KBU6A thru KBU6M
Vishay General Semiconductor
Document Number: 88657
Revision: 15-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit boards
• High surge current capability
• High case dielectric strength of 1500 VRMS
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for monitor, TV, printer, SMPS, adapter,
audio equipment, and home appliances applications.
MECHANICAL DATA
Case: KBU
Epoxy meets UL 94V-0 flammability rating
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD22-B102
E4 suffix for consumer grade
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
e4
PRIMARY CHARACTERISTICS
IF(AV) 6 A
VRRM 50 V to 1000 V
IFSM 200 A
IR5 µA
VF1.0 V
TJ max. 150 °C
Case Style KBU
~
~
~~
Notes:
(1) Recommended mounted position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw
(2) Thermal resistance from junction to ambient with units in free air, P.C.B. mounted on 0.5 x 0.5" (12 x 12 mm) copper pads, 0.375" (9.5 mm)
lead length
(3) Thermal resistance from junction to case with units mounted on a 2.6 x 1.4 x 0.06" thick (6.5 x 3.5 x 0.15 cm) aluminum plate
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL KBU6A KBU6B KBU6D KBU6G KBU6J KBU6K KBU6M UNIT
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward
rectified output current at
TC = 100 °C (1)(2)
TA = 40 °C (3) IF(AV)
6.0
6.0 A
Peak forward surge current single sine-wave
superimposed on rated load IFSM 250 A
Operating junction and storage temperature range TJ, TSTG - 50 to + 150 °C
KBU6A thru KBU6M
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88657
Revision: 15-Apr-08
2
Note:
(1) Thermal resistance from junction to ambient with units in free air, P.C.B. mounted on 0.5 x 0.5" (12 x 12 mm) copper pads, 0.375" (9.5 mm)
lead length
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL KBU6A KBU6B KBU6D KBU6G KBU6J KBU6K KBU6M UNIT
Maximum instantaneous
forward drop per diode 6.0 A VF 1.0 V
Maximum DC reverse
current at rated DC
blocking voltage per diode
TA = 25 °C
TA = 125 °C IR 5.0
1.0
µA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL KBU6A KBU6B KBU6D KBU6G KBU6J KBU6K KBU6M UNIT
Typical thermal resistance (1) RθJA
RθJC
8.6
3.1 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
KBU6J-E4/51 8.0 51 250 Anti-static PVC tray
Figure 1. Derating Curve Output Rectified Current
50 100 150
0
2
4
6
0
P.C.B. Mounting, TA
0.375" (9.5 mm) Lead Length
with 0.5 x 0.5" (12 x 12 mm)
Copper Pad Areas
Heatsink Mounting,
TC, 2.6 x 1.4 x 0.06"
(6.5 x 3.5 x 1.5 cm)
Al. Plated
Temperature (°C)
Average Forward Current (A)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
10 100
75
100
125
150
175
200
225
250
1
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
TJ = 150 °C
Single Sine-Wave
1.0 Cycle
KBU6A thru KBU6M
Vishay General Semiconductor
Document Number: 88657
Revision: 15-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.6 0.7
100
10
1
0.1
0.80.9 1.0 1.1 1.2 1.3
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
020 40 60 80100
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
TJ = 100 °C
TJ = 25 °C
Figure 5. Typical Junction Capacitance Per Diode
110 100
10
100
1000
Reverse Voltage (V)
Junction Capacitance (pF)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.160 (4.1)
0.065 (1.7)
0.185 (4.7)
0.895 (22.7)
0.935 (23.7)
0.140 (3.6) 0.165 (4.2)
0.085(2.2)
0.240 (6.09)
0.200 (5.08)
0.220 (5.6)
0.180 (4.6)
0.075 (1.9) R TYP. (2 Places)
45°
0.205 (5.2)
0.185 (4.7)
0.052 (1.3)
0.048(1.2)
0.280 (7.1)
0.260 (6.6)
DIA.
0.760
(19.3)
MAX.
0.700
(17.8)
0.660
(16.8)
1.0
(25.4)
MIN.
0.455 (11.3)
0.405 (10.3)
Case Style KBU
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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