Original Creation Date: 01/20/00
Last Update Date: 05/08/00
Last Major Revision Date: 01/20/00
MRLM101A-X-RH REV 0B0 MICROCIRCUIT DATA SHEET
SINGLE OPERATIONAL AMPLIFIER - EXTERNALLY COMPENSATED:
ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO
MIL-STD-883, METHOD 1019.5
General Description
The LM101A is a general purpose operational amplifier which features improved performance
over industry standards such as the LM709. Advanced processing techniques make possible
an order of magnitude reduction in input currents, and a redesign of the biasing circuitry
reduces the temperature drift of input current.
This amplifier offers many features which make its application nearly foolproof: overload
protection on the input and output, no latch-up when the common mode range is exceeded,
and freedom from oscillations and compensation with a single 30 pF capacitor. It has
advantages over internally compensated amplifiers in that the frequency compensation can
be tailored to the particular application. For example, in low frequency circuits it can
be overcompensated for increased stability margin. Or the compensation can be optimized
to give more than a factor of ten improvement in high frequency performance for most
applications.
In addition, the device provides better accuracy and lower noise in high impedance
circuitry. The low input currents also make it particularly well suited for long interval
integrators or timers, sample and hold circuits and low frequency waveform generators.
Further, replacing circuits where matched transistor pairs buffer the inputs of
conventional IC op amps, it can give lower offset voltage and a drift at a lower cost.
NS Part Numbers
LM101AHRQML
LM101AHRQMLV
LM101AJRQML
LM101AJRQMLV
LM101AWRQML
LM101AWRQMLV
Industry Part Number
LM101A
Prime Die
LM101A
Controlling Document
SEE FEATURES SECTION
Processing
MIL-STD-883, Method 5004
Quality Conformance Inspection
MIL-STD-883, Method 5005
Subgrp Description Temp ( C)
o
1 Static tests at +25
2 Static tests at +125
3 Static tests at -55
4 Dynamic tests at +25
5 Dynamic tests at +125
6 Dynamic tests at -55
7 Functional tests at +25
8A Functional tests at +125
8B Functional tests at -55
9 Switching tests at +25
10 Switching tests at +125
11 Switching tests at -55
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MICROCIRCUIT DATA SHEET
MRLM101A-X-RH REV 0B0
Features
- Offset voltage 3 mV maximum over temperature
- Input current 100 nA maximum over temperature
- Offset current 20 nA maximum over temperature
- Guaranteed drift characteristics
- Offsets guaranteed over entire common mode and supply voltage ranges
- Slew rate of 10V/us as a summing amplifier
CONTROLLING DOCUMENTS:
LM101AHRQML 5962R9951501QGA
LM101AHRQMLV 5962R9951501VGA
LM101AJRQML 5962R9951501QPA
LM101AJRQMLV 5962R9951501VPA
LM101AWRQML 5962R9951501QHA
LM101AWRQMLV 5962R9951501VHA
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MICROCIRCUIT DATA SHEET
MRLM101A-X-RH REV 0B0
(Absolute Maximum Ratings)
(Note 1)
Supply Voltage +22V
Differential Input Voltage +30V
Input Voltage
(Note 3) +15V
Ouput Short Circuit Duration
(Note 2) Continuous
Operating Ambient Temp. Range -55 C < Ta < +125 C
Maximum Junction Temperature 150 C
Power Dissipation at TA = 25 C
(Note 2) 750mWH-Pkg (Still Air) 1200mWH-Pkg (500LF/Min Air Flow) 1000mWJ8-Pkg (Still Air) 1500mWJ8-Pkg (500LF/Min Air Flow) 500mWW-Pkg (Still Air) 800mWW-Pkg (500LF/Min Air Flow)
Thermal Resistance
ThetaJA 165 C/WH-Pkg (Still Air) 89 C/WH-Pkg (500LF/Min Air Flow) 128 C/WJ8-Pkg (Still Air) 75 C/WJ8-Pkg (500LF/Min Air Flow) 233 C/WW-Pkg (Still Air) 155 C/WW-Pkg (500LF/Min Air Flow)
ThetaJC 39 C/WH-Pkg 26 C/WJ8-Pkg 26 C/WW-Pkg
Storage Temperature Range -65 C to +150 C
Lead Temperature 300 C(Soldering, 10 seconds)
ESD Tolerance
(Note 4) 2000V
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Operating Ratings indicate conditions for which the device is intended to be
functional, but do not guarantee specific performance limits. For guaranteed
specifications and test conditions, see the Electrical Characteristics. The
guaranteed specifications apply only for the test conditions listed. Some performance
characteristics may degrade when the device is not operated under the listed test
conditions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is
dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to
ambient thermal resistance), and TA (ambient temperature). The maximum allowable
power dissipation at any temperature is Pdmax = (Tjmax - TA)/ThetaJA or the number
given in the Absolute Maximum Ratings, whichever is lower.
Note 3: For supply voltages less than +15V, the absolute maximum input voltage is equal to
the supply voltage.
Note 4: Human body model, 100 pF discharged through 1.5k Ohms.
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MRLM101A-X-RH REV 0B0 MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS: See NOTE 3
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: +Vcc = +20V, Vcm = 0V, Rs = 50 ohms
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
Vio Input Offset
Voltage +Vcc = 35V, -Vcc = -5V, Vcm = -15V -2 +2 mV 1
-3 +3 mV 2, 3
+Vcc = 5V, -Vcc = -35V, Vcm = +15V -2 +2 mV 1
-3 +3 mV 2, 3
Vcm = 0V -2 +2 mV 1
-3 +3 mV 2, 3
+Vcc = 5V, -Vcc = -5V, Vcm = 0V -2 +2 mV 1
-3 +3 mV 2, 3
Iio Input Offset
Current +Vcc = 35V, -Vcc = -5V, Vcm = -15V,
Rs = 100K Ohms -10 +10 nA 1, 2
-20 +20 nA 3
+Vcc = 5V, -Vcc = -35V, Vcm = +15V,
Rs = 100K Ohms -10 +10 nA 1, 2
-20 +20 nA 3
Vcm = 0V, Rs = 100K Ohms -10 +10 nA 1, 2
-20 +20 nA 3
+Vcc = 5V, -Vcc = -5V, Vcm = 0V,
Rs = 100K Ohms -10 +10 nA 1, 2
-20 +20 nA 3
Iib+ Input Bias
Current +Vcc = 35V, -Vcc = -5V, Vcm = -15V,
Rs = 100K Ohms -0.1 75 nA 1, 2
-0.1 100 nA 3
+Vcc = 5V, -Vcc = -35V, Vcm = +15V,
Rs = 100K Ohms -0.1 75 nA 1, 2
-0.1 100 nA 3
Vcm = 0V, Rs = 100K Ohms -0.1 75 nA 1, 2
-0.1 100 nA 3
+Vcc = 5V, -Vcc = -5V, Vcm = 0V,
Rs = 100K Ohms -0.1 75 nA 1, 2
-0.1 100 nA 3
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MRLM101A-X-RH REV 0B0 MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS: See NOTE 3(Continued)
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: +Vcc = +20V, Vcm = 0V, Rs = 50 ohms
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
Iib- Input Bias
Current +Vcc = 35V, -Vcc = -5V, Vcm = -15V,
Rs = 100K Ohms -0.1 75 nA 1, 2
-0.1 100 nA 3
+Vcc = 5V, -Vcc = -35V, Vcm = +15V,
Rs = 100K Ohms -0.1 75 nA 1, 2
-0.1 100 nA 3
Vcm = 0V, Rs = 100K Ohms -0.1 75 nA 1, 2
-0.1 100 nA 3
+Vcc = 5V, -Vcc = -5V, Vcm = 0V,
Rs = 100K Ohms -0.1 75 nA 1, 2
-0.1 100 nA 3
+PSRR Power Supply
Rejection Ratio +Vcc = 10V, -Vcc = -20V -50 +50 uV/V 1
-100 +100 uV/V 2, 3
-PSRR Power Supply
Rejection Ratio +Vcc = 20V, -Vcc = -10V -50 +50 uV/V 1
-100 +100 uV/V 2, 3
CMRR Common Mode
Rejection Ratio Vcc = +35V to +5V, Vcm = +15V 80 dB 1, 2,
3
VioADJ(+) Adjustment for
Input Offset
Voltage
4 mV 1, 2,
3
VioADJ(-) Adjustment for
Input Offset
Voltage
-4 mV 1, 2,
3
Ios+ Output Short
Circuit Current +Vcc = 15V, -Vcc = -15V, t < 25mS,
Vcm = -15V -60 mA 1, 2,
3
Ios- Output Short
Circuit Current +Vcc = 15V, -Vcc = -15V, t <25mS,
Vcm = +15V +60 mA 1, 2,
3
Icc Power Supply
Current +Vcc = 15V, -Vcc = -15V 3 mA 1
2.32 mA 2
3.5 mA 3
Delta
Vio/Delta
T
Temperature
Coefficient of
Input Offset
Voltage
+25 C < TA < +125 C 1 -15 +15 uV/ C 2
+25 C < TA < -55 C 1 -18 +18 uV/ C 3
Delta
Iio/Delta
T
Temperature
Coefficient of
Input Offset
Current
+25 C < TA < +125 C 1 -100 +100 pA/ C 2
+25 C < TA < -55 C 1 -200 +200 pA/ C 3
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MRLM101A-X-RH REV 0B0 MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS: See NOTE 3(Continued)
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: +Vcc = +20V, Vcm = 0V, Rs = 50 ohms
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
Avs- Large Signal
(Open Loop)
Voltage Gain
Rl = 2K Ohms, Vout = -15V 2 50 V/mV 4
2 25 V/mV 5, 6
Rl = 10K Ohms, Vout = -15V 2 50 V/mV 4
2 25 V/mV 5, 6
Avs+ Large Signal
(Open Loop)
Voltage Gain
Rl = 2K Ohms, Vout = +15V 2 50 V/mV 4
2 25 V/mV 5, 6
Rl = 10K Ohms, Vout = +15V 2 50 V/mV 4
2 25 V/mV 5, 6
Avs Large Signal
(Open Loop)
Voltage Gain
Vcc = +5V, Rl = 2K Ohms, Vout = +2V 2 10 V/mV 4, 5,
6
Vcc = +5V, Rl = 10K Ohms, Vout = +2V 2 10 V/mV 4, 5,
6
Vop+ Output Voltage
Swing Rl = 10K Ohms, Vcm = -20V +16 V 4, 5,
6
Rl = 2K Ohms, Vcm = -20V +15 V 4, 5,
6
Vop- Output Voltage
Swing Rl = 10K Ohms, Vcm = 20V -16 V 4, 5,
6
Rl = 2K ohms, Vcm = 20V -15 V 4, 5,
6
AC PARAMETERS: See NOTE 3
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC: +Vcc = +20V, Vcm = 0V, Rs = 50 Ohms
Sr+ Slew Rate Av = 1, Vin = -5V to +5V 0.3 V/uS 7, 8A
0.2 V/uS 8B
Sr- Slew Rate Av = 1, Vin = +5V to -5V 0.3 V/uS 7, 8A
0.2 V/uS 8B
TR(tr) Rise Time Av = 1, Vin = 50mV 800 nS 7, 8A,
8B
TR(os) Overshoot Av = 1, Vin = 50mV 25 % 7, 8A,
8B
NI(BB) Noise Broadband BW = 10Hz to 5KHz, Rs = 0 Ohms 15 uVrms 7
NI(PC) Noise Popcorn BW = 10Hz to 5KHz, Rs = 100K Ohms 80 uVpk 7
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MRLM101A-X-RH REV 0B0 MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS: DRIFT VALUES
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: +Vcc = +20V, Vcm = 0V, Rs = 50 Ohms. "Delta calculations performed on JAN S and QMLV devices at group
B, subgroup 5 only".
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
Vio Input Offset
Voltage Vcm = 0V -0.5 0.5 mV 1
Iib+ Input Bias
Current Vcm = 0V, Rs = 100K Ohms -7.5 7.5 nA 1
Iib- Input Bias
Current Vcm = 0V, Rs = 100K Ohms -7.5 7.5 nA 1
Note 1: Calculated parameter.
Note 2: Datalog reading of K = V/mV.
Note 3: Pre and post irradiation limits are identical to those listed under AC and DC
electrical characteristics except as listed in the Post Radiation Limits Table. These
parts may be dose rate sensitive in a space environment and demonstrate enhanced low
dose rate effect. Radiation end point limits for the noted parameters are guaranteed
only for the conditions as specified in MIL-STD-883, Method 1019.5
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MICROCIRCUIT DATA SHEET
MRLM101A-X-RH REV 0B0
Graphics and Diagrams
GRAPHICS# DESCRIPTION
08337HRB2 CERPACK (W), 10 LEAD (B/I CKT)
09384HRA4 METAL CAN, (H) TO-99,8 LEAD,.200 DIA P.C.(B/I CKT)
09413HRB1 CERDIP (J), 8 LEAD (B/I CKT)
H08CRF METAL CAN (H), TO-99, 8LD, .200 DIA P.C. (P/P DWG)
J08ARL CERDIP (J), 8 LEAD (P/P DWG)
P000178A METAL CAN (H), 8 LEAD (PINOUT)
P000180A CERPACK (W), 10 LEAD (PINOUT)
P000226A CERDIP (J), 8 LEAD (PINOUT)
W10ARG CERPACK (W), 10 LEAD (P/P DWG)
See attached graphics following this page.
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N
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MICROCIRCUIT DATA SHEET
MRLM101A-X-RH REV 0B0
Revision History
Rev ECN # Rel Date Originator Changes
0A0 M0003656 05/08/00 Rose Malone Initial MDS Release: MRLM101A-X-RH, Rev. 0A0
0B0 M0003678 05/08/00 Rose Malone Update MDS: MRLM101A-X-RH, Rev. 0A0 to MRLM101A-X-RH,
Rev. 0B0. Typo error in Features Section Controlling
Documents: SMD Suffix VPA should be QPA for
LM101AJRQML.
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