Copyright © Harris Corporation 1995
5-12
SEMICONDUCTOR
MUR870E, MUR880E, MUR890E,
MUR8100E, RURP870, RURP880,
RURP890, RURP8100
8A, 700V - 1000V Ultrafast Diodes
Features
• Ultrafast with Soft Recovery Characteristic
(tRR < 75ns)
• +175oC Rated Junction Temperature
• Reverse Voltage Up to 1000V
• Avalanche Energy Rated
Applications
• Switching Power Supply
• Power Switching Circuits
• General Purpose
Description
MUR870E, MUR880E, MUR890E, MUR8100E and
RUR870, RUR880, RUR890, RUR8100 are ultrafast dual
diodes (tRR < 75ns) with soft recovery characteristics. They
have a low forward voltage drop and are of planar, silicon
nitride passivated, ion-implanted, epitaxial construction.
These devices are intended for use as energy steering/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and ultrafast recovery with soft recovery char-
acteristics minimizes ringing and electrical noise in many
power switching circuits thus reducing power loss in the
switching transistor.
April 1995
Package
JEDEC TO-220AC
Symbol
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
MUR870E TO-220AC MUR870
MUR880E TO-220AC MUR880
MUR890E TO-220AC MUR890
MUR8100E TO-220AC MUR8100
RURP870 TO-220AC RURP870
RURP880 TO-220AC RURP880
RURP890 TO-220AC RURP890
RURP8100 TO-220AC RURP8100
NOTE: When ordering, use entire part number.
CATHODE
(FLANGE)
CATHODE
ANODE
K
A
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
MUR870E
RURP870 MUR880E
RURP880 MUR890E
RURP890 MUR8100E
RURP8100
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . .VRRM 700V 800V 900V 1000V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . VRWM 700V 800V 900V 1000V
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR700V 800V 900V 1000V
Average Rectified Forward Current . . . . . . . . . . . . . . . . IF(AV)
Total device forward current at rated
VR and TC = +150oC)
8A 8A 8A 8A
Peak Forward Repetitive Current. . . . . . . . . . . . . . . . . . IFRM
(Rated VR, square wave 20kHZ) 16A 16A 16A 16A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . .IFSM
(Surge applied at rated load condition
halfwave 1 phase 60Hz)
100A 100A 100A 100A
Operating and Storage Temperature . . . . . . . . . . . . TSTG, TJ-55oC to +175oC -55oC to +175oC -55oC to +175oC -55oC to +175oC
File Number 2780.3
5-13
MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100
Electrical Specifications TC = +25oC, Unless Otherwise Specified.
SYMBOL TEST
CONDITION
LIMITS
UNITS
MUR870E,
RURP870 MUR880E,
RURP880 MUR890E,
RURP890 MUR8100E,
RURP8100
MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
VFIF = 8A
TC = +150oC- - 1.50 - - 1.50 - - 1.50 - - 1.50 V
IF = 8A
TC = +25oC- - 1.80 - - 1.80 - - 1.80 - - 1.80 V
IR at
TC = +150oCVR = 700V - - 500 - - - - - - - - - µA
VR = 800V - - - - - 500 - - - - - - µA
VR = 900V - - - - - - - - 500 - - - µA
VR = 1000V - - - - - - - - - - - 500 µA
IR at
TC = +25oCVR = 700V - - 100 - - - - - - - - - µA
VR = 800V - - - - - 100 - - - - - - µA
VR = 900V - - - - - - - - 100 - - - µA
VR = 1000V - - - - - - - - - - - 100 µA
tRR IF = 1A - - 100 - - 100 - - 100 - - 100 ns
IF = 8A - - 110 - - 110 - - 110 - - 110 ns
tAIF = 1A -40- -40- -40- - 40 - ns
I
F
= 8A -45- -45- -45- - 45 - ns
t
BI
F
= 1A -20- -20- -20- - 20 - ns
I
F
= 8A -20- -20- -20- - 20 - ns
R
θJC - - 2.0 - - 2.0 - - 2.0 - - 2.0 oC/W
EAVL See Fig. 7 & 8 - - 20 - - 20 - - 20 - - 20 mj
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
tRR = Reverse recovery time at dIF/dt = 100A/µs (See Figure 2), summation of tA + tB.
tA = Time to reach peak reverse current at dIF/dt = 100A/µs (See Figure 2).
tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
RθJC = Thermal resistance junction to case.
EAVL = Controlled avalanche energy (See Figures 7 and 8).
pw = pulse width.
D = duty cycle.
FIGURE 1. tRR TEST CIRCUIT FIGURE 2. DEFINITIONS OF tRR, tA AND tB
C1
LLOOP
DUT
Q3
R3
Q4
Q2
R1
R2
-V4
Q1
-V2
0
0
+V1
t1
t2
t3R4
+V3
V1 AMPLITUDE CONTROLS I F
V2 AMPLITUDE CONTROLS d IF/dt
L1 = SELF INDUCTANCE OF R4t1≥ 5tA(MAX)
t2 > tRR
t3 > 0
L1
R4
tA(MIN)
10
≤
+LLOOP
IFtRR
tAtB
0
IRM
0.25 IRM
VR
VRM (REC)
dIF
dt
5-14
MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100
Typical Performance Curves
FIGURE 3. FORWARD VOLTAGE vs FORWARD CURRENT
CHARACTERISTIC FIGURE 4. AVERAGE FORWARD CURRENT vs AVERAGE
POWER DISSIPATION
FIGURE 5. AVERAGE FORWARD CURRENT vs CASE
TEMPERATURE FIGURE 6. AVERAGE FORWARD CURRENT vs AMBIENT
TEMPERATURE
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. CURRENT VOLTAGE WAVEFORM
ILpeak = 1A, L = 40mH, R < 0.1Ω, EAVL = (1/2) LI2[VAVL/(VAVL - VDD)]
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURRENT (A)
+175oC MAXIMUM
+25oC TYPICAL
+25oC MAXIMUM
3.5
2.5
1.5
0.1 1.0 10.0 60.0
0.0
3.0
2.0
1.0
0.5
PD, AVERAGE POWER DISSIPATION (W)
IF, AVERAGE FORWARD CURRENT (A)
DC
TJ = +175oC
SQUARE WAVE
24
12
6
0035 10
18
7
22
20
16
14
10
8
4
2
12 4 6 89
T
C
, CASE TEMPERATURE (oC)
10
8
4
2
140 160 180
6
0150 170
DC
SQUARE WAVE
9
7
5
3
1
IF(AVG), AVERAGE CURRENT (A)
10
9
8
7
6
5
4
3
00 40 80 120 160 180
TA, AMBIENT TEMPERATURE (oC)
IF(AVG), AVERAGE CURRENT (A)
RθJA = +12oC/W
20 60 100 140
2
1
RθJA = +60oC/W
(NO HEAT SINK)
12V
Q2
Q1
12V
130Ω
DUT
CURRENT
SENSE
+
LR
1MΩ
VDD
130Ω
-
VDD
IV
t
0t
1t
2
I
L
V
AVL
t
