SQJ990EP
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Automotive Dual N-Channel 100 V (D-S) 175 °C MOSFETs
FEATURESS
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Optimized for synchronous buck applications
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
PRODUCT SUMMARY
N-CHANNEL 1 N-CHANNEL 2
VDS (V) 100 100
RDS(on) () at VGS = 10 V 0.0400 0.0190
RDS(on) () at VGS = 4.5 V 0.0505 0.0235
ID (A) 17 34
Configuration Dual N
Package PowerPAK SO-8L Dual Asymmetric
PowerPAK® SO-8L Dual Asymmetric
Bottom View
2
G1
3
S2
4
G2
1
S1
D2
D1
Top View
1
6.15 mm
5.13 mm
1
6.1
5
m
m
5
13
m
m
N-Channel 1 MOSFET
D1
G1
S1
N-Channel 2 MOSFET
D2
G2
S2
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 UNIT
Drain-Source Voltage VDS 100 100 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current TC = 25 °C ID
17 34
A
TC = 125 °C 10 19
Continuous Source Current (Diode conduction) IS20 a 44
Pulsed Drain Current bIDM 40 80
Single Pulse Avalanche Current L = 0.1 mH IAS 17 28
Single Pulse Avalanche Energy EAS 14.4 39.2 mJ
Maximum Power Dissipation bTC = 25 °C PD
27 48 W
TC = 125 °C 9 16
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C
Soldering Recommendations (Peak temperature) d, e 260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 UNIT
Junction-to-Ambient PCB mount cRthJA 85 85 °C/W
Junction-to-Case (Drain) RthJC 5.5 3.1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS
VGS = 0 V, ID = 250 μA N-Ch 1 100 - -
V
VGS = 0 V, ID = 250 μA N-Ch 2 100 - -
Gate-Source Threshold Voltage VGS(th)
VDS = VGS, ID = 250 μA N-Ch 1 1.5 2.0 2.5
VDS = VGS, ID = 250 μA N-Ch 2 1.5 2.0 2.5
Gate-Source Leakage IGSS V
DS = 0 V, VGS = ± 20 V N-Ch 1 - - ± 100 nA
N-Ch 2 - - ± 100
Zero Gate Voltage Drain Current IDSS
VGS = 0 V VDS = 100 V N-Ch 1 - - 1
μA
VGS = 0 V VDS = 100 V N-Ch 2 - - 1
VGS = 0 V VDS = 100 V, TJ = 125 °C N-Ch 1 - - 50
VGS = 0 V VDS = 100 V, TJ = 125 °C N-Ch 2 - - 50
VGS = 0 V VDS = 100 V, TJ = 175 °C N-Ch 1 - - 250
VGS = 0 V VDS = 100 V, TJ = 175 °C N-Ch 2 - - 250
On-State Drain Current a I
D(on) VGS = 10 V VDS 5 V N-Ch 1 10 - - A
VGS = 10 V VDS 5 V N-Ch 2 20 - -
Drain-Source On-State Resistance a R
DS(on)
VGS = 10 V ID = 6 A N-Ch 1 - 0.0325 0.0400
VGS = 10 V ID = 10 A N-Ch 2 - 0.0154 0.0190
VGS = 10 V ID = 6 A, TJ = 125 °C N-Ch 1 - - 0.0694
VGS = 10 V ID = 10 A, TJ = 125 °C N-Ch 2 - - 0.0326
VGS = 10 V ID = 6 A, TJ = 175 °C N-Ch 1 - - 0.0877
VGS = 10 V ID = 10 A, TJ = 175 °C N-Ch 2 - - 0.0412
VGS = 4.5 V ID = 4 A N-Ch 1 - 0.0412 0.0505
VGS = 4.5 V ID = 8 A N-Ch 2 - 0.0191 0.0235
Forward Transconductance b gfs
VDS = 10 V, ID = 6 A N-Ch 1 - 17 - S
VDS = 10 V, ID = 10 A N-Ch 2 - 34 -
Dynamic b
Input Capacitance Ciss VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 475 650
pF
VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 1065 1390
Output Capacitance Coss VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 280 375
VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 560 750
Reverse Transfer Capacitance Crss VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 18 25
VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 37 50
Total Gate Charge c Qg VGS = 10 V VDS = 50 V, ID = 1 A N-Ch 1 - 10 15
nC
VGS = 10 V VDS = 50 V, ID = 1 A N-Ch 2 - 20 30
Gate-Source Charge c Qgs VGS = 10 V VDS = 50 V, ID = 1 A N-Ch 1 - 2 -
VGS = 10 V VDS = 50 V, ID = 1 A N-Ch 2 - 3 -
Gate-Drain Charge c Qgd VGS = 10 V VDS = 50 V, ID = 1 A N-Ch 1 - 3 -
VGS = 10 V VDS = 50 V, ID = 60 A N-Ch 2 - 5 -
Gate Resistance Rg f = 1 MHz N-Ch 1 1.2 2.5 3.8
N-Ch 2 0.6 1.4 2.2
SQJ990EP
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S16-1496-Rev. A, 25-Jul-16 3Document Number: 77789
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Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Dynamic b
Turn-On Delay Time c td(on)
VDD = 50 V, RL = 5 ,
ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 8 15
ns
VDD = 50 V, RL = 5 ,
ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 12 20
Rise Time c tr
VDD = 50 V, RL = 5 ,
ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 3 5
VDD = 50 V, RL = 5 ,
ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 3 5
Turn-Off Delay Time c td(off)
VDD = 50 V, RL = 5 ,
ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 22 35
VDD = 50 V, RL = 5 ,
ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 28 45
Fall Time c tf
VDD = 50 V, RL = 5 ,
ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 21 35
VDD = 50 V, RL = 5 ,
ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 22 35
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a ISM
N-Ch 1 - - 40 A
N-Ch 2 - - 80
Forward Voltage VSD
IF = 6 A, VGS = 0 V N-Ch 1 - 0.87 1.2 V
IF = 10 A, VGS = 0 V N-Ch 2 - 0.84 1.2
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
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S16-1496-Rev. A, 25-Jul-16 4Document Number: 77789
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Transconductance
Capacitance
Gate Charge
10
100
1000
10000
0
10
20
30
40
50
0246810
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
2nd line
VGS = 10 V thru 5 V
VGS = 4 V
VGS = 3 V
10
100
1000
10000
0
8
16
24
32
40
0246810
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VGS - Gate-to-Source Voltage (V)
2nd line
TC= 25 °C
TC=-55 °C
TC= 125 °C
10
100
1000
10000
0.00
0.03
0.06
0.09
0.12
0.15
0 5 10 15 20 25
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
ID- Drain Current (A)
2nd line
VGS = 4.5 V
VGS = 10 V
10
100
1000
10000
0
5
10
15
20
25
0246810
Axis Title
1st line
2nd line
2nd line
gfs - Transconductance (S)
ID- Drain Current (A)
2nd line
T
C
= 25 °C
TC=-55 °C
TC= 125 °C
10
100
1000
10000
0
160
320
480
640
800
0 20406080100
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
2nd line
Crss
Coss
Ciss
10
100
1000
10000
0
2
4
6
8
10
03691215
Axis Title
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
2nd line
ID= 1 A
VDS = 50 V
SQJ990EP
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S16-1496-Rev. A, 25-Jul-16 5Document Number: 77789
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Source Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
Safe Operating Area
10
100
1000
10000
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
IS- Source Current (A)
VSD - Source-to-Drain Voltage (V)
2nd line
TJ= 150 °C
TJ= 25 °C
10
100
1000
10000
-1.0
-0.7
-0.4
-0.1
0.2
0.5
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
VGS(th) Variance (V)
TJ- Temperature (°C)
2nd line
ID= 5 mA
ID= 250 µA
10
100
1000
10000
0.5
0.9
1.3
1.7
2.1
2.5
-50-25 0 255075100125150175
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
TJ- Junction Temperature (°C)
2nd line
ID= 6 A
VGS = 10 V
VGS = 4.5 V
10
100
1000
10000
0.00
0.05
0.10
0.15
0.20
0.25
0246810
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
2nd line
TJ= 25 °C
TJ= 150 °C
10
100
1000
10000
110
113
116
119
122
125
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
TJ- Junction Temperature (°C)
2nd line
ID= 1 mA
10
100
1000
10000
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
IDM limited
Limited by RDS(on) (1)
TC= 25 °C
Single pulse BVDSS limited
100 ms, 1 s, 10 s, DC
10 ms
1 ms
100 µs
SQJ990EP
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S16-1496-Rev. A, 25-Jul-16 6Document Number: 77789
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the graph:
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
is given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
10-3 10-2 110 60010-1
10-4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single pulse
Duty cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty cycle, D =
2. Per unit base = R
thJA
= 85 °C/W
3. T
JM -
T
A
= PDM
Z
th
JA(t
)
t
1
t
2
t
1
t
2
Notes:
4. Surface mounted
PDM
10
100
1000
10000
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Axis Title
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
2nd line
0.1
0.05
0.02
Single pulse
Duty cycle = 0.5
0.2
SQJ990EP
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S16-1496-Rev. A, 25-Jul-16 7Document Number: 77789
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N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Transconductance
Capacitance
Gate Charge
10
100
1000
10000
0
16
32
48
64
80
0246810
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
2nd line
VGS = 10 V thru 5 V
VGS = 4 V
VGS = 3 V
10
100
1000
10000
0
12
24
36
48
60
0246810
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VGS - Gate-to-Source Voltage (V)
2nd line
TC= 25 °C
TC=-55 °C
TC= 125 °C
10
100
1000
10000
0.000
0.010
0.020
0.030
0.040
0.050
0 1020304050
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
ID- Drain Current (A)
2nd line
VGS = 4.5 V
VGS = 10 V
10
100
1000
10000
0
10
20
30
40
50
03691215
Axis Title
1st line
2nd line
2nd line
gfs - Transconductance (S)
ID- Drain Current (A)
2nd line
T
C
= 25 °C
TC=-55 °C
TC= 125 °C
10
100
1000
10000
0
360
720
1080
1440
1800
0255075100
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
2nd line
Crss
Coss
Ciss
10
100
1000
10000
0
2
4
6
8
10
0 5 10 15 20 25
Axis Title
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
2nd line
ID= 1 A
VDS = 50 V
SQJ990EP
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S16-1496-Rev. A, 25-Jul-16 8Document Number: 77789
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Source Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
Safe Operating Area
10
100
1000
10000
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
IS- Source Current (A)
VSD - Source-to-Drain Voltage (V)
2nd line
TJ= 150 °C
TJ= 25 °C
10
100
1000
10000
-1.0
-0.7
-0.4
-0.1
0.2
0.5
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
VGS(th) Variance (V)
TJ- Temperature (°C)
2nd line
ID= 5 mA
ID= 250 µA
10
100
1000
10000
0.5
0.9
1.3
1.7
2.1
2.5
-50-25 0 255075100125150175
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
TJ- Junction Temperature (°C)
2nd line
ID= 10 A
VGS = 10 V
VGS = 4.5 V
10
100
1000
10000
0.00
0.02
0.04
0.06
0.08
0.10
0246810
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
2nd line
TJ= 25 °C
TJ= 150 °C
10
100
1000
10000
105
109
113
117
121
125
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
TJ- Junction Temperature (°C)
2nd line
ID= 1 mA
10
100
1000
10000
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
IDM limited
Limited by RDS(on) (1)
TC= 25 °C
Single pulse BVDSS limited
100 ms, 1 s, 10 s, DC
10 ms
1 ms
100 µs
SQJ990EP
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S16-1496-Rev. A, 25-Jul-16 9Document Number: 77789
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the graph:
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
is given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?77789.
10-3 10-2 110600
10-1
10 -4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single pulse
Duty cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty cycle, D =
2. Per unit base = R
thJA
= 85 °C/W
3. T
JM -
T
A
= PDM
Z
th
JA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface mounted
PDM
10
100
1000
10000
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Axis Title
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
2nd line
0.1
0.05
0.02
Single pulse
Duty cycle = 0.5
0.2
Package Information
www.vishay.com Vishay Siliconix
Revision: 05-Aug-2019 1Document Number: 66934
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PowerPAK® SO-8L Case Outline 2
Package Information
www.vishay.com Vishay Siliconix
Revision: 05-Aug-2019 2Document Number: 66934
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Note
• Millimeters will gover
DIM. MILLIMETERS INCHES
MIN. NOM. MAX. MIN. NOM. MAX.
A 1.00 1.07 1.14 0.039 0.042 0.045
A1 0.00 - 0.127 0.00 - 0.005
b 0.33 0.41 0.48 0.013 0.016 0.019
b1 0.44 0.51 0.58 0.017 0.020 0.023
b2 4.80 4.90 5.00 0.189 0.193 0.197
b3 0.094 0.004
b4 0.47 0.019
c 0.20 0.25 0.30 0.008 0.010 0.012
D 5.00 5.13 5.25 0.197 0.202 0.207
D1 4.80 4.90 5.00 0.189 0.193 0.197
D2 3.86 3.96 4.06 0.152 0.156 0.160
D3 1.63 1.73 1.83 0.064 0.068 0.072
e 1.27 BSC 0.050 BSC
E 6.05 6.15 6.25 0.238 0.242 0.246
E1 4.27 4.37 4.47 0.168 0.172 0.176
E2 2.75 2.85 2.95 0.108 0.112 0.116
F - - 0.15 - - 0.006
L 0.62 0.72 0.82 0.024 0.028 0.032
L1 0.92 1.07 1.22 0.036 0.042 0.048
K 0.51 0.020
W 0.23 0.009
W1 0.41 0.016
W2 2.82 0.111
W3 2.96 0.117
q 0° - 10° 0° - 10°
ECN: S19-0643-Rev. B, 05-Aug-2019
DWG: 6044
PAD Pattern
www.vishay.com Vishay Siliconix
Revision: 07-Feb-12 1Document Number: 63817
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L DUAL
Recommended Minimum Pads
Dimensions in mm (inches)
Keep-out 6.75 (0.266) x 7.75 (0.305)
6.7500
(0.266)
5.1300
(0.202)
0.4700
(0.019)
0.5100
(0.020)
0.4100
(0.016)
1.2700
(0.050)
0.5000
(0.020)
3.0750
(0.121)
0.4100
(0.016)
0, 0
0.2550
(0.010)
0.7200
(0.028)
0.5850
(0.023)
6.1500
(0.242)
7.7500
(0.305)
2.5650
(0.101)
3.9900
(0.157)
1.9800
(0.078)
2.1100
(0.083)
0.9150
(0.036)
1.7300
(0.068)
Legal Disclaimer Notice
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Revision: 01-Jan-2021 1Document Number: 91000
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