MM3ZxxxT1G Series, SZMM3ZxxxT1G Series Zener Voltage Regulators 200 mW SOD-323 Surface Mount This series of Zener diodes is packaged in a SOD-323 surface mount package that has a power dissipation of 200 mW. They are designed to provide voltage regulation protection and are especially attractive in situations where space is at a premium. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. http://onsemi.com SOD-323 CASE 477 STYLE 1 Specification Features: 0.067" x 0.049" (1.7 mm x 1.25 mm) Low Body Height: 0.035" (0.9 mm) Package Weight: 4.507 mg/Unit ESD Rating of Class 3 (> 16 kV) per Human Body Model AEC-Q101 Qualified and PPAP Capable - SZMM3ZxxxT1G SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These are Pb-Free Devices* 1 Cathode 2 Anode MARKING DIAGRAM xx M Standard Zener Breakdown Voltage Range - 2.4 V to 75 V Steady State Power Rating of 200 mW Small Body Outline Dimensions: G G Mechanical Characteristics: CASE: Void-free, Transfer-Molded Plastic FINISH: All External Surfaces are Corrosion Resistant MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260C for 10 Seconds LEADS: Plated with Pb-Sn or Sn Only (Pb-Free) POLARITY: Cathode Indicated by Polarity Band FLAMMABILITY RATING: UL 94 V-0 MOUNTING POSITION: Any Rating Symbol PD (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device MAXIMUM RATINGS Total Device Dissipation FR-5 Board, (Note 1) @ TA = 25C Derate above 25C xx = Specific Device Code M = Date Code* G = Pb-Free Package Max Unit 200 1.5 mW mW/C Thermal Resistance, Junction-to-Ambient RqJA 635 C/W Junction and Storage Temperature Range TJ, Tstg -65 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 Minimum Pad Package Shipping MM3ZxxxT1G SOD-323 (Pb-Free) 3,000 / Tape & Reel SZMM3ZxxxT1G SOD-323 (Pb-Free) 3,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 January, 2012 - Rev. 9 1 Publication Order Number: MM3Z2V4T1/D MM3ZxxxT1G Series, SZMM3ZxxxT1G Series ELECTRICAL CHARACTERISTICS Symbol I Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF QVZ C IF VZ VR V IR VF IZT Maximum Temperature Coefficient of VZ Zener Voltage Regulator Max. Capacitance @VR = 0 and f = 1 MHz ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types) Zener Voltage (Note 2) VZ (Volts) @ IZT Zener Impedance ZZT @ IZT Leakage Current ZZK @ IZK IR @ VR C @ VR = 0 f = 1 MHz QVZ (mV/k) @ IZT Device Marking Min Nom Max mA W W mA mA Volts Min Max pF MM3Z2V4T1G MM3Z2V7T1G MM3Z3V0T1G MM3Z3V3T1G MM3Z3V6T1G 00 01 02 05 06 2.2 2.5 2.8 3.1 3.4 2.4 2.7 3.0 3.3 3.6 2.6 2.9 3.2 3.5 3.8 5 5 5 5 5 100 100 100 95 90 1000 1000 1000 1000 1000 0.5 0.5 0.5 0.5 0.5 50 20 10 5 5 1.0 1.0 1.0 1.0 1.0 -3.5 -3.5 -3.5 -3.5 -3.5 0 0 0 0 0 450 450 450 450 450 MM3Z3V9T1G MM3Z4V3T1G MM3Z4V7T1G MM3Z5V1T1G MM3Z5V6T1G 07 08 09 0A 0C 3.7 4.0 4.4 4.8 5.2 3.9 4.3 4.7 5.1 5.6 4.1 4.6 5.0 5.4 6.0 5 5 5 5 5 90 90 80 60 40 1000 1000 800 500 200 0.5 0.5 0.5 0.5 0.5 3 3 3 2 1 1.0 1.0 2.0 2.0 2.0 -3.5 -3.5 -3.5 -2.7 -2.0 -2.5 0 0.2 1.2 2.5 450 450 260 225 200 MM3Z6V2T1G MM3Z6V8T1G MM3Z7V5T1G MM3Z8V2T1G MM3Z9V1T1G 0E 0F 0G 0H 0K 5.8 6.4 7.0 7.7 8.5 6.2 6.8 7.5 8.2 9.1 6.6 7.2 7.9 8.7 9.6 5 5 5 5 5 10 15 15 15 15 100 160 160 160 160 0.5 0.5 0.5 0.5 0.5 3 2 1 0.7 0.2 4.0 4.0 5.0 5.0 7.0 0.4 1.2 2.5 3.2 3.8 3.7 4.5 5.3 6.2 7.0 185 155 140 135 130 MM3Z10VT1G MM3Z11VT1G MM3Z12VT1G MM3Z13VT1G MM3Z15VT1G 0L 0M 0N 0P 0T 9.4 10.4 11.4 12.4 14.3 10 11 12 13.25 15 10.6 11.6 12.7 14.1 15.8 5 5 5 5 5 20 20 25 30 30 160 160 80 80 80 0.5 0.5 0.5 0.5 0.5 0.1 0.1 0.1 0.1 0.05 8.0 8.0 8.0 8.0 10.5 4.5 5.4 6.0 7.0 9.2 8.0 9.0 10 11 13 130 130 130 120 110 MM3Z16VT1G MM3Z18VT1G MM3Z20VT1G MM3Z22VT1G MM3Z24VT1G 0U 0W 0Z 10 11 15.3 16.8 18.8 20.8 22.8 16.2 18 20 22 24.2 17.1 19.1 21.2 23.3 25.6 5 5 5 5 5 40 45 55 55 70 80 80 100 100 120 0.5 0.5 0.5 0.5 0.5 0.05 0.05 0.05 0.05 0.05 11.2 12.6 14.0 15.4 16.8 10.4 12.4 14.4 16.4 18.4 14 16 18 20 22 105 100 85 85 80 MM3Z27VT1G MM3Z30VT1G MM3Z33VT1G MM3Z36VT1G MM3Z39VT1G 12 14 18 19 20 25.1 28 31 34 37 27 30 33 36 39 28.9 32 35 38 41 2 2 2 2 2 80 80 80 90 130 300 300 300 500 500 0.5 0.5 0.5 0.5 0.5 0.05 0.05 0.05 0.05 0.05 18.9 21.0 23.2 25.2 27.3 21.4 24.4 27.4 30.4 33.4 25.3 29.4 33.4 37.4 41.2 70 70 70 70 45 MM3Z43VT1G MM3Z47VT1G MM3Z51VT1G MM3Z56VT1G 21 1A 1C 1D 40 44 48 52 43 47 51 56 46 50 54 60 2 2 2 2 150 170 180 200 500 500 500 500 0.5 0.5 0.5 0.5 0.05 0.05 0.05 0.05 30.1 32.9 35.7 39.2 37.6 42.0 46.6 52.2 46.6 51.8 57.2 63.8 40 40 40 40 MM3Z68VT1G MM3Z75VT1G 1F 1G 64 70 68 75 72 79 2 2 240 255 500 500 0.5 0.5 0.05 0.05 47.6 52.5 65.6 73.4 79.8 88.6 35 35 Device* *Include SZ-prefix devices where applicable. 2. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25C. http://onsemi.com 2 MM3ZxxxT1G Series, SZMM3ZxxxT1G Series TYPICAL CHARACTERISTICS 1000 TJ = 25C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) Z ZT , DYNAMIC IMPEDANCE ( ) 1000 100 100 IZ = 1 mA 5 mA 10 1.0 3.0 10 VZ, NOMINAL ZENER VOLTAGE 75C 1.0 80 150C 10 0.4 Figure 1. Effect of Zener Voltage on Zener Impedance IR, LEAKAGE CURRENT ( A) C, CAPACITANCE (pF) 0 V BIAS 100 1 V BIAS BIAS AT 50% OF VZ NOM 10 1.1 1.2 4.0 10 VZ, NOMINAL ZENER VOLTAGE (V) 70 100 10 1.0 +150C 0.1 0.01 0.001 + 25C 0.0001 -55C 0.00001 0 Figure 3. Typical Capacitance 100 10 1.0 0.1 2.0 4.0 6.0 8.0 VZ, ZENER VOLTAGE (V) 20 30 40 50 60 VZ, NOMINAL ZENER VOLTAGE (V) 100 TA = 25C 0 10 70 Figure 4. Typical Leakage Current IZ , ZENER CURRENT (mA) I Z , ZENER CURRENT (mA) 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) 1000 TA = 25C 0.01 0C Figure 2. Typical Forward Voltage 1000 1.0 0.5 25C 10 12 TA = 25C 10 1 0.1 0.01 10 30 50 70 VZ, ZENER VOLTAGE (V) 90 Figure 6. Zener Voltage versus Zener Current (12 V to 75 V) Figure 5. Zener Voltage versus Zener Current (VZ Up to 12 V) http://onsemi.com 3 MM3ZxxxT1G Series, SZMM3ZxxxT1G Series TYPICAL CHARACTERISTICS 100 POWER DISSIPATION (%) 80 60 40 20 0 0 25 50 75 100 TEMPERATURE (C) 125 Figure 7. Steady State Power Derating http://onsemi.com 4 150 MM3ZxxxT1G Series, SZMM3ZxxxT1G Series PACKAGE DIMENSIONS SOD-323 CASE 477-02 ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L A1 NOTE 5 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 STYLE 1: PIN 1. CATHODE 2. ANODE SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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