PTZ series Diode, Zener, 1W, surface mount These Zener diodes are suitable for use in automated surface-mount manufacturing environments. They can be supplied in voltages between 2.0 and 43 V. Features available in PMDS (PSM) package * part marking shown in table Applications voltage regulator * surge voltage suppression Dimensions (Units : mm) 1.540.2 CATHODE MARK oN 2.0 aren | 4.2 Absolute maximum ratings (T, = 25C) Parameter Symbol Limits Unit Conditions ae Consider the density of the other power Power dissipation Py 1000 mw components also. Junction temperature T, 150 C Storage temperature Tstg 40 ~ +150 C 200 ROHM Diodes Zener diodes PTZ series Electrical characteristics (unless otherwise noted, T, = 25C) (Sheet 1 of 2) se Operating . are Zener voltage subdivision resistance? Reverse current art no. arkin 3 Class? Vz (V) | 220), iz |RUAT Vp Min Max | (MA) | Max | (MA) | Max (V) PTZ 2.0 2.0A A 1880 | 2.120 40 25 40 200 0.5 , 2.0B B 2.000 2.240 2.2A A 2.080 2.330 PTZ 2.2 40 20 40 200 0.7 2.2B B 2.200 2.450 2.4A A 2.280 2.560 PTZ 2.4 40 15 40 200 1.0 2.4B B 2.400 2.700 2.7A A 2.500 2.900 PTZ 2.7 40 15 40 200 1.0 2.7B B 2.700 3.100 PTZ 3.0 3.0A A 7.800 | 3.200 40 15 40 100 1.0 3.0B B 3.000 3.400 . 3.3A A 3.100 3.500 PTZ 3.3 40 15 40 80 1.0 3.3B B 3.300 3.700 3.6A A 3.400 3.800 PTZ 3.6 40 15 40 60 1.0 3.6B B 3.600 4.000 3.9A A 3.700 4.100 PTZ 3.9 40 15 40 40 1.0 3.9B B 3,900 4.400 4.3A A 4.000 4,500 PTZ 4.3 40 15 40 20 1.0 4.3B B 4,300 4.800 4.7A A 4.400 4.900 PTZ 4.7 40 10 40 20 1.0 4.7B B 4.700 5.200 5.1A A 4.800 5.400 PTZ 5.1 40 8 40 20 1.5 5.1B B 5.100 5.700 5.6A A 5.300 6.000 PTZ 5.6 40 8 40 20 1.5 5.6B B 5.600 6.300 6.2A A 5.800 6,600 PTZ 6.2 40 6 40 20 3.0 6.2B B 6.200 7.000 BA A A 7.200 PTZ 6.8 6.8 6.400 40 6 40 20 3.5 6.8B B 6.800 7.700 7.5A A 7.000 7.900 PTZ 7.5 40 4 40 20 4.0 7.5B B 7.500 8.400 . A . . PTZ 8.2 8.2A 7.700 8.700 40 4 40 20 5.0 8.2B B 8.200 9.300 9. . . PTZ 9.1 1A A 8.500 9.600 40 6 40 20 6.0 9.1B B 9.100 | 10.200 Diodes RBM 201 PTZ series Zener diodes Electrical characteristics (unless otherwise noted, T, = 25C) (Sheet 2 of 2) Zener voltage subdivision crerating, Reverse current Partno. | Marking ase? Vz (V) | 22) i |WAYT Va Min Max | (mA) | Max | (MA) | Max (V) 10A A 9.400 10.600 PTZ 10 708 5 10.000 111.200 40 6 40 10 7.0 11A A 10.400 | 11.600 PTZ 11 TiB B i000 | 12,300 20 8 20 10 8.0 12 A 11.4 12. PTZ 12 ea B a0 aaa 20 8 20 10 9.0 pzta | OR P| a PaO |) Tay | ao | wo | 100 1 13. . PTZ 15 a a aaa on 20 10 20 10 11.0 1 15. . PTZ 16 a te 2 | 2 | 2 | 0 | 120 18A A 16.800 | 19.100 PTZ 18 185 5 18000 130.300 20 12 20 10 13.0 20A A 18. 21.2 PTZ 20 0B 5 aa ee 20 14 20 10 15.0 pz | A | A foo fm | | iy | a | 1 | a0 preee | RTA [am 56 G | ag Tao | wo | 190 27A A 25.100 | 28.900 PTZ 27 3768 5 57,000 130.800 10 16 10 10 21.0 30A A 28. 2. PTZ 30 0B B mea aaa 10 18 10 10 23.0 33A A 31, . PTZ 33 358 B aoe oo 10 18 10 10 25.0 | press | SR [A fem 58H TG Tag Tao | wo | zo PTZ 39 39A A 37.000 | 41.000 10 50 10 10 30.0 PTZ 43 438A A 40.000 | 46.000 10 50 10 5 33.0 '. The Zener voltage subdivision (V,) is measured 40 ms after the diode is powered up. 2. The operating resistance (Z, and Z,,) is measured by superimposing a minute alternating current in the regulated current (I,). 3. When ordering, please specify class A or B. 202 Ronm Diodes Zener diodes PTZ series Electrical characteristic curves 1200 1000 Glass apoxy board 32 x 30 x 1.6(mm) i t | ' I Ceramic board / 82x 30x 1.0(mm) POWER DISSIPATION : Pa (mW) 7 Unmounted Components NA \ 200 +s > 0 ! Oo 25 50 87.5 100 150 200 DIODE SURFACE TEMPERATURE (C) AMBIENT TEMPERATURE : Ta ("C) Figure 1 \ Glass Epoxy x2200x 16 : mm) 100 MOUNTING UNITS (pcs/substrate) Figure 3 DIODE SURFACE TEMPERATURE (C) E 8 10 114x 124x 16 (UNIT : om) 100 MOUNTING UNITS (pes/substrate) Figure 2 Diodes 20: