Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 9
1Publication Order Number:
MM3Z2V4T1/D
MM3ZxxxT1G Series,
SZMM3ZxxxT1G Series
Zener Voltage Regulators
200 mW SOD−323 Surface Mount
This series of Zener diodes is packaged in a SOD−323 surface
mount package that has a power dissipation of 200 mW. They are
designed to provide voltage regulation protection and are especially
attractive in situations where space is at a premium. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Specification Features:
Standard Zener Breakdown Voltage Range − 2.4 V to 75 V
Steady State Power Rating of 200 mW
Small Body Outline Dimensions:
0.067” x 0.049” (1.7 mm x 1.25 mm)
Low Body Height: 0.035” (0.9 mm)
Package Weight: 4.507 mg/Unit
ESD Rating of Class 3 (> 16 kV) per Human Body Model
AEC−Q101 Qualified and PPAP Capable − SZMM3ZxxxT1G
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These are Pb−Free Devices*
Mechanical Characteristics:
CASE: Void-free, Transfer-Molded Plastic
FINISH: All External Surfaces are Corrosion Resistant
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260C for 10 Seconds
LEADS: Plated with Pb−Sn or Sn Only (Pb−Free)
POLARITY: Cathode Indicated by Polarity Band
FLAMMABILITY RATING: UL 94 V−0
MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) @ TA = 25C
Derate above 25C
PD200
1.5
mW
mW/C
Thermal Resistance, Junction−to−Ambient RqJA 635 C/W
Junction and Storage Temperature Range TJ, Tstg −65 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 Minimum Pad
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
1
Cathode
2
Anode
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
DEVICE MARKING INFORMATION
Device Package Shipping†
ORDERING INFORMATION
MARKING DIAGRAM
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MM3ZxxxT1G SOD−323
(Pb−Free)
3,000 /
Tape & Reel
http://onsemi.com
SOD−323
CASE 477
STYLE 1
(Note: Microdot may be in either location)
xx G
G
M
*Date Code orientation may vary depending
upon manufacturing location.
xx = Specific Device Code
M = Date Code*
G= Pb−Free Package
SZMM3ZxxxT1G SOD−323
(Pb−Free)
3,000 /
Tape & Reel
Zener Voltage Regulator
IF
V
I
IR
IZT
VR
VZ
VF
MM3ZxxxT1G Series, SZMM3ZxxxT1G Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
Symbol Parameter
VZReverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT
IZK Reverse Current
ZZK Maximum Zener Impedance @ IZK
IRReverse Leakage Current @ VR
VRReverse Voltage
IFForward Current
VFForward Voltage @ IF
QVZMaximum Temperature Coefficient of VZ
CMax. Capacitance @VR = 0 and f = 1 MHz
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types)
Device*
Device
Marking
Zener Voltage (Note 2) Zener Impedance Leakage Current QVZ
(mV/k)
@ IZT
C
@ VR = 0
f = 1 MHz
VZ (Volts) @ IZT
ZZT
@ IZT ZZK @ IZK IR @ VR
Min Nom Max mA W W mA mAVolts Min Max pF
MM3Z2V4T1G 00 2.2 2.4 2.6 5 100 1000 0.5 50 1.0 −3.5 0 450
MM3Z2V7T1G 01 2.5 2.7 2.9 5 100 1000 0.5 20 1.0 −3.5 0 450
MM3Z3V0T1G 02 2.8 3.0 3.2 5 100 1000 0.5 10 1.0 −3.5 0 450
MM3Z3V3T1G 05 3.1 3.3 3.5 5 95 1000 0.5 5 1.0 −3.5 0 450
MM3Z3V6T1G 06 3.4 3.6 3.8 5 90 1000 0.5 5 1.0 −3.5 0 450
MM3Z3V9T1G 07 3.7 3.9 4.1 5 90 1000 0.5 3 1.0 −3.5 −2.5 450
MM3Z4V3T1G 08 4.0 4.3 4.6 5 90 1000 0.5 3 1.0 −3.5 0 450
MM3Z4V7T1G 09 4.4 4.7 5.0 5 80 800 0.5 3 2.0 −3.5 0.2 260
MM3Z5V1T1G 0A 4.8 5.1 5.4 5 60 500 0.5 2 2.0 −2.7 1.2 225
MM3Z5V6T1G 0C 5.2 5.6 6.0 5 40 200 0.5 1 2.0 −2.0 2.5 200
MM3Z6V2T1G 0E 5.8 6.2 6.6 5 10 100 0.5 3 4.0 0.4 3.7 185
MM3Z6V8T1G 0F 6.4 6.8 7.2 5 15 160 0.5 2 4.0 1.2 4.5 155
MM3Z7V5T1G 0G 7.0 7.5 7.9 5 15 160 0.5 1 5.0 2.5 5.3 140
MM3Z8V2T1G 0H 7.7 8.2 8.7 5 15 160 0.5 0.7 5.0 3.2 6.2 135
MM3Z9V1T1G 0K 8.5 9.1 9.6 5 15 160 0.5 0.2 7.0 3.8 7.0 130
MM3Z10VT1G 0L 9.4 10 10.6 5 20 160 0.5 0.1 8.0 4.5 8.0 130
MM3Z11VT1G 0M 10.4 11 11.6 5 20 160 0.5 0.1 8.0 5.4 9.0 130
MM3Z12VT1G 0N 11.4 12 12.7 5 25 80 0.5 0.1 8.0 6.0 10 130
MM3Z13VT1G 0P 12.4 13.25 14.1 5 30 80 0.5 0.1 8.0 7.0 11 120
MM3Z15VT1G 0T 14.3 15 15.8 5 30 80 0.5 0.05 10.5 9.2 13 110
MM3Z16VT1G 0U 15.3 16.2 17.1 5 40 80 0.5 0.05 11.2 10.4 14 105
MM3Z18VT1G 0W 16.8 18 19.1 5 45 80 0.5 0.05 12.6 12.4 16 100
MM3Z20VT1G 0Z 18.8 20 21.2 5 55 100 0.5 0.05 14.0 14.4 18 85
MM3Z22VT1G 10 20.8 22 23.3 5 55 100 0.5 0.05 15.4 16.4 20 85
MM3Z24VT1G 11 22.8 24.2 25.6 5 70 120 0.5 0.05 16.8 18.4 22 80
MM3Z27VT1G 12 25.1 27 28.9 2 80 300 0.5 0.05 18.9 21.4 25.3 70
MM3Z30VT1G 14 28 30 32 2 80 300 0.5 0.05 21.0 24.4 29.4 70
MM3Z33VT1G 18 31 33 35 2 80 300 0.5 0.05 23.2 27.4 33.4 70
MM3Z36VT1G 19 34 36 38 2 90 500 0.5 0.05 25.2 30.4 37.4 70
MM3Z39VT1G 20 37 39 41 2 130 500 0.5 0.05 27.3 33.4 41.2 45
MM3Z43VT1G 21 40 43 46 2 150 500 0.5 0.05 30.1 37.6 46.6 40
MM3Z47VT1G 1A 44 47 50 2 170 500 0.5 0.05 32.9 42.0 51.8 40
MM3Z51VT1G 1C 48 51 54 2 180 500 0.5 0.05 35.7 46.6 57.2 40
MM3Z56VT1G 1D 52 56 60 2 200 500 0.5 0.05 39.2 52.2 63.8 40
MM3Z68VT1G 1F 64 68 72 2 240 500 0.5 0.05 47.6 65.6 79.8 35
MM3Z75VT1G 1G 70 75 79 2 255 500 0.5 0.05 52.5 73.4 88.6 35
*Include SZ-prefix devices where applicable.
2. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25C.
MM3ZxxxT1G Series, SZMM3ZxxxT1G Series
http://onsemi.com
3
TYPICAL CHARACTERISTICS
80
VZ, NOMINAL ZENER VOLTAGE
Figure 1. Effect of Zener Voltage on Zener Impedance
103.0
ZZT, DYNAMIC IMPEDANCE ( )
1000
100
10
1.0
TJ = 25C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IZ = 1 mA
5 mA
VF
, FORWARD VOLTAGE (V)
Figure 2. Typical Forward Voltage
1.21.11.00.90.80.70.60.50.4
IF, FORWARD CURRENT (mA)
1000
100
10
1.0
150C
75C 25C 0C
C, CAPACITANCE (pF)
70
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 3. Typical Capacitance
1000
100
10
1.0 104.0
BIAS AT
50% OF VZ NOM
TA = 25C
0 V BIAS 1 V BIAS
IR, LEAKAGE CURRENT ( A)
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 4. Typical Leakage Current
1000
100
10
1.0
0.1
0.01
0.001
0.0001
0.00001
706050403020100
+150C
+25C
−55C
12
VZ, ZENER VOLTAGE (V)
100
10
1.0
0.1
0.01 108.06.04.02.00
TA = 25C
IZ, ZENER CURRENT (mA)
VZ, ZENER VOLTAGE (V)
Figure 5. Zener Voltage versus Zener Current
(VZ Up to 12 V)
Figure 6. Zener Voltage versus Zener Current
(12 V to 75 V)
100
10
1
0.1
0.0110 30 50 70 90
TA = 25C
IZ, ZENER CURRENT (mA)
MM3ZxxxT1G Series, SZMM3ZxxxT1G Series
http://onsemi.com
4
TYPICAL CHARACTERISTICS
TEMPERATURE (C)
250
100
40
20
0
POWER DISSIPATION (%)
50 75 100 125 150
80
60
Figure 7. Steady State Power Derating
MM3ZxxxT1G Series, SZMM3ZxxxT1G Series
http://onsemi.com
5
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE H
1.60
0.063
0.63
0.025
ǒmm
inchesǓ
SCALE 10:1
0.83
0.033
2.85
0.112
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. CATHODE
2. ANODE
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF
RADIUS.
NOTE 3
D
12bE
A3
A1
A
CNOTE 5
L
HE
DIM MIN NOM MAX
MILLIMETERS
A0.80 0.90 1.00
A1 0.00 0.05 0.10
A3 0.15 REF
b0.25 0.32 0.4
C0.089 0.12 0.177
D1.60 1.70 1.80
E1.15 1.25 1.35
0.08
2.30 2.50 2.70
L
0.031 0.035 0.040
0.000 0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN NOM MAX
INCHES
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