July 1996
NDP4060 / NDB4060
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
___________________________________________________________________________________________
Absolute Maximum Ratings TC = 25°C unles otherwise noted
Symbol Parameter NDP4060 NDB4060 Units
VDSS Drain-Source Voltage 60 V
VDGR Drain-Gate Voltage (RGS < 1 MΩ)60 V
VGSS Gate-Source Voltage - Continuous ± 20 V
- Nonrepetitive (tP < 50 µs) ± 40
IDDrain Current - Continuous ± 15 A
- Pulsed ± 45
PDTotal Power Dissipation 50 W
Derate above 25°C0.33 W/°C
TJ,TSTG Operating and Storage Temperature Range -65 to 175 °C
TLMaximum lead temperature for soldering purposes,
1/8" from case for 5 seconds 275 °C
NDP4060 Rev. C
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process has
been especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as automotive, DC/DC converters, PWM motor controls, and
other battery powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
15A, 60V. RDS(ON) = 0.10Ω @ VGS=10V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
S
D
G
© 1997 Fairchild Semiconductor Corporation
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
WDSS Single Pulse Drain-Source Avalanche
Energy VDD = 25 V, ID = 15 A 40 mJ
IAR Maximum Drain-Source Avalanche Current 15 A
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 V
IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V 250 µA
TJ = 125°C 1mA
IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA
ON CHARACTERISTICS (Note 1)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 234V
TJ = 125°C 1.4 2.4 3.6
RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 7.5 A 0.078 0.1 Ω
TJ = 125°C 0.12 0.165
ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V 15 A
gFS Forward Transconductance VDS = 10 V, ID = 7.5 A 35.7 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 25, VGS = 0 V,
f = 1.0 MHz 370 450 pF
Coss Output Capacitance 165 200 pF
Crss Reverse Transfer Capacitance 50 100 pF
SWITCHING CHARACTERISTICS (Note 1)
tD(on) Turn - On Delay Time VDD = 30 V, ID = 15 A
VGS = 10 V, RGEN = 25 Ω8 20 ns
trTurn - On Rise Time 70 100 ns
tD(off) Turn - Off Delay Time 18 30 ns
tfTurn - Off Fall Time 37 50 ns
QgTotal Gate Charge VDS = 48 V
ID = 15 A, VGS = 10 V 12.7 17 nC
Qgs Gate-Source Charge 3.2 nC
Qgd Gate-Drain Charge 7nC
NDP4060 Rev. C
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
ISMaximum Continuos Drain-Source Diode Forward Current 15 A
ISM Maximum Pulsed Drain-Source Diode Forward Current 45 A
VSD Source-Drain Diode Forward Voltage VGS = 0 V, IS = 7.5 A (Note 1) 0.95 1.3 V
TJ = 125°C 0.88 1.2
trr Reverse Recovery Time VGS = 0 V, IF = 15 A,
dIF/dt = 100 A/µs 25 46 100 ns
Irr Reverse Recovery Current 1.5 3.4 7A
THERMAL CHARACTERISTICS
RθJC Thermal Resistance, Junction-to-Case 3°C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP4060 Rev. C
NDP4060 Rev. C
Typical Electrical Characteristics
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
Figure 3. On-Resistance Variation
with Temperature. Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 6. Gate Threshold Variation with
Temperature.
Figure 5. Transfer Characteristics.
0 5 10 15 20 25 30
0.6
0.8
1
1.2
1.4
1.6
1.8
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
R , NORMALIZED
DS(on)
V = 6.0V
GS
9.0
10
7.0
8.0
20
12
0 5 10 15 20 25 30
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125°C
J
-55°C
D
V = 10 V
GS
25°C
R , NORMALIZED
DS(on)
2 4 6 8 10
0
5
10
15
20
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = 10V
DS
GS
D
T = -55°C
J25°C 125°C
-50 -25 0 25 50 75 100 125 150 175
0.6
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (°C)
GATE-SOURCE THRESHOLD VOLTAGE
I = 250µA
D
V = V
DS GS
J
V , NORMALIZED
th
0 1 2 3 4 5
0
5
10
15
20
25
30
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
V = 20V
GS
DS
D
6.0
5.0
7.0
8.0
10
12 9.0
-50 -25 0 25 50 75 100 125 150 175
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
V = 10 V
GS
I = 7.5 A
D
R , NORMALIZED
DS(ON)
NDP4060 Rev. C
Figure 7. Breakdown Voltage Variation with
Temperature. Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics.
Typical Electrical Characteristics (continued)
-50 -25 0 25 50 75 100 125 150 175
0.9
0.95
1
1.05
1.1
1.15
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
I = 250µA
D
BV , NORMALIZED
DSS
J
0.4 0.6 0.8 11.2 1.4
0.1
0.2
0.5
1
2
5
10
20
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
T = 125°C
J25°C -55°C
V = 0V
GS
SD
S
0 5 10 15 20
0
5
10
15
20
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 15A
DV = 12V
DS 24V 48V
1 2 3 5 10 20 30 60
30
50
100
200
300
500
700
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0V
GS
C
oss
C
rss
G
D
S
VDD
RL
V
V
IN
OUT
VGS DUT
RGEN
Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms.
10%
50%
90%
10%
90%
90%
50%
VIN
VOUT
on off
d(off) f
r
d(on)
t t
ttt
t
INVERTED
10%
PULSE WIDTH
NDP4060 Rev. C
0 2 4 6 8 10
0
2
4
6
8
I , DRAIN CURRENT (A)
g , TRANSCONDUCTANCE (SIEMENS)
T = -55°C
J
25°C
D
FS
V = 15V
DS
125°C
0.01 0.05 0.1 0.5 1 5 10 50 100 500 1000
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
t , TIME (ms)
TRANSIENT THERMAL RESISTANCE
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
1 2
R (t) = r(t) * R
R = 3.0 °C/W
θJC
θJC
θJC
T - T = P * R (t)
θJC
C
J
P(pk)
t
1 t
2
r(t), NORMALIZED EFFECTIVE
1
Figure 13. Transconductance Variation with
Drain Current and Temperature.Figure 14. Maximum Safe Operating Area.
Typical Electrical Characteristics (continued)
Figure 15. Transient Thermal Response Curve.
1 2 5 10 30 50 70
0.5
1
2
10
20
50
70
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
DC
RDS(ON) LIMIT
DS
100us
1ms
10ms
50ms
V = 20V
SINGLE PULSE
R = 3 C/W
T = 25°C
GS
C
θJC o
