SHINDENGEN VX-2 Series Power MOSFET 2SK3013 (FP16W60VX2) N-Channel Enhancement type OUTLINE DIMENSIONS Case : ITO-3P 600V 16A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply of AC 100-200V input Inverter Power Factor Control Circuit (Unit : mm) RATINGS Absolute Maximum Ratings iTc = 25j Item Symbol Conditions Storage Temperature T stg T ch Channel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Continuous Drain CurrentiDCj I DP Continuous Drain CurrentiPeak) Continuous Source CurrentiDCj IS Total Power Dissipation PT I AS Single Pulse Avalanche Current Tch = 25 Vdis Terminals to case, AC 1 minute Dielectric Strength TOR (Recommended torque : 0.5Nmj Mounting Torque Copyright & Copy;2002 Shindengen Electric Mfg.Co.,Ltd. Ratings -55150 150 600 }30 16 48 16 70 16 2 0.8 Unit V A W A kV Nm 2SK3013 ( FP16W60VX2 ) VX-2 Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage I DSS Zero Gate Voltage Drain Current I GSS Gate-Source Leakage Current gfs Forward Tran]conductance Static Drain-Source On-]tate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage AEjc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance C oss Turn-On Time ton Turn-Off Time toff Conditions I D = 1mA, VGS = 0V VDS = 600V, VGS = 0V VGS = }30V, VDS = 0V I D = 8A, VDS = 10V I D = 8A, VGS = 10V I D = 1mA, VDS = 10V I S = 8A, VGS = 0V junction to case VGS = 10V, I D = 16A, VDD = 400V VDS = 10V, VGS = 0V, f = 1MHZ I D = 8A, VGS = 10V, RL = 19 Copyright & Copy;2002 Shindengen Electric Mfg.Co.,Ltd. Min. 600 Typ. 6. 2 10. 0 0. 45 3 2. 5 85 2300 180 480 130 260 Max. 250 }0. 1 Unit V EA S V 0. 6 3. 5 1. 5 1. 78 /L nC pF 280 500 ns 2SK3013 Transfer Characteristics 32 Tc = -55C 25C 28 100C Drain Current ID [A] 24 150C 20 16 12 8 VDS = 25V pulse test TYP 4 0 0 5 10 15 Gate-Source Voltage VGS [V] 20 2SK3013 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [] 10 1 ID = 8A 0.1 0.01 VGS = 10V pulse test TYP -50 0 50 100 Case Temperature Tc [C] 150 2SK3013 Gate Threshold Voltage 6 Gate Threshold Voltage VTH [V] 5 4 3 2 1 0 VDS = 10V ID = 1mA TYP -50 0 50 100 Case Temperature Tc [C] 150 2SK3013 Safe Operating Area 100 48 16 10 100s Drain Current ID [A] 200s R DS(ON) limit 1ms 1 10ms DC 0.1 Tc = 25C Single Pulse 0.01 1 10 100 Drain-Source Voltage VDS [V] 1000 Transient Thermal Impedance jc(t) [C/W] 0.01 10-4 0.1 1 10 10-3 10-2 2SK3013 Time t [s] 10-1 100 Transient Thermal Impedance 101 102 2SK3013 Single Avalanche Energy Derating Single Avalanche Energy Derating [%] 100 80 60 40 20 0 0 50 100 Starting Channel Temperature Tch [C] 150 2SK3013 Capacitance 10000 Capacitance Ciss Coss Crss [pF] Ciss 1000 Coss Crss 100 f=1MHz Tc=25C TYP 10 0 20 40 60 80 Drain-Source Voltage VDS [V] 100 Single Avalanche Current IAS [A] 0.1 0.1 1 10 100 1 2SK3013 Inductance L [mH] EAR = 50mJ IAS = 16A 10 EAS = 500mJ VDD = 90V VGS = 15V 0V Rg = 15 Single Avalanche Current - Inductive Load 100 2SK3013 Power Derating 100 Power Derating [%] 80 60 40 20 0 0 50 100 Case Temperature Tc [C] 150 2SK3013 Gate Charge Characteristics 500 20 400 15 VDD = 400V VGS 200V 300 100V 10 200 5 100 ID = 16A TYP 0 0 50 100 Gate Charge Qg [nC] 150 0 200 Gate-Source Voltage VGS [V] Drain-Source Voltage VDS [V] VDS