SII400S12
SPT IGBT Modules
Absolute Maximum Ratings
Symbol Conditions Values Units
IGBT
V
CES
V
I
C
T
C
= 25(80)
oC
A
I
CRM
A
V
GES
T
Vj,
(T
stg
)
V
isol
Inverse Diode
T
C
= 25
oC
, unless otherwise specified
T
C
= 25(80)
oC, tP =1ms
TOPERATION <
_Tstg
AC, 1min
IF=-IC
IFRM
IFSM
T
C
= 25(80)
oC
T
C
= 25(80)
oC, tP =1ms
tP =10ms; sin.;Tj=150oC
1200
565(400)
1130(800)
+20
_
40...+150(125)
4000
390(260)
1130(800)
2900
_
V
oC
V
A
A
A
Dimensions in mm (1mm = 0.0394")
SII400S12
SPT IGBT Modules
Characteristics
Symbol Conditions min. typ. max. Units
IGBT
V
GE(th)
V
GE
= V
CE
, I
C
= 12mA 4.8 5.5 6.45 V
I
CES
V
GE
= 0; V
CE
= V
CES
; T
j
= 25
oC
0.2 0.6 mA
V
CE(TO)
T
j
= 25(125)
oC
1(0.9) 1.15(1.05) V
r
CE
V
GE
= 15V, T
j
= 25(125)
oC
3(4) 4(5) m
V
CE(sat)
I
C
=300A; V
GE
= 15V; chip level 1.9(2.1) 2.35(2.55) V
C
ies
under following conditions
C
oes
V
GE
= 0, V
CE
= 25V, f = 1MHz 3
C
res
3
L
CE
20 nH
R
CC'+EE'
res., terminal-chip T
C
= 25(125)
oC
0.35(0.5) m
under following conditions:
t
d(on)
V
CC
= 600V, I
C
= 300A 110 ns
t
r
R
Gon
= R
Goff
=4.7 , T
j
= 125
oC
60 ns
t
d(off)
V
GE
= ± 15V 800 ns
t
f
60 ns
E
on
(E
off
) 32(31) mJ
Inverse Diode under following conditions:
V
F
= V
EC
I
F
= 300A; V
GE
= 0V; T
j
= 25(125)
oC
2(1.8) 2.5 V
V
(TO)
T
j
= 25(125)
oC
1.2 V
r
T
T
j
= 25(125)
oC
3 4.3 m
I
RRM
I
F
= 300A; T
j
= 125
oC
176 A
Q
rr
di/dt = 2400A/us uC
E
rr
V
GE
= V mJ
Thermal Characteristics
R
th(j-c)
per IGBT 0.055 K/W
R
th(j-c)D
per Inverse Diode 0.125 K/W
R
th(c-s)
per module 0.038 K/W
Mechanical Data
M
s
to heatsink M6 3 5 Nm
M
t
to terminals M6 2.5 5 Nm
w 325 g
T
C
= 25
oC
, unless otherwise specified
nF
1.1
40
26
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