July 1996 NDP4060 / NDB4060 N-Channel Enhancement Mode Field Effect Transistor General Description Features 15A, 60V. RDS(ON) = 0.10 @ VGS=10V. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. ___________________________________________________________________________________________ D G S Absolute Maximum Ratings T C = 25C unles otherwise noted Symbol Parameter VDSS Drain-Source Voltage NDP4060 60 V VDGR Drain-Gate Voltage (RGS < 1 M) 60 V VGSS Gate-Source Voltage - Continuous 20 V ID Drain Current - Continuous PD Total Power Dissipation TJ,TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds - Nonrepetitive (tP < 50 s) - Pulsed Derate above 25C (c) 1997 Fairchild Semiconductor Corporation NDB4060 Units 40 15 A 45 50 W 0.33 W/C -65 to 175 C 275 C NDP4060 Rev. C Electrical Characteristics (TC = 25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units 40 mJ 15 A 250 A DRAIN-SOURCE AVALANCHE RATINGS (Note 1) W DSS Single Pulse Drain-Source Avalanche Energy IAR Maximum Drain-Source Avalanche Current VDD = 25 V, ID = 15 A OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V 60 V 1 mA IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA V TJ = 125C ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A TJ = 125C RDS(ON) Static Drain-Source On-Resistance 2 3 4 1.4 2.4 3.6 VGS = 10 V, ID = 7.5 A TJ = 125C ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V 15 gFS Forward Transconductance VDS = 10 V, ID = 7.5 A 3 0.078 0.1 0.12 0.165 A 5.7 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25, VGS = 0 V, f = 1.0 MHz 370 450 pF 165 200 pF 50 100 pF SWITCHING CHARACTERISTICS (Note 1) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) tf Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 30 V, ID = 15 A VGS = 10 V, RGEN = 25 8 20 ns 70 100 ns Turn - Off Delay Time 18 30 ns Turn - Off Fall Time 37 50 ns 12.7 17 nC VDS = 48 V ID = 15 A, VGS = 10 V 3.2 nC 7 nC NDP4060 Rev. C Electrical Characteristics (TC = 25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuos Drain-Source Diode Forward Current 15 A ISM Maximum Pulsed Drain-Source Diode Forward Current 45 A VSD Source-Drain Diode Forward Voltage 0.95 1.3 V 0.88 1.2 25 46 100 ns 1.5 3.4 7 A 3 C/W 62.5 C/W VGS = 0 V, IS = 7.5 A (Note 1) TJ = 125C trr Reverse Recovery Time Irr Reverse Recovery Current VGS = 0 V, IF = 15 A, dIF/dt = 100 A/s THERMAL CHARACTERISTICS RJC Thermal Resistance, Junction-to-Case RJA Thermal Resistance, Junction-to-Ambient Note: 1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. NDP4060 Rev. C Typical Electrical Characteristics 2 12 10 25 9.0 8.0 R DS(on) , NORMALIZED I D , DRAIN-SOURCE CURRENT (A) V GS = 2 0 V 20 7.0 15 10 6.0 5 5.0 DRAIN-SOURCE ON-RESISTANCE 30 0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) 4 8.0 1.4 9.0 10 1.2 1 12 20 0.8 0 5 5 10 15 20 I D , DRAIN CURRENT (A) 30 3 2.2 RDS(on) , NORMALIZED VGS = 10 V 1.8 1.6 1.4 1.2 1 0.8 DRAIN-SOURCE ON-RESISTANCE I D = 7.5 A 2 0.6 -50 VGS = 10 V 2.5 TJ = 125C 2 1.5 25C 1 -55C 0.5 -25 0 25 50 75 100 125 150 175 0 5 10 15 20 ID , DRAIN CURRENT (A) T J, JUNCTION TEMPERATURE (C) 25 30 Figure 4. On-Resistance Variation with Drain Current and Temperature. Figure 3. On-Resistance Variation with Temperature. 1.2 V DS = 1 0 V T = -55C J 25C 125C V th , NORMALIZED 15 10 5 0 2 4 6 8 V GS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 10 GATE-SOURCE THRESHOLD VOLTAGE 20 ID , DRAIN CURRENT (A) 25 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. Figure 1. On-Region Characteristics. R DS(ON), NORMALIZED 7.0 1.6 0.6 0 DRAIN-SOURCE ON-RESISTANCE VGS = 6.0V 1.8 VDS = VGS 1.1 I D = 250A 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 T J , JUNCTION TEMPERATURE (C) 150 175 Figure 6. Gate Threshold Variation with Temperature. NDP4060 Rev. C Typical Electrical Characteristics (continued) 20 VGS = 0V I D = 250A IS , REVERSE DRAIN CURRENT (A) BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 1.15 1.1 1.05 1 0.95 0.9 -50 -25 0 25 50 75 100 125 T J , JUNCTION TEMPERATURE (C) 150 175 10 5 25C 2 -55C 1 0.5 0.2 0.1 0.4 0.6 0.8 1 1.2 1.4 V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 7. Breakdown Voltage Variation with Temperature. Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 700 20 500 I D = 15A C iss 200 C oss 100 V GS = 0V 48V 10 5 V C rss 30 1 2 3 5 10 20 30 24V 15 GS f = 1 MHz 50 V DS = 12V , GATE-SOURCE VOLTAGE (V) 300 CAPACITANCE (pF) T J = 125C 0 60 0 5 10 V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 9. Capacitance Characteristics. t on t d(on) VGS R GEN t off tr RL t d(off) tf 90% 90% V OUT D VOUT 10% 10% INVERTED DUT G 20 Figure 10. Gate Charge Characteristics. VDD V IN 15 Q g , GATE CHARGE (nC) 90% S V IN 50% 50% 10% PULSE WIDTH Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms. NDP4060 Rev. C Typical Electrical Characteristics (continued) 70 TJ = -55C V DS = 1 5 V 10 50 25C 6 RD I D , DRAIN CURRENT (A) 20 125C 4 2 S(O LIM N) IT 1m 10 10 50 DC V GS = 20V 0u s s ms ms SINGLE PULSE 2 R JC = 3 o C/W 1 T C = 25C g FS , TRANSCONDUCTANCE (SIEMENS) 8 0 0 2 4 6 8 10 0.5 1 2 I D , DRAIN CURRENT (A) 5 10 30 50 70 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 14. Maximum Safe Operating Area. Figure 13. Transconductance Variation with Drain Current and Temperature. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.3 R JC (t) = r(t) * RJC R JC = 3.0 C/W 0.2 0.2 0.1 0.1 P(pk) 0.05 0.05 t1 0.02 0.03 0.02 Duty Cycle, D = t1 /t2 Single Pulse 0.01 0.01 t2 TJ - TC = P * R JC (t) 0.01 0.05 0.1 0.5 1 5 t1 , TIME (ms) 10 50 100 500 1000 Figure 15. Transient Thermal Response Curve. NDP4060 Rev. C