SII400S12 SPT IGBT Modules Dimensions in mm (1mm = 0.0394") TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Visol Inverse Diode IF=-IC TC= 25(80)oC TC= 25(80)oC, tP =1ms IFRM IFSM tP =10ms; sin.;Tj=150 oC Values Units 1200 V 565(400) 1130(800) _ +20 _ 40...+150(125) A A o V C 4000 V 390(260) 1130(800) A A 2900 A SII400S12 SPT IGBT Modules TC = 25oC, unless otherwise specified Characteristics Symbol IGBT VGE(th) ICES VCE(TO) rCE VCE(sat) Cies Coes Cres LCE RCC'+EE' Conditions min. 4.8 VGE = VCE, IC = 12mA VGE = 0; VCE = VCES; Tj = 25oC Tj = 25(125)oC VGE = 15V, Tj = 25(125)oC IC =300A; VGE = 15V; chip level under following conditions VGE = 0, VCE = 25V, f = 1MHz typ. max. 5.5 6.45 0.2 0.6 1(0.9) 1.15(1.05) 3(4) 4(5) 1.9(2.1) 2.35(2.55) 26 20 res., terminal-chip TC = 25(125) C under following conditions: VCC = 600V, IC = 300A RGon = RGoff =4.7 , Tj = 125oC VGE = 15V td(on) tr td(off) tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 300A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 25(125)oC rT Tj = 25(125)oC IRRM IF = 300A; Tj = 125oC Qrr di/dt = 2400A/us Err VGE = V Thermal Characteristics Rth(j-c) per IGBT Rth(j-c)D per Inverse Diode Rth(c-s) per module Mechanical Data Ms to heatsink M6 Mt to terminals M6 w 0.35(0.5) nH m 110 60 800 60 32(31) ns ns ns ns mJ 2(1.8) 1.1 3 176 40 2.5 1.2 4.3 V V m A uC mJ 0.055 0.125 K/W K/W 0.038 K/W 5 5 325 Nm Nm g 16 3 2.5 V mA V m V nF 3 3 o Units