December 2009 Doc ID 15696 Rev 2 1/17
17
STD5N95K3, STF5N95K3
STP5N95K3, STU5N95K3
N-channel 950 V, 3 Ω, 4 A, DPAK, TO-220, TO-220FP, IPAK
Zener-protected SuperMESH3™ Power MOSFET
Features
■100% avalanche tested
■Extremely large avalanche performance
■Gate charge minimized
■Very low intrinsic capacitances
■Zener-protected
Application
■Switching applications
Description
The new SuperMESH3™ series of power
MOSFETS is the result of the fine-tuning of ST's
well-established strip-based PowerMESH™
layout with a new optimized vertical structure. The
innovative design offer significantly reduced on-
resistance, exceptional dynamic performance and
very large avalanche capability, making the device
suitable for the most demanding applications.
Figure 1. Internal schematic diagram
Type VDSS RDS(on) max IDPw
STD5N95K3 950 V < 3.5 Ω4 A 90 W
STF5N95K3 950 V < 3.5 Ω4 A 25 W
STP5N95K3 950 V < 3.5 Ω4 A 90 W
STU5N95K3 950 V < 3.5 Ω4 A 90 W
123
TO-220
IPAK
TO-220FP
12
3
3
2
1
DPAK
1
3
D(2)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order codes Marking Packages Packaging
STD5N95K3 5N95K3 DPAK Tape and reel
STF5N95K3 5N95K3 TO-220FP Tube
STP5N95K3 5N95K3 TO-220 Tube
STU5N95K3 5N95K3 IPAK Tube
www.st.com
Contents STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
2/17 Doc ID 15696 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 Electrical ratings
Doc ID 15696 Rev 2 3/17
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220 TO-220FP IPAK DPAK
VGS Gate- source voltage 30 V
IDDrain current (continuous) at TC = 25 °C 4 4(1)
1. Limited only by maximum temperature allowed
4A
IDDrain current (continuous) at TC = 100 °C 3 3(1) 3A
IDM (2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 16 16(1) 16 A
PTOT Total dissipation at TC = 25 °C 90 25 90 W
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by TJ max) 4A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V) 100 mJ
dv/dt(3)
3. ISD ≤ 4 A, di/dt ≤ 100 A/µs, peak VDS ≤ V(BR)DSS
Peak diode recovery voltage slope 5 V/ns
VISO Insulation withstand voltage (AC) 2500
TJ
Tstg
Operating junction temperature
Storage temperature -55 to 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-220 TO-220FP IPAK DPAK
Rthj-case Thermal resistance junction-case max 1.39 5 1.39 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.50 100 °C/W
Rthj-pcb(1)
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Thermal resistance junction-pcb max 50 °C/W
TJ
Maximum lead temperature for soldering
purpose 300 °C/W
Electrical characteristics STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
4/17 Doc ID 15696 Rev 2
2 Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 4. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source
breakdown voltage ID = 1 mA, VGS = 0 950 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, TC=125 °C
1
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0) VGS = ± 20 V; VDS=0 10 µA
VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V
RDS(on)
Static drain-source on
resistance VGS = 10 V, ID = 2 A 3 3.5 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0 -
460
38
1
-
pF
pF
pF
Co(tr)(1)
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
Equivalent
capacitance time
related
VDS = 0 to 760 V, VGS = 0 - 970 - pF
Co(er)(2)
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
Equivalent
capacitance energy
related
VDS = 0 to 760 V, VGS = 0 - 15 - pF
RgGate input resistance f=1 MHz open drain - 5.5 - Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 760 V, ID = 4 A,
VGS = 10 V
(see Figure 20)
-
19
4.7
12
-
nC
nC
nC
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 Electrical characteristics
Doc ID 15696 Rev 2 5/17
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 475 V, ID = 2 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
-
17
7
32
18
-
ns
ns
ns
ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max Unit
ISD
ISDM (1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed) -4
16
A
A
VSD (2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD = 4 A, VGS = 0 - 1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 21)
-
410
3.5
17
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 21)
-
516
4.1
16
ns
µC
A
Table 8. Gate-source Zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
BVGSO
Gate-source breakdown
voltage Igs=± 1 mA (open drain) 30 - V
Electrical characteristics STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
6/17 Doc ID 15696 Rev 2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
Figure 6. Safe operating area for IPAK, DPAK Figure 7. Thermal impedance for IPAK, DPAK
)$


  6$36

!
/PERATIONINTHISAREAIS
,IMITEDBYMAX2$3ON
S
S
MS
MS
4J#
4C#
3INLGE
PULSE

!-V
)$


  6$36

!
/PERATIONINTHISAREAIS
,IMITEDBYMAX2$3ON
S
S
MS
MS
4J#
4C#
3INLGE
PULSE

!-V
I
D
10
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Sinlge
pulse
0.01
AM05586v1
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 Electrical characteristics
Doc ID 15696 Rev 2 7/17
Figure 8. Output characteristics Figure 9. Transfer characteristics
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
Figure 12. Capacitance variations Figure 13. Output capacitance stored energy
)$
 6$36

!
6
6
6'36
!-V
)$
6'36
!
!-V
6'3
1GN#
6

 

6$$6
)$!






6$3
6'3


!-V
2$3ON




 )$!
/HM



6'36
   
!-V
#



  6$36
P&


#ISS
#OSS
#RSS
!-V
%OSS
 6$36
*

 
 
  
!-V
Electrical characteristics STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
8/17 Doc ID 15696 Rev 2
Figure 14. Normalized gate threshold voltage
vs temperature
Figure 15. Normalized on resistance vs
temperature
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized BVDSS vs temperature
Figure 18. Maximum avalanche energy vs
starting Tj
6'3TH



  4*#
NORM



  




 
!-V
2$3ON




 4*#
NORM
 
    


!-V
63$
  )3$!
6
  





4*#
4*#
4*#
  
!-V
"6$33
 4*#
NORM
 
  






 
)$M!
!-V
%!3
 4*#
M*
 
 




 





 )$!
6$$6
!-V
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 Test circuits
Doc ID 15696 Rev 2 9/17
3 Test circuits
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
Figure 21. Test circuit for inductive load
switching and diode recovery times
Figure 22. Unclamped inductive load test
circuit
Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
µF
3.3
µFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
µF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
BB
RG
G
FAST
DIODE
D
S
L=100µH
µF
3.31000
µFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
µF
3.3
µFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
Package mechanical data STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
10/17 Doc ID 15696 Rev 2
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 Package mechanical data
Doc ID 15696 Rev 2 11/17
Figure 25. TO-220FP drawing
Table 9. TO-220FP mechanical data
Dim.
mm
Min. Typ. Max.
A4.4 4.6
B2.5 2.7
D 2.5 2.75
E0.45 0.7
F0.75 1
F1 1.15 1.70
F2 1.15 1.70
G4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
7012510_Rev_K
A
B
H
Dia
L7
D
E
L6 L5
L2
L3
L4
F1 F2
F
G
G1
Package mechanical data STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
12/17 Doc ID 15696 Rev 2
DIM. mm.
.xampyt.nim
04.202.2A
01.109.01A
32.030.02A
09.046.0b
04.502.54b
06.054.0c
06.084.02c
02.600.6D
01.51D
06.604
.6E
07.41E
82.2e
06.404.41e
01.0153.9H
1L
08.21L
08.02L
106.04L
02.0R
V2 0 o8 o
TO-252 (DPAK) mechanical data
0068772_G
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 Package mechanical data
Doc ID 15696 Rev 2 13/17
TO-220 type A mechanical data
Dim mm
Min Typ Max
A 4.40 4.60
b0.61 0.88
b1 1.14 1.70
c0.480.70
D 15.25 15.75
D1 1.27
E10 10.40
e 2.40 2.70
e1 4.95 5.15
F1.231.32
H1 6.20 6.60
J1 2.40 2.72
L1314
L1 3.50 3.93
L20 16.40
L3028.90
∅P3.75 3.85
Q 2.65 2.95
0015988_Rev_S
Package mechanical data STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
14/17 Doc ID 15696 Rev 2
DIM. mm.
min. typ max.
A 2.20 2.40
A1 0.901.10
b0.64 0.90
b20.95
b4 5.20 5.40
c 0.45 0.60
c2 0.480.60
D 6.00 6.20
E 6.40 6.60
e2.28
e1 4.40 4.60
H 16.10
L9.00 9.40
(L1) 0.801.20
L2 0.80
V1 10
o
TO-251 (IPAK) mechanical data
0068771_H
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 Packaging mechanical data
Doc ID 15696 Rev 2 15/17
5 Packaging mechanical data
TAPE AND REEL SHIPMENT
DPAK FOOTPRINT
DIM. mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B1.5 0.059
C 12.8 13.2 0.504 0.520
D20.2 0.795
G 16.4 18.4 0.645 0.724
N50 1.968
T 22.4 0.881
BASE QTY BULK QTY
2500 2500
REEL MECHANICAL DATA
DIM. mm inch
MIN. MAX. MIN. MAX.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D1.5 1.6 0.059 0.063
D1 1.5 0.059
E1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R40 1.574
W 15.7 16.3 0.618 0.641
TAPE MECHANICAL DATA
All dimensions are in millimeters
Revision history STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
16/17 Doc ID 15696 Rev 2
6 Revision history
Table 10. Document revision history
Date Revision Changes
12-May-2009 1 First release
11-Dec-2009 2 Document status promoted from preliminary data to datasheet
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
Doc ID 15696 Rev 2 17/17
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2009 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com