*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CDSOD323-TxxC – TVS Diode Array Series
Features
■Lead free as standard (RoHS compliant*)
■Protects 1 line or 1 I/O port
■Bidirectional configuration
■ESD protection >40 kV
■Low capacitance ~3 pF typical
■Replaces 0805 MLV devices
Applications
■Cell phones
■PDAs and notebooks
■Digital cameras
■MP3 players and GPS
■USB interface
General Information
Electrical & Thermal Characteristics (@ TA= 25 °C Unless Otherwise Noted)
The markets of portable communications, computing and video equipment are
challenging the semiconductor industry to develop increasingly smaller electronic
components.
Bourns offers Transient Voltage Suppressor Array diodes for surge and ESD
protection applications, in SOD323 package size format. The Transient Voltage
Supressor Array series offers a choice of voltage types ranging from 3 V to 24 V in a
unidirectional or bidirectional configuration. Bourns®Chip Diodes conform to JEDEC
standards, are easy to handle on standard pick and place equipment and their flat
configuration minimizes roll away.
The Bourns®device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC
61000-4-5 (Surge) requirements.
Notes:
1. Part numbers with suffix “C” indicate bidirectional device, i.e. CDSOD323-T05C.
2. For bidirectional devices only, the electrical specifications apply in both directions.
Parameter Symbol Value Unit
Peak Pulse Power (tp= 8/20 µs) PPP 350 W
Operating Temperature TJ-55 ˚C to 150 ˚C ˚C
Storage Temperature TSTG -55 ˚C to 150 ˚C ˚C
CDSOD323-
Parameter Symbol Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi-
T03 T03C T05 T05C T08 T08C T12 T12C Unit
Min. Breakdown Voltage @ 1 mA VBR 4.0 4.0 6.0 6.0 8.5 8.5 13.3 13.3 V
Working Peak Voltage VWM 3.3 3.3 5.0 5.0 8.0 8.0 12.0 12.0 V
Maximum Clamping Voltage @ IP = 1 A VF7.0 7.0 9.8 9.8 13.4 13.4 19.0 19.0 V
Maximum Clamping Voltage VC19.0 V 19.0 V 18.3 V 18.3 V 18.5 V 18.5 V 28.3 V 28.3 V V
@ 8/20 µs @ IPP @ 20 A @ 20 A @ 17 A @ 17 A @ 17 A @ 17 A @ 11 A @ 11 A
Maximum Leakage Current @ VWM ID55552211µA
Typical Capacitance @ 0 V, 1 MHz CJ3pF