2SMES-01CT - Omron Electronic Components LLC

2SMES-01

Surface-mounted MEMS Switch

Surface-mounted, ultracompact SPDT

MEMS switch usable up to 10-GHz band

(typical).

■Exceptional high-frequency characteristics in a

broad spectrum up to 10 GHz (typical)

At 8 GHz (50Ω):

Isolation: 30 dB min.,

Insertion loss: 1 dB max.

■Ultracompact size: 5.2×3.0×1.8 mm (L×W×H)

■Contact switching endurance of over 100 million

cycles. (0.5 mA at 0.5 VDC, resistive load)

■Power consumption of 10 µW max.

Equivalent Circuit Design Application Example

• Semiconductor testers

• High-frequency measurement devices

• RF components

List of Models

Standard Models with Surface-mounting Terminals

RoHS compliant

+V2GND

+V1

RF_2

RF_CRF_1

Classification Structure Contact form Model Packaging Package

quantity

Model Minimum

order

Single-side stable Plastic sealed SPDT 2SMES-01 2” IC Pack 56/Tray 2SMES-01 1

JEDEC Tray 250/Tray 2SMES-01CT 150

2SMES-012SMES-01

Specifications

■Contact Switching Ratings

Note: Unless otherwise specified, initial values are based on a

temperature of 23°C and a humidity of 65%.

* These values are for a V.SWR of 1.2 or less at the load.

■High-frequency Characteristics

Note: 1. The impedance of the measurement system is 50 Ω.

2. The above values are initial values.

3. These values are for a V.SWR of less than 1.2 at the

load.

4. Unless otherwise specified, initial values are based on

a temperature of 23°C and a humidity of 65%.

■Input Ratings

Note: Unless otherwise specified, initial values are based on a temperature of 23°C and a humidity of 65%.

Characteristics

Note: 1. The above values are initial values.

2. Unless otherwise specified, initial values are based on a temperature of 23°C and a humidity of 65%.

* The contact resistance was measured with 10 mA at 1 VDC with a voltage drop method.

Item Load Resistive load

Rated load 0.5 mA at 0.5 VDC

Rated carry current 100 mA at 10 VDC

RF: 30 dBm*

Maximum switching voltage 0.5 VDC

Maximum switching current 0.5 mADC

Maximum switching capacity 0.25 mW

Item Frequency 2 GHz 8 GHz 10 GHz 12 GHz

Isolation --- 30 dB ---

Insertion Loss --- 1 dB 1 dB

(Typ.)

3dB

Return Loss --- 10 dB ---

Maximum peak power 36 dBm --- ---

Maximum carry power 30 dBm --- ---

Rated voltage (VDC) Rated current (mA) Must operate

voltage (V)

Must release

voltage (V)

Absolute

maximum voltage

(V)

Rated power

consumption (µW)

DC 34±5% --- 90% max. of rated

voltage

10% min. of rated

voltage

40 10

Classification Single-side stable model

Item Model 2SMES-01

Contact resistance 1,500 mΩ max. *

Operating time 100 µs max. (Depends on the rated voltage operation.)

Release time 100 µs max. (Depends on the rated voltage operation.)

Insulation

resistance

V-GND 100 MΩ (at 40 VDC)

others 100 MΩ (at 100 VDC)

Vibration

resistance

Destruction 10 Hz to 500 Hz 10 G

Malfunction 10 Hz to 500 Hz 10 G

Shock

resistance

Destruction 1,000 m/s2 (100 G)

Malfunction 1,000 m/s2 (100 G)

Life

expectancy

Mechanical 100,000,000 Operations min.

Electrical 100,000,000 Operations min.

ESD 100 V (Human body model)

Ambient temperature Operating: −20°C to 85°C (with no icing or condensation)

Ambient humidity Operating: 5% to 85%

Weight Approx. 0.1 g

2SMES-012SMES-01

Typical Example of Drive Circuit for RF MEMS Switch

1. This Switch uses an integrated structure for the DC-GND on the input side and the RF-GND on the output side. For a relay drive cir-

cuit, first be sure to ground the GND pins and then use a high-side switch to turn the operating voltage ON and OFF.

2. This Switch uses an electrostatic drive relay. To turn OFF the relay, the charge accumulated on the primary side must be discharged.

Install a discharge circuit in the relay drive circuit. The resistance value for discharge circuit must be 1 MΩ or less. If there is no dis-

charge circuit, the relay will not turn OFF. This may result in contact sticking.

3. This Switch is designed so that the electrostatic actuator operates at a high speed. Because of this, the time constant of the drive

waveform may affect the operating characteristics and life performance of the Switch. Therefore, the drive circuit must be designed

so that the square wave time constant (τ) in the vicinity of the operating input pins (Vcont_1 and Vcont_2) is greater than 0.5 µs and

less than 10 µs.

2SMES-01

INPUT 1

DRIVER IC Vcont_2

Vcont_1

+Vcc

INPUT 2

RF_1

RF_com

RF_2

Gate Driver

2SMES-012SMES-01

Engineering Data (for reference)

■High Frequency Characteristics

Insertion Loss

Return Loss

Isolation

Note: 1. These measurement results are for an ambient temperature of 23°C.

2. These high-frequency characteristics were measured with an RF probe (the Switch was not mounted to a PCB).

3. These high-frequency characteristics are the initial measurement results.

4. The high-frequency characteristics depend on the mounting board. Perform sufficient testing on the actual device, including du-

rability tests, before actual use.

Frequency (GHz)

Average value (initial)

(dB)

−3.0 03691215

−2.5

−2.0

−1.5

−1.0

−0.5

0.0

Frequency (GHz)

Average value (initial)

(dB)

−50 03691215

−40

−30

−20

−10

Frequency (GHz)

Average value (initial)

(dB)

−80

−60

−70

03691215

−50

−40

−30

−20

−10

2SMES-012SMES-01

Electrical Endurance (Contact Resistance Shift)

Electrical Endurance (Pickup Voltage/Release Voltage)

Ambient Temperature vs. Pickup voltage/Release Voltage

Operating cycles (Million operations)

Contact Resistance Shift (mΩ)

0 10 20 30 40 50 60 70 80 90 100

1000

800

600

400

200

−200

−400

−600

−800

−1000

0.5 mA at 0.5 mVDC, Hot switch

N = 125 Samples (250 contacts)

Operating cycles (Million operations)

Voltage (V)

0 10203040 5060708090100

N = 125 Samples (250 contacts)

Operate Voltage (Ave):

Must Operate Voltage (30.6 V = 90%)

Must Release Voltage (3.4 V = 10%)

Release Voltage (Ave):

Ambient Temperature (°C)

Pickup/Release Voltage (V)

−30 −20 −10 0 10 20 30 40 50 60 70 80 90 100

N = 8 Samples

Pickup Voltage

Release Voltage

2SMES-012SMES-01

Dimensions

Note: All units are in millimeters unless otherwise indicated.

Precautions for PCB Design

High-frequency GND Pad and High-frequency GND Plane Connections

Note: indicates a high-frequency GND pad.

• Connect all high-frequency GND pads directly to the high-fre-

quency GND plane.

• Connect each high-frequency GND pad to the internal high-fre-

quency GND plane through the through holes.

5.2±0.1

3±0.1

1.85±0.15

1 pin mark

0.5 0.6

No.1No.5

No.7No.11

0.45

0.7 0.7

0.7

1.4

0.7

0.6

1.6

0.6

2.3

1.35

3.6

2.65

0.45

0.6

4.9

3.7

2.55

1.45

0.4 1.5

0.4 0.4

2.2

No.5No.1

No.11 No.7

1.1

0.5

1.7

No.

Pin Arrangement

GND

RF_com

GND

RF_2

GND

Vcont_2

GND

Vcont_1

GND

RF_1

Mounting PAD Dimensions (Top View)

The dimensional tolerance for all measurements is ±0.1 mm.

No.7No.11

No.5No.1

Surface high-frequency GND plane

Through hole to the internal high-frequency GND plane

In case of Coplanar Waveguide

No.5

No.7

No.1

No.11

Internal Connection (Top View)

No.5No.1

No.7No.11

Through hole to the internal

high-frequency GND plane

In case of Microstrip Line

2SMES-012SMES-01

Recommended Soldering Method

• We recommend a thickness of 150 to 200 µm for the solder

cream.

• We recommend that you use the recommended mounting PAD

dimensions for the land pattern.

• IRS (Infrared Reflow Soldering) Temperature Profile Conditions

During solder reflow, set the temperature conditions for the pins

and top surface of the case so that they are at or below the con-

ditions listed in the following table, and then confirm that the con-

ditions are met on the actual device.

• Avoid rapid cooling when cleaning after solder mounting. Use an

alcohol-based or water-based cleaning solution. Maintain a

cleaning temperature of 60°C max.

Safety Precautions

●Handling the MEMS Switch

• Use the MEMS Switch as soon as possible and within one week

after opening the moisture-proof packaging. If the MEMS Switch

is left exposed for a long period of time after opening the mois-

ture-proof packaging, this may negatively affect the external ap-

pearance and sealing performance of the Switch after it is

mounted. If you must store the Switch after it has been removed

from the moisture-proof packaging, place the Switch back into

the moisture-proof packaging, seal the packaging with tape, and

store in an environment of 10 to 30°C at 30% max. If baking is

performed after the Switch is removed from the packaging again,

do so at 80°C, 5% max. for 60 hours or less (one time only) and

mount the switch within 72 hours after baking (MSL3).

• Avoid rapid cooling when cleaning after solder mounting. Use an

alcohol-based or water-based cleaning solution. Also, maintain a

cleaning temperature of 60°C max.

• Do not perform hot switching that exceeds the ratings. (The rated

load is 0.5 mA at 0.5 VDC with a resistance load.)

• Do not use any ultrasonic cleaning methods.

• The MEMS Switch is extremely susceptible to static electricity.

Take the necessary precautions to eliminate static electricity

when handling the Switch (100 V max.). Implement measures to

eliminate static electricity before you handle the MEMS Switch.

Contact OMRON for additional guidelines.

• Do not drop the Switch or attempt to disassemble it.

• Do not apply force to the Switch that would result in the Switch

deformation or changes in quality.

●Usage, Storage, and Transportation Environments

• Avoid contact with direct sunlight during use, storage, and trans-

portation. Store the Switch at room temperature, normal humidi-

ty, and normal pressure.

• Avoid exposure to corrosive gases during usage, storage, and

transportation.

●Long-term Continuous ON Contacts

• Using the MEMS Switch in a circuit that is designed so that no

switching is performed and current is applied to the Switch for a

long period of time (more than 24 hours) may cause unstable

contacts. If the MEMS Switch must be used in this kind of circuit,

we recommend adding fail-safe circuits in case the contact fails.

●Claw Securing Force During Automatic Mounting

• During automatic insertion of an MEMS Switch, be sure to set the

securing force of each claw to the following value so that the RF

MEMS Switch’s characteristics will be maintained.

●Precautions for Safe Usage

• Always turn OFF the power supply to the drive and load sides

and conduct thorough safety checks before replacing the MEMS

Switch or performing any wiring.

• Do not touch the MEMS Switch pins when power is being sup-

plied. Doing so may result in electrical shock.

●Coating

• Do not use a silicon-based coating when mounting the Switch to

the PCB. Also, do not use any cleaning solutions that contain sil-

icon when cleaning the PCB after the relay is mounted. The

cleaning solution may remain as a coating on the relay surface.)

Time (s)

Preheating Soldering

t1t2

Temperature (°C)

Item Preheating (T1 to T2, t1) Soldering (T3, t2) Peak value (T4)

Terminal 150°C to 180°C

120 s max.

230°C min.

30 s max.

250°C max.

Upper surface of case --- --- 255°C max.

Precautions for Correct Use

Direction C: 2.0 N max.

2SMES-012SMES-01

For Reference Only

High-frequency Characteristic Measurement

Methods and Measurement PCBs

The high-frequency characteristics of the 2SMES-01 are mea-

sured as described below.

PCB for High-frequency Evaluation

Board thickness t = 1.6 mm

Material: MEGTRON6 (R5775, permittivity: 3.6)

Signal line width = 0.5 mm, Space = 0.2 mm (CPW)

Agilent N5230

Vector Network

Analyzer

2SMES-01

Device mounting area

In the interest of product improvement, specifications are subject to change without notice.

ALL DIMENSIONS SHOWN ARE IN MILLIMETERS.

To convert millimeters into inches, multiply by 0.03937. To convert grams into ounces, multiply by 0.03527.

Cat. No. A178-E1-03

0712

OMRON Corporation

Micro Devices Division H.Q.

Micro Devices Division

686-1 Ichimiyake, Yasu,

Shiga, 520-2326 JAPAN

Tel: (81)77-588-9200/Fax: (81)77-588-9909