BFR92W
Aug-03-20011
NPN Silicon RF Transistor
For broadband amplifiers up to 2 GHz and
fast non-saturated switches at collector currents
from 0.5 mA to 20 mA
Complementary type: BFT 92W (PNP)
1
3
VSO05561
2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR92W P1s 1 = B 2 = E 3 = C SOT323
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 15 V
Collector-emitter voltage VCES 20
Collector-base voltage VCBO 20
Emitter-base voltage VEBO 2.5
Collector current IC30 mA
Base current IB4
Total power dissipation
TS
86 °C 1) Ptot 280 mW
Junction temperature Tj150 °C
Ambient temperature TA-65 ... 150
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point2) RthJS
230 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
BFR92W
Aug-03-20012
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 V(BR)CEO 15 - - V
Collector-emitter cutoff current
VCE = 20 V, VBE = 0 ICES - - 10 µA
Collector-base cutoff current
VCB = 10 V, IE = 0 ICBO - - 100 nA
Emitter-base cutoff current
VEB = 2.5 V, IC = 0 IEBO - - 100 µA
DC current gain
IC = 15 mA, VCE = 8 V hFE 40 100 200 -
BFR92W
Aug-03-20013
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
AC characteristics (verified by random sampling)
Transition frequency
IC = 15 mA, VCE = 8 V, f = 500 MHz fT3.5 5 - GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz Ccb - 0.43 0.6 pF
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz Cce - 0.25 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz Ceb - 0.7 -
Noise figure
IC = 2 mA, VCE = 6 V, ZS = ZSopt ,
f = 900 MHz
f = 1.8 GHz
F
-
-
1.8
2.9
-
-
dB
Power gain, maximum available 1)
IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
f = 1.8 GHz
Gma
-
-
15.5
10
-
-
Transducer gain
IC = 15 mA, VCE = 8 V, ZS = ZL = 50
,
f = 900 MHz
f = 1.8 GHz
|S21e|2
-
-
13
7.5
-
-
1Gma = |S21 / S12| (k-(k2-1)1/2)
BFR92W
Aug-03-20014
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS = 0.1213 fA
VAF = 30 V
NE = 1.9052 -
VAR = 14.599 V
NC = 1.371 -
RBM = 7.8145
CJE = 10.416 fF
TF = 26.796 ps
ITF = 4.4601 mA
VJC = 0.84079 V
TR = 1.2744 ns
MJS = 0-
XTI = 3-
BF = 94.733 -
IKF = 0.46227 A
BR = 10.729 -
IKR = 0.01 A
RB = 14.998
RE = 0.29088
VJE = 0.70618 V
XTF = 0.3817 -
PTF = 0 deg
MJC = 0.4085 -
CJS = 0fF
XTB = 0-
FC = 0.99545 -
NF = 1.0947 -
ISE = 129.55 fA
NR = 0.8983 -
ISC = 0.75557 fA
IRB = 0.01652 mA
RC = 0.13793
MJE = 0.34686 -
VTF = 0.32861 V
CJC = 946.47 fF
XCJC = 0.13464 -
VJS = 0.75 V
EG = 1.11 eV
TNOM 300 K
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
LBI = 0.57 nH
LBO = 0.4 nH
LEI = 0.43 nH
LEO = 0.5 nH
LCI = 0nH
LCO = 0.41 nH
CBE = 61 fF
CCB = 101 fF
CCE = 175 fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales
office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
BFR92W
Aug-03-20015
Total power dissipation Ptot = f (TS)
0 20 40 60 80 100 120 °C 150
TS
0
50
100
150
200
mW
300
P
tot
Permissible Pulse Load RthJS = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
P
totmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
BFR92W
Aug-03-20016
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0 4 8 12 16 V22
VCB
0.3
0.4
0.5
0.6
pF
0.8
Ccb
Transition frequency fT = f (IC)
VCE = Parameter
0 5 10 15 20 25 mA 35
IC
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
GHz 6
f
T
10V
3V
2V
1V
0.7V
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
VCE = Parameter
0 5 10 15 20 25 mA 35
IC
-6
-4
-2
0
2
4
6
8
10
12
14
dB
18
G
10V 5V
3V
2V
1V
0.7V
Power Gain Gma, Gms = f(IC)
f = 1.8GHz
VCE = Parameter
0 5 10 15 20 25 mA 35
IC
-6
-4
-2
0
2
4
6
8
dB
12
G
10V 5V
3V
2V
1V
0.7V
BFR92W
Aug-03-20017
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50
)
VCE = Parameter, f = 900MHz1)
0 5 10 15 20 mA 30
IC
0
5
10
15
dBm
25
IP
3
5V
4V
3V
2V
1V
Power Gain Gma, Gms = f(VCE):_____
|S21|2 = f(VCE):---------
f = Parameter
0246810V13
VCE
0
2
4
6
8
10
12
14
dB
18
G
0.9GHz
1.8GHz
0.9GHz
1.8GHz
IC=15mA
Power Gain |S21|2= f(f)
VCE = Parameter
0 0.5 1 1.5 2 2.5 GHz 3.5
f
-4
0
4
8
12
16
20
dB
28
S
21
10V
2V
1V
0.7V
IC=15mA
Power Gain Gma, Gms = f(f)
VCE = Parameter
0 0.5 1 1.5 2 2.5 GHz 3.5
f
-2
2
6
10
14
18
22
26
dB
32
G
10V
3V
0.7V
1V
IC=15mA
Package SOT323
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15 +0.1
-0.05
0.3+0.1
±0.1
0.9
12
3A
±0.2
2
acc. to
+0.2
DIN 6784
-0.05
0.650.65
M
3x
0.1
0.1 MIN.
0.1
M
0.2 A
0.6
0.8
1.6
0.65
0.65
Manufacturer
Type code BCR108W
Example
Pin 1
0.2
4
2.15 1.1
8
2.3
Pin 1
Package Outline
Foot Print
Marking Layout
Packing
Code E6327: Reel ø180 mm = 3.000 Pieces/Reel
Code E6433: Reel ø330 mm = 10.000 Pieces/Reel
Impressum
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.Infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon
Technologies Office.
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systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
