BD533/535/537 MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE Complement to BD534, BD536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS NPN EPITAXIAL SILICON TRANSISTOR Characteristic Symbol Rating Unit Collector Emitter Voltage :BD533 Vesa 45 Vv : BD535 60 Vv : BD537 80 Vv Collector Emitter Voltage :BD533 Voes 45 Vv : BD535 60 Vv : BD537 80 Vv Collector Emitter Voltage :BD533 Veeq 45 : BD535 60 Vv : BD537 80 Vv Emitter Base Voltage Vega 5 Vv Collector Current (DC) le 8 A Emitter Current le 8 A Base Current lb 1 A Collector Dissipation (Tc=25C) Po 50 Ww Junction Temperature Ty 150 C Storage Temperature Tsta $5~150 | c TO-220 1.Base 2.Collector 3.Emitter ELECTRICAL CHARACTERISTICS (7, =25c) Characteristic Symbol Test Conditions Min | Typ | Max | Unit Collector Cutoff Current : BD533 lego Voce = 45V, leE=0 100 HA :BD535 Vea = 60V, IE=0 too | WA : BD537 Vor = 80V, I= 0 1oo | ya Collector Cutoff Current : BD533 lees Voe=45V, Vee=0 100 LA : BD535 Vee = GOV, Vae=0 109 | ua :BD537 Vee = B0V, Vee= 0 100 HA Emitter Cutoff Current lesa Veg=5V, Ie =O 1 mA *DC Current Gain : BD533/535 Nee Vee = 5V, Ic = 10mMA 20 : BD537 15 : ALL DEVICE Vee = 2V, Ip = 500mA 40 : BD533/535 Vee= 2V, Ie = 2A 25 : BB537 15 hee Groups J : ALL DEVICE Hee Voe= 2V, Ie= 2A 30 75 Vee= 2, Ilp=3A 15 K > ALL DEVICE Vee = 2V, Ip = 2A 40 100 Vee=2V, b=3A 20 *Gollector Emitter Saturation Voltage Vce(sat) lo = 2A, Ip =0.2A 0.8 v In = 6A, Ip =0.6A 0.8 Vv *Base Emitter On Voltage Vee(on) Voe=2V,Ic=2A 15 Vv Transition Frequency tr Vee=1V, Ile =500mA 3 12 MHz * Pulse Test: PW =300us, duty Cycle =1.5% Pulsed Rev. B es FAIRCHILD ee SEMICONDLIGTOR mu 81999 Fairchild Semiconductor Corporation BD533/535/537 DC CURRENT GAIN 1000 100 bre. DC CURRENT GAIN 10 O01 0.02 008 G1 D2 os 1 2 iA), COLLECTOR CURRENT BASE EMITTER SATURATION VOLTAGE Voetsati(V), SATURATION VOLTAGE 01 02 O81 2 5 Ila), COLLECTOR CURRENT POWER DERATING le = 10.15 10 20 Voelsatv), SATURATION VOLTAGE Icfh}, COLLECTOR CURRENT NPN EPITAXIAL SILICON TRANSISTOR COLLECTOR EMITTER SATURATION VOLTAGE 1 I= 101g O58 a2 G4 0.05 0.02 ont Of 0.2 05 1 2 5 10 If), COLLECTOR CURRENT SAFE OPERATING AREA 10 5 2 1 05 BDS34 O2 BDS37 a4 1 2 5 10 20 50 1o0 200 50 = 1000 Vce(). COLLECTOR EMITTER VOLTAGE =z o a a c w = z = o 2% 60 75 100 125 10 176) 20 Tof*C), CASE TEMPERATURE ee FAIRGHILD ee SEMICONDLIGTOR mu TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ISOPLANAR CoolFET MICROWIRE CROSSVOLT POP E?CMOS PowerTrench FACT QS FACT Quiet Series Quiet Series FAST SuperSOT-3 FASTr SuperSOT-6 GTo SuperSOT-8 HiSeC TinyLogic DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE GHANGES WITHOUT FURTHER NOTIGE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNGTION OR DESIGN. FAIRGHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or This datasheet contains the design specifications for In Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.