SHINDENGEN
2SK3013
Copyright & Copy;2002 Shindengen Electric Mfg.Co.,Ltd.
OUTLINE DIMENSIONS
RATINGS
(FP16W60VX2)
600V 16A
VX-2 Series Power MOSFET N-Channel Enhancement type
(Unit : mm)
Case : ITO-3P
Switching power supply of
AC 100-200V input
Inverter
Power Factor Control Circuit
APPLICATION
Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
The static Rds(on) is small.
The switching time is fast.
Avalanche resistance guaranteed.
FEATURES
Absolute Maximum Ratings iTc = 25j
Item Symbol Conditions Ratings Unit
Storage Temperature Tstg -55`150
Channel Temperature Tch 150
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS }30
Continuous Drain CurrentiDCjID16
Continuous Drain CurrentiPeak) IDP 48 A
Continuous Source CurrentiDCjIS16
Total Power Dissipation PT70 W
Single Pulse Avalanche Current IAS Tch = 2516A
Dielectric Strength Vdis Terminals to case, AC 1 minute 2kV
Mounting Torque TOR (Recommended torque : 0.5N¥mj0.8 N¥m
Copyright & Copy;2002 Shindengen Electric Mfg.Co.,Ltd.
2SK3013 ( FP16W60VX2 )
VX-2 Series Power MOSFET
Electrical Characteristics Tc = 25
Item Symbol Conditions Min. Typ. Max. Unit
Drain-Source Breakdown Voltage V(BR)DSS ID = 1mA, VGS = 0V 600 V
Zero Gate Voltage Drain Current IDSS VDS = 600V, VGS = 0V 250 ÊA
Gate-Source Leakage Current IGSS VGS = }30V, VDS = 0V }0.1
Forward Tran]conductance gfs ID = 8A, VDS = 10V 6.2 10.0 S
Stat i c Dr ai n-Sou rce On-]tate Resistance RDS(ON) ID = 8A, VGS = 10V 0.45 0. 6
Gate Threshold Voltage VTH ID = 1mA, VDS = 10V 2.5 3 3. 5 V
Source-Drain Diode Forward Voltage VSD IS = 8A, VGS = 0V 1.5
Thermal Resistance Æjc junction to case 1.78 /L
Total Gate Charge Qg VGS = 10V, ID = 16A, VDD = 400V 85 nC
Input Capacitance Ciss 2300
Reverse Transfer Capacitance Crss VDS = 10V, VGS = 0V, f = 1MHZ180 pF
Output Capacitance Coss 480
Turn-On Time ton ID = 8A, VGS = 10V, RL = 19130 280 ns
Turn-Off Time toff 260 500
0 5 10 15 20
0
4
8
12
16
20
24
28
32
2SK3013 Transfer Characteristics
VDS = 25V
pulse test
TYP
Tc = −55°C25°C
100°C
150°C
Gate-Source Voltage VGS [V]
Drain Current ID [A]
Static Drain-Source On-state Resistance
0.01
0.1
1
10
-50 0 50 100 150
2SK3013
VGS = 10V
pulse test
TYP
ID = 8A
Case Temperature Tc [°C]
Static Drain-Source On-state Resistance RDS(ON)
[Ω]
Gate Threshold Voltage
0
1
2
3
4
5
6
-50 0 50 100 150
2SK3013
VDS = 10V
ID = 1mA
TYP
Case Temperature Tc [°C]
Gate Threshold Voltage VTH
[V]
Safe Operating Area
0.01
0.1
1
10
100
110 100 1000
2SK3013
100µs
Tc = 25°C
Single Pulse
200µs
1ms
10ms
DC
48
16
Drain-Source Voltage VDS [V]
Drain Current ID [A]
RDS(ON)
limit
Transient Thermal Impedance
0.01
0.1
1
10
2SK3013
10-4 10-3 10-2 10-1 100101102
0.05 0.50.2 20 5052 200 500 2000 5000
0.02 0.05 0.50.2 20520.0050.002
Time t [s]
Transient Thermal Impedance θjc(t) [°C/W]
0
20
40
60
80
100
050 100 150
2SK3013
Single Avalanche Energy Derating [%]
Starting Channel Temperature Tch [°C]
Single Avalanche Energy Derating
Capacitance
10
100
1000
10000
020 40 60 80 100
2SK3013
0.005
f=1MHz
Tc=25°C
TYP
Ciss
Coss
Crss
Drain-Source Voltage VDS [V]
Capacitance Ciss Coss Crss [pF]
Single Avalanche Current - Inductive Load
0.1
1
10
100
2SK3013
0.1 1 10 100
0.05 0.50.2 20 5052 200 500 2000 5000
0.02 0.05 0.50.2 20520.0050.002
VDD = 90V
VGS = 15V → 0V
Rg = 15Ω
IAS = 16A
EAS = 500mJ
EAR = 50mJ
Inductance L [mH]
Single Avalanche Current IAS [A]
0
20
40
60
80
100
050 100 150
2SK3013 Power Derating
Power Derating [%]
Case Temperature Tc [°C]
050 100 150 200
0
100
200
300
400
500
2SK3013
0
5
10
15
20
200V
Gate Charge Characteristics
ID = 16A
TYP
100V
VDD = 400V VGS
VDS
Gate Charge Qg [nC]
Drain-Source Voltage VDS [V]
Gate-Source Voltage VGS [V]