 54 .. BCP 56 Electrical Characteristics at 7a = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. |typ. | max. DC characteristics Collector-emitter breakdown voltage Vierceo Vv Ic = 10 mA, In =0 BCP 54 45 - ~ BCP 55 60 - - BCP 56 80 - - Collector-base breakdown voltage?) Vieryceo Io = 100 pA, In = 0 BCP 54 45 - - BCP 55 60 - - BCP 56 100 |- - Emitter-base breakdown voltage Verso | 5 - - Je=10 pA, Ic=0 Collector-base cutoff current Tca0 Vce = 30 V, le = 0 - - 100 nA Ves = 30 V, le = 0, Ta = 150 C - - 20 pA Emitter-base cutoff current Teeo - - 10 pA Vea =5V DC current gain hre - Ic=5mA, Vee=2V 25 - - Ic = 150 mA, Vce=2V BCP 54/BCP 55/BCP 56 40 - 250 BCP 54/BCP 55/BCP 56-10 63 100 160 BCP 54/BCP 55/BCP 56-16 100 160 250 Ie = 500 mA, Vce=2V 25 - - Collector-emitter saturation voltage) Vecsat ~ -~ 0.5 Vv Ic = 500 mA, Is = 50 mA Base-emitier voltage) Vee - ~ 1 Ic = 500 mA, Vce=2 V AC characteristics Transition frequency ff - 100, | - MHz Ic = 50 mA, Vee = 10 V, f= 100 MHz 1 Pulse test conditions: rs 300 ys, D= 2%. Semiconductor Group 542 SIEMENS BCP 54 .. BCP 56 Total power dissipation Pi = f (Ta*; Ts) Transition frequency ft = f (/c) * Package mounted on epoxy Vce = 10V 1.6 34...56 EHPOO266 103 BCP 54...56 EHPOO267 W 1.4 fy MHz tot ua 1.0 0.8 10? 0.6 5 0.4 0.2 0 10! 0 50 100 C 150 10 10! 10? ma 105 ~ 7,: 7, + |, DC current gain hre = f (Ic) Collector cutoff current /cao = f (Ta) Vee=2V Vos = 30 V 10 40 4 SCP 54...56 EHPOOZ69 he 5 nA Topo 103 10? 2 5 10 10! 10! 5 10 10 107 10 1o' 10? 105 ma 104 I, Semiconductor Group 543 SIEMENS Base-emitter saturation voltage = f (Vote) hee = 10 104 GCP $4...56 HP00270 mA 103 10? 10! 10 0 0.2 04 06 O08 V1.2 _- Versat Permissible pulse load Pict max/Piot oc = f (tp) QcP 54...56 HP00272 > TO ooo Pret om il Hi YUE ae UA UTE Prot oc 107 5 10' F 5 Teen th i Billi: oN ct ail Hl ile Lil x nl i AM Pel TES 0 1o- 107 to 105 107? 10 4 Semiconductor Group 544 BCP 54 .. BCP 56 Collector-emitter saturation voltage = f (Veesst) here = 10 194 BP S458 eHPO0271 Ie mA 103 10! 0.2 0.4 0.6 V 0.8 > Vetsat