Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 5 1Publication Order Number:
P6SMB6.8AT3/D
P6SMB6.8AT3 Series
600 Watt Peak Power Zener
Transient Voltage Suppressors
Unidirectional*
The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMB series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetic package and is ideally suited for use in communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.
Specification Features:
•Working Peak Reverse Voltage Range – 5.8 to 171 V
•Standard Zener Breakdown Voltage Range – 6.8 to 200 V
•Peak Power – 600 Watts @ 1 ms
•ESD Rating of Class 3 (>16 KV) per Human Body Model
•Maximum Clamp Voltage @ Peak Pulse Current
•Low Leakage < 5 µA Above 10 V
•UL 497B for Isolated Loop Circuit Protection
•Response Time is Typically < 1 ns
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
LEADS: Modified L–Bend providing more contact area to bond pads
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
MAXIMUM RATINGS
Please See the Table on the Following Page
*Please see P6SMB11CAT3 to P6SMB91CAT3 for Bidirectional devices.
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
5.8–171 VOLTS
600 WATT PEAK POWER
Devices listed in
bold, italic
are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
Device Package Shipping
ORDERING INFORMATION
P6SMBxxxAT3 SMB 2500/Tape & Reel
SMB
CASE 403A
PLASTIC
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Cathode Anode
Y = Year
WW = Work Week
xxxA = Specific Device Code
= (See Table on Page 3)
YWW
xxxA
MARKING DIAGRAM
†The “T3” suffix refers to a 13 inch reel.
Uni–Directional TVS
IPP
IF
V
I
IR
IT
VRWM
VCVBR VF
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MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation (Note 1.) @ TL = 25°C, Pulse Width = 1 ms PPK 600 W
DC Power Dissipation @ TL = 75°C
Measured Zero Lead Length (Note 2.)
Derate Above 75°C
Thermal Resistance from Junction to Lead
PD
RJL
3.0
40
25
W
mW/°C
°C/W
DC Power Dissipation (Note 3.) @ TA = 25°C
Derate Above 25°C
Thermal Resistance from Junction to Ambient
PD
RJA
0.55
4.4
226
W
mW/°C
°C/W
Forward Surge Current (Note 4.) @ TA = 25°C IFSM 100 A
Operating and Storage Temperature Range TJ, Tstg –65 to +150 °C
1. 10 X 1000 s, non–repetitive
2. 1″ square copper pad, FR–4 board
3. FR–4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, VF = 3.5 V Max. @
IF (Note 4) = 30 A) (Note 5.)
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VCClamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IRMaximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
ITTest Current
VBR Maximum Temperature Coefficient of VBR
IFForward Current
VFForward Voltage @ IF
5. 1/2 sine wave or equivalent, PW = 8.3 ms, non–repetitive
duty cycle
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ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)
VRWM
Breakdown Voltage VC @ IPP (Note 8.)
Device
V
RWM
(Note 6.) IR @ VRWM VBR Volts (Note 7.) @ ITVCIPP VBR
Device
D
ev
i
ce
Marking Volts µAMin Nom Max mA Volts Amps %/°C
P6SMB6.8AT3
P6SMB7.5AT3
P6SMB8.2AT3
P6SMB9.1AT3
6V8A
7V5A
8V2A
9V1A
5.8
6.4
7.02
7.78
1000
500
200
50
6.45
7.13
7.79
8.65
6.8
7.51
8.2
9.1
7.14
7.88
8.61
9.55
10
10
10
1
10.5
11.3
12.1
13.4
57
53
50
45
0.057
0.061
0.065
0.068
P6SMB10AT3
P6SMB11AT3
P6SMB12AT3
P6SMB13AT3
10A
11A
12A
13A
8.55
9.4
10.2
11.1
10
5
5
5
9.5
10.5
11.4
12.4
10
11.05
12
13.05
10.5
11.6
12.6
13.7
1
1
1
1
14.5
15.6
16.7
18.2
41
38
36
33
0.073
0.075
0.078
0.081
P6SMB15AT3
P6SMB16AT3
P6SMB18AT3
P6SMB20AT3
15A
16A
18A
20A
12.8
13.6
15.3
17.1
5
5
5
5
14.3
15.2
17.1
19
15.05
16
18
20
15.8
16.8
18.9
21
1
1
1
1
21.2
22.5
25.2
27.7
28
27
24
22
0.084
0.086
0.088
0.09
P6SMB22AT3
P6SMB24AT3
P6SMB27AT3
P6SMB30AT3
22A
24A
27A
30A
18.8
20.5
23.1
25.6
5
5
5
5
20.9
22.8
25.7
28.5
22
24
27.05
30
23.1
25.2
28.4
31.5
1
1
1
1
30.6
33.2
37.5
41.4
20
18
16
14.4
0.092
0.094
0.096
0.097
P6SMB33AT3
P6SMB36AT3
P6SMB39AT3
P6SMB43AT3
33A
36A
39A
43A
28.2
30.8
33.3
36.8
5
5
5
5
31.4
34.2
37.1
40.9
33
.05
36
39
.05
43.05
34.7
37.8
41
45.2
1
1
1
1
45.7
49.9
53.9
59.3
13.2
12
11.2
10.1
0.098
0.099
0.1
0.101
P6SMB47AT3
P6SMB51AT3
P6SMB56AT3
P6SMB62AT3
47A
51A
56A
62A
40.2
43.6
47.8
53
5
5
5
5
44.7
48.5
53.2
58.9
47.05
51.05
56
62
49.4
53.6
58.8
65.1
1
1
1
1
64.8
70.1
77
85
9.3
8.6
7.8
7.1
0.101
0.102
0.103
0.104
P6SMB68AT3
P6SMB75AT3
P6SMB82AT3
P6SMB91AT3
68A
75A
82A
91A
58.1
64.1
70.1
77.8
5
5
5
5
64.6
71.3
77.9
86.5
68
75.05
82
91
71.4
78.8
86.1
95.5
1
1
1
1
92
103
113
125
6.5
5.8
5.3
4.8
0.104
0.105
0.105
0.106
P6SMB100AT3
P6SMB110AT3
P6SMB120AT3
P6SMB130AT3
100A
110A
120A
130A
85.5
94
102
111
5
5
5
5
95
105
114
124
100
110.5
120
130.5
105
116
126
137
1
1
1
1
137
152
165
179
4.4
4.0
3.6
3.3
0.106
0.107
0.107
0.107
P6SMB150AT3
P6SMB160AT3
P6SMB170AT3
P6SMB180AT3
150A
160A
170A
180A
128
136
145
154
5
5
5
5
143
152
162
171
150.5
160
170
180
158
168
179
189
1
1
1
1
207
219
234
246
2.9
2.7
2.6
2.4
0.108
0.108
0.108
0.108
P6SMB200AT3 200A 171 5 190 200 210 1 274 2.2 0.108
6. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level.
7. VBR measured at pulse test current IT at an ambient temperature of 25°C.
8. Surge current waveform per Figure 2 and derate per Figure 3.
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P , PEAK POWER (kW)
P
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 2
tP
, PULSE WIDTH
1
10
100
0.1 µs1 µs10 µs 100 µs1 ms 10 ms
0.1
Figure 1. Pulse Rating Curve
01234
0
50
100
t, TIME (ms)
VALUE (%)
HALF VALUE - IPP
2
PEAK VALUE - IPP
tr≤ 10 µs
Figure 2. Pulse Waveform
TYPICAL PROTECTION CIRCUIT
Vin VL
Zin
LOAD
Figure 3. Pulse Derating Curve
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ T
A= 25 C°
100
80
60
40
20
00 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
120
140
160
tP
PULSE WIDTH (tP) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF IPP
.
VBR, BREAKDOWN VOLTAGE (VOLTS)
Figure 4. Capacitance versus Breakdown
Voltage
0.1 1 10 100 1000
10
100
1000
10,000
C, CAPACITANCE (pF)
MEASURED @
ZERO BIAS
MEASURED @ VRWM
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APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 5.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 6. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMB series have
a very good response time, typically < 1 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,
minimum lead lengths and placing the suppressor device as
close as possible to the equipment or components to be
protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to b e
in error as the 10 ms pulse has a higher derating factor than
the 10 µs pulse. However, when the derating factor for a
given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
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VL
V
Vin
Vin (TRANSIENT) VL
td
V
Vin (TRANSIENT)
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
tD = TIME DELAY DUE TO CAPACITIVE EFFECT
t t
Figure 5. Figure 6.
Figure 7. Typical Derating Factor for Duty Cycle
DERATING FACTOR
1 ms
10 µs
1
0.7
0.5
0.3
0.05
0.1
0.2
0.01
0.02
0.03
0.07
100 µs
0.1 0.2 0.5 2 5 10 501 20 100
D, DUTY CYCLE (%)
PULSE WIDTH
10 ms
UL RECOGNITION
The entire series has Underwriters Laboratory
Recognition for the classification of protectors (QVGV2)
under the UL standard for safety 497B and File #116110.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
including Strike Voltage Breakdown test, Endurance
Conditioning, Temperature test, Dielectric
Voltage-Withstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.
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7
OUTLINE DIMENSIONS
600 Watt Peak Power
Transient Voltage Suppressors – Surface Mounted
SMB
DO–214AA
CASE 403A–03
ISSUE D
SMB Footprint
A
S
DB
J
P
K
C
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.160 0.180 4.06 4.57
B0.130 0.150 3.30 3.81
C0.075 0.095 1.90 2.41
D0.077 0.083 1.96 2.11
H0.0020 0.0060 0.051 0.152
J0.006 0.012 0.15 0.30
K0.030 0.050 0.76 1.27
P0.020 REF 0.51 REF
S0.205 0.220 5.21 5.59
mm
inches
0.085
2.159
0.108
2.743
0.089
2.261
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without further notice to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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For additional information, please contact your local
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P6SMB6.8AT3/D
Surmetic is a trademark of Semiconductor Components Industries, LLC.
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