SQJ990EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 100 V (D-S) 175 C MOSFETs FEATURESS PowerPAK(R) SO-8L Dual Asymmetric * TrenchFET(R) power MOSFET * AEC-Q101 qualified * 100 % Rg and UIS tested D1 * Optimized for synchronous buck applications D2 15 6. m m 13 5. 1 m m 4 G2 Bottom View Top View 2 3 G1 S2 1 S1 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D1 D2 PRODUCT SUMMARY N-CHANNEL 1 VDS (V) N-CHANNEL 2 100 100 RDS(on) () at VGS = 10 V 0.0400 0.0190 RDS(on) () at VGS = 4.5 V 0.0505 0.0235 17 34 ID (A) Configuration Dual N Package PowerPAK SO-8L Dual Asymmetric G1 G2 S1 N-Channel 1 MOSFET S2 N-Channel 2 MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 Drain-Source Voltage VDS 100 100 Gate-Source Voltage VGS Continuous Drain Current TC = 25 C TC = 125 C Continuous Source Current (Diode conduction) Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 C TC = 125 C Operating Junction and Storage Temperature Range 20 17 34 10 19 IS 20 a 44 IDM 40 80 IAS 17 28 EAS 14.4 39.2 27 48 9 16 ID PD TJ, Tstg -55 to +175 Soldering Recommendations (Peak temperature) d, e UNIT V A mJ W C 260 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB mount c SYMBOL N-CHANNEL 1 N-CHANNEL 2 RthJA 85 85 RthJC 5.5 3.1 UNIT C/W Notes a. Package limited. b. Pulse test; pulse width 300 s, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S16-1496-Rev. A, 25-Jul-16 Document Number: 77789 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ990EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 A N-Ch 1 100 - - VGS = 0 V, ID = 250 A N-Ch 2 100 - - VDS = VGS, ID = 250 A N-Ch 1 1.5 2.0 2.5 VDS = VGS, ID = 250 A N-Ch 2 1.5 2.0 2.5 N-Ch 1 - - 100 N-Ch 2 - - 100 VDS = 0 V, VGS = 20 V VGS = 0 V VDS = 100 V N-Ch 1 - - 1 VGS = 0 V VDS = 100 V N-Ch 2 - - 1 VGS = 0 V VDS = 100 V, TJ = 125 C N-Ch 1 - - 50 VGS = 0 V VDS = 100 V, TJ = 125 C N-Ch 2 - - 50 VGS = 0 V VDS = 100 V, TJ = 175 C N-Ch 1 - - 250 VGS = 0 V VDS = 100 V, TJ = 175 C N-Ch 2 - - 250 VGS = 10 V VDS 5 V N-Ch 1 10 - - VGS = 10 V VDS 5 V N-Ch 2 20 - - VGS = 10 V ID = 6 A N-Ch 1 - 0.0325 0.0400 VGS = 10 V ID = 10 A N-Ch 2 - 0.0154 0.0190 VGS = 10 V ID = 6 A, TJ = 125 C N-Ch 1 - - 0.0694 VGS = 10 V ID = 10 A, TJ = 125 C N-Ch 2 - - 0.0326 VGS = 10 V ID = 6 A, TJ = 175 C N-Ch 1 - - 0.0877 - 0.0412 VGS = 10 V ID = 10 A, TJ = 175 C N-Ch 2 - VGS = 4.5 V ID = 4 A N-Ch 1 - 0.0412 0.0505 VGS = 4.5 V ID = 8 A N-Ch 2 - 0.0191 0.0235 VDS = 10 V, ID = 6 A N-Ch 1 - 17 - VDS = 10 V, ID = 10 A N-Ch 2 - 34 - V nA A A S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Rg S16-1496-Rev. A, 25-Jul-16 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 475 650 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 1065 1390 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 280 375 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 560 750 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 18 25 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 37 50 VGS = 10 V VDS = 50 V, ID = 1 A N-Ch 1 - 10 15 VGS = 10 V VDS = 50 V, ID = 1 A N-Ch 2 - 20 30 VGS = 10 V VDS = 50 V, ID = 1 A N-Ch 1 - 2 - VGS = 10 V VDS = 50 V, ID = 1 A N-Ch 2 - 3 - VGS = 10 V VDS = 50 V, ID = 1 A N-Ch 1 - 3 - VGS = 10 V VDS = 50 V, ID = 60 A N-Ch 2 - 5 - N-Ch 1 1.2 2.5 3.8 N-Ch 2 0.6 1.4 2.2 f = 1 MHz pF nC Document Number: 77789 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ990EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Dynamic b Turn-On Delay Rise Time c Time c Turn-Off Delay Time c Fall Time c td(on) tr td(off) tf VDD = 50 V, RL = 5 , ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 8 15 VDD = 50 V, RL = 5 , ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 12 20 VDD = 50 V, RL = 5 , ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 3 5 VDD = 50 V, RL = 5 , ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 3 5 VDD = 50 V, RL = 5 , ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 22 35 VDD = 50 V, RL = 5 , ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 28 45 VDD = 50 V, RL = 5 , ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 21 35 VDD = 50 V, RL = 5 , ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 22 35 N-Ch 1 - - 40 N-Ch 2 - - 80 ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD IF = 6 A, VGS = 0 V N-Ch 1 - 0.87 1.2 IF = 10 A, VGS = 0 V N-Ch 2 - 0.84 1.2 A V Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-1496-Rev. A, 25-Jul-16 Document Number: 77789 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ990EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Axis Title Axis Title 50 25 10000 10000 TC = -55 C VGS = 4 V 20 100 10 TC = 25 C 20 1000 15 1st line 2nd line 1000 30 1st line 2nd line 2nd line ID - Drain Current (A) 40 2nd line gfs - Transconductance (S) VGS = 10 V thru 5 V TC = 125 C 10 100 5 VGS = 3 V 0 0 10 0 2 4 6 8 10 0 10 2 4 ID - Drain Current (A) 2nd line Output Characteristics Transconductance Axis Title 10 Axis Title 800 10000 10000 640 1st line 2nd line TC = 25 C 16 100 8 1000 Ciss 480 1st line 2nd line 1000 24 2nd line C - Capacitance (pF) 32 2nd line ID - Drain Current (A) 8 VDS - Drain-to-Source Voltage (V) 2nd line 40 320 100 Coss 160 TC = 125 C Crss TC = -55 C 0 0 10 0 2 4 6 8 10 10 0 20 60 80 VDS - Drain-to-Source Voltage (V) 2nd line Transfer Characteristics Capacitance Axis Title Axis Title 1st line 2nd line VGS = 4.5 V 100 0.03 VGS = 10 V 0.00 10 5 10 15 20 25 10000 ID = 1 A VDS = 50 V 8 1000 6 1st line 2nd line 1000 0.09 2nd line VGS - Gate-to-Source Voltage (V) 0.12 0.06 4 100 2 0 10 0 3 6 9 12 ID - Drain Current (A) 2nd line Qg - Total Gate Charge (nC) 2nd line On-Resistance vs. Drain Current Gate Charge S16-1496-Rev. A, 25-Jul-16 100 10 10000 0 40 VGS - Gate-to-Source Voltage (V) 2nd line 0.15 2nd line RDS(on) - On-Resistance () 6 15 Document Number: 77789 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ990EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Axis Title Axis Title 0.25 TJ = 150 C 1000 1 1st line 2nd line TJ = 25 C 0.1 100 0.01 0.001 0.2 0.4 0.6 0.8 1.0 0.20 1000 0.15 0.10 0.05 TJ = 25 C 0 1.2 2 4 8 10 VGS - Gate-to-Source Voltage (V) 2nd line Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 125 1st line 2nd line ID = 5 mA -0.4 100 -0.7 ID = 250 A -1.0 0 25 50 ID = 1 mA 122 1000 119 116 100 113 110 10 -50 -25 10000 1st line 2nd line 1000 -0.1 2nd line VDS - Drain-to-Source Voltage (V) 10000 0.2 2nd line VGS(th) Variance (V) 10 6 VSD - Source-to-Drain Voltage (V) 2nd line 0.5 75 100 125 150 175 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Temperature (C) 2nd line TJ - Junction Temperature (C) 2nd line Threshold Voltage Drain Source Breakdown vs. Junction Temperature Axis Title Axis Title 2.5 1000 10000 10000 ID = 6 A IDM limited VGS = 10 V 100 1000 1.7 VGS = 4.5 V 1.3 100 2nd line ID - Drain Current (A) 2.1 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 100 TJ = 150 C 0.00 10 0 10000 1000 10 100 s 1 1st line 2nd line 2nd line IS - Source Current (A) 10 2nd line RDS(on) - On-Resistance () 10000 1st line 2nd line 100 1 ms 100 10 ms 100 ms, 1 s, 10 s, DC Limited by RDS(on) (1) 0.1 0.9 TC = 25 C Single pulse 0.5 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (C) 2nd line On-Resistance vs. Junction Temperature S16-1496-Rev. A, 25-Jul-16 0.01 0.01 (1) 0.1 BVDSS limited 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Document Number: 77789 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ990EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty cycle = 0.5 0.2 Notes: 0.1 0.1 P DM 0.05 t1 t2 t1 1. Duty cycle, D = t2 2. Per unit base = R thJA = 85 C/W 0.02 3. TJM - TA = PDM ZthJA(t) 4. Surface mounted Single pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 Duty cycle = 0.5 1000 0.2 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 0.1 0.1 100 0.05 0.02 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Note * The characteristics shown in the graph: - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) is given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. S16-1496-Rev. A, 25-Jul-16 Document Number: 77789 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ990EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Axis Title Axis Title 80 50 10000 10000 TC = -55 C 32 100 16 TC = 25 C 40 1000 30 1st line 2nd line 1000 VGS = 4 V 48 1st line 2nd line 2nd line ID - Drain Current (A) 64 2nd line gfs - Transconductance (S) VGS = 10 V thru 5 V TC = 125 C 20 100 10 VGS = 3 V 0 0 10 0 2 4 6 8 10 0 10 3 6 ID - Drain Current (A) 2nd line Output Characteristics Transconductance Axis Title 15 Axis Title 1800 10000 10000 1440 1st line 2nd line 24 100 TC = 25 C TC = 125 C 12 Ciss 1000 1080 1st line 2nd line 1000 36 2nd line C - Capacitance (pF) 48 2nd line ID - Drain Current (A) 12 VDS - Drain-to-Source Voltage (V) 2nd line 60 720 100 Coss 360 Crss TC = -55 C 0 0 10 0 2 4 6 8 10 10 0 25 75 VDS - Drain-to-Source Voltage (V) 2nd line Transfer Characteristics Capacitance Axis Title Axis Title 1st line 2nd line VGS = 4.5 V 0.020 100 VGS = 10 V 0.010 0.000 10 20 30 40 50 10000 ID = 1 A VDS = 50 V 8 1000 6 1st line 2nd line 1000 0.030 2nd line VGS - Gate-to-Source Voltage (V) 0.040 10 4 100 2 0 10 0 5 10 15 20 ID - Drain Current (A) 2nd line Qg - Total Gate Charge (nC) 2nd line On-Resistance vs. Drain Current Gate Charge S16-1496-Rev. A, 25-Jul-16 100 10 10000 0 50 VGS - Gate-to-Source Voltage (V) 2nd line 0.050 2nd line RDS(on) - On-Resistance () 9 25 Document Number: 77789 7 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ990EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Axis Title Axis Title 0.10 TJ = 25 C 1 1000 1st line 2nd line 2nd line IS - Source Current (A) 10 TJ = 150 C 0.1 100 0.01 2nd line RDS(on) - On-Resistance () 10000 10000 0.08 1000 0.06 0.04 1st line 2nd line 100 TJ = 150 C 100 0.02 TJ = 25 C 0.001 0.00 10 0.2 0.4 0.6 0.8 1.0 10 0 1.2 2 4 10 VGS - Gate-to-Source Voltage (V) 2nd line Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 125 1st line 2nd line ID = 5 mA -0.4 100 ID = 250 A -0.7 -1.0 0 25 50 ID = 1 mA 121 1000 117 113 100 109 105 10 -50 -25 10000 1st line 2nd line 1000 -0.1 2nd line VDS - Drain-to-Source Voltage (V) 10000 0.2 2nd line VGS(th) Variance (V) 8 VSD - Source-to-Drain Voltage (V) 2nd line 0.5 75 100 125 150 175 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Temperature (C) 2nd line TJ - Junction Temperature (C) 2nd line Threshold Voltage Drain Source Breakdown vs. Junction Temperature Axis Title Axis Title 2.5 1000 10000 10000 ID = 10 A IDM limited VGS = 10 V 100 1000 1.7 VGS = 4.5 V 1.3 100 2nd line ID - Drain Current (A) 2.1 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 6 100 s 1000 10 1st line 2nd line 0 1 ms 1 10 ms 100 ms, 1 s,100 10 s, DC Limited by RDS(on) (1) 0.1 0.9 TC = 25 C Single pulse 0.5 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (C) 2nd line On-Resistance vs. Junction Temperature S16-1496-Rev. A, 25-Jul-16 0.01 0.01 (1) 0.1 BVDSS limited 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Document Number: 77789 8 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ990EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty cycle = 0.5 0.2 Notes: 0.1 P DM 0.1 0.05 t1 t2 1. Duty cycle, D = t1 t2 2. Per unit base = R thJA = 85 C/W 0.02 3. TJM - TA = PDM ZthJA(t) Single pulse 4. Surface mounted 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 Duty cycle = 0.5 1000 0.2 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 0.1 100 0.05 0.02 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Note * The characteristics shown in the graph: - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) is given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77789. S16-1496-Rev. A, 25-Jul-16 Document Number: 77789 9 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK(R) SO-8L Case Outline 2 Revision: 05-Aug-2019 Document Number: 66934 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 2.75 2.85 2.95 0.108 0.112 0.116 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 q 2.96 0 - 0.117 10 0 - 10 ECN: S19-0643-Rev. B, 05-Aug-2019 DWG: 6044 Note * Millimeters will gover Revision: 05-Aug-2019 Document Number: 66934 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK(R) SO-8L DUAL 6.7500 (0.266) 5.1300 (0.202) 0.4100 (0.016) 0, 0 1.7300 (0.068) 0.5000 (0.020) 1.9800 (0.078) 0.9150 (0.036) 0.5850 (0.023) 0.7200 (0.028) 2.1100 (0.083) 3.0750 (0.121) 7.7500 (0.305) 0.5100 (0.020) 0.2550 (0.010) 6.1500 (0.242) 3.9900 (0.157) 2.5650 (0.101) 0.4700 (0.019) 1.2700 (0.050) 0.4100 (0.016) Recommended Minimum Pads Dimensions in mm (inches) Keep-out 6.75 (0.266) x 7.75 (0.305) Revision: 07-Feb-12 1 Document Number: 63817 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2021 1 Document Number: 91000