JFET Amplifiers
P–Channel — Depletion
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Gate Voltage VDG 40 Vdc
Reverse Gate–Source Voltage VGSR 40 Vdc
Forward Gate Current IG(f) 10 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD350
2.8 mW
mW/°C
Junction Temperature Range TJ–65 to +135 °C
Storage Channel Temperature Range Tstg –65 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = 10 µAdc, VDS = 0) 2N5460, 2N5461, 2N5462 V(BR)GSS 40 — — Vdc
Gate Reverse Current
(VGS = 20 Vdc, VDS = 0) 2N5460, 2N5461, 2N5462
(VGS = 30 Vdc, VDS = 0)
(VGS = 20 Vdc, VDS = 0, TA = 100°C) 2N5460, 2N5461, 2N5462
(VGS = 30 Vdc, VDS = 0, TA = 100°C)
IGSS —
—
—
—
5.0
1.0
nAdc
µAdc
Gate–Source Cutoff Voltage 2N5460
(VDS = 15 Vdc, ID = 1.0 µAdc) 2N5461
2N5462
VGS(off) 0.75
1.0
1.8
—
—
—
6.0
7.5
9.0
Vdc
Gate–Source Voltage
(VDS = 15 Vdc, ID = 0.1 mAdc) 2N5460
(VDS = 15 Vdc, ID = 0.2 mAdc) 2N5461
(VDS = 15 Vdc, ID = 0.4 mAdc) 2N5462
VGS 0.5
0.8
1.5
—
—
—
4.0
4.5
6.0
Vdc
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 3 1Publication Order Number:
2N5460/D
2N5460
2N5461
2N5462
CASE 29–11, STYLE 7
TO–92 (TO–226AA)
123
2 DRAIN
1 SOURCE
3
GATE
2N5460 2N5461 2N5462
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic UnitMaxTypMinSymbol
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current 2N5460
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) 2N5461
2N5462
IDSS –1.0
–2.0
–4.0
—
—
—
–5.0
–9.0
–16
mAdc
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance 2N5460
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) 2N5461
2N5462
yfs1000
1500
2000
—
—
—
4000
5000
6000
mhos
Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) yos— — 75 mhos
Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss — 5.0 7.0 pF
Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss — 1.0 2.0 pF
FUNCTIONAL CHARACTERISTICS
Equivalent Short–Circuit Input Noise Voltage
(VDS = 15 Vdc, VGS = 0, f = 100 Hz, BW = 1.0 Hz) en— 60 115 nVHz
Figure 1.
2N5460 2N5461 2N5462
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3
Yfs FORWARD TRANSFER ADMITTANCE ( mhos)Yfs FORWARD TRANSFER ADMITTANCE ( mhos)
DRAIN CURRENT versus GATE
SOURCE VOLTAGE FORWARD TRANSFER ADMITTANCE
versus DRAIN CURRENT
ID, DRAIN CURRENT (mA)
Yfs FORWARD TRANSFER ADMITTANCE ( mhos)
4.0 4000
0 0.2
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 1. VGS(off) = 2.0 Volts
1.0
ID, DRAIN CURRENT (mA)
3.5
ID, DRAIN CURRENT (mA)
10 10000
0 1.0
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 2. VGS(off) = 4.0 Volts
ID, DRAIN CURRENT (mA)
ID, DRAIN CURRENT (mA)
16 10000
0
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 3. VGS(off) = 5.0 Volts
ID, DRAIN CURRENT (mA)
Figure 4. VGS(off) = 2.0 Volts
Figure 5. VGS(off) = 4.0 Volts
Figure 6. VGS(off) = 5.0 Volts
3.0
2.5
2.0
1.5
1.0
0.5
00.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VDS = 15 V
200
300
500
700
1000
2000
3000
0.2 0.3 0.5 0.7 2.0 3.0 4.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
00.5 1.5 2.0 2.5 3.0 3.5 4.0 500
700
1000
2000
3000
5000
7000
0.5 0.7 1.0 2.0 3.0 5.0 7.0
14
12
10
8.0
6.0
4.0
2.0
01.0 2.0 3.0 8.04.0 5.0 6.0 7.0 500
700
1000
2000
3000
5000
7000
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
TA = -55°C
25°C
125°C
VDS = 15 V
f = 1.0 kHz
VDS = 15 V
TA = -55°C
25°C
125°C
VDS = 15 V
TA = -55°C
25°C
125°C
VDS = 15 V
f = 1.0 kHz
VDS = 15 V
f = 1.0 kHz
2N5460 2N5461 2N5462
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4
1000
0.1 0.2
ID, DRAIN CURRENT (mA)
Figure 7. Output Resistance
versus Drain Current
10 0.5 1.0 2.0 5.0 10
ross, OUTPUT RESISTANCE (k ohms)
C, CAPACITANCE (pF)
10
0
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 8. Capacitance versus
Drain–Source Voltage
0
NF, NOISE FIGURE (dB)
10
RS, SOURCE RESISTANCE (k Ohms)
Figure 9. Noise Figure versus
Source Resistance
0
Figure 10. Equivalent Low Frequency Circuit
20
30
50
70
100
200
300
500
700
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10 20 30 40
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
1.0 10 100 1000 10,000
NOTE:
1. Graphical data is presented for dc conditions. Tabular
data i s given for pulsed conditions (Pulse Width = 630 ms,
Duty Cycle = 10%).
*Cosp is Coss in parallel with Series Combination of Ciss and Crss.
vi
Crss
Ciss ross Coss | yfs | vi
COMMON SOURCE
y PARAMETERS FOR FREQUENCIES
BELOW 30 MHz
yis = jω Ciss
yos = jω Cosp * + 1/ross
yfs = yfs |
yrs = -jω Crss
VDS = 15 V
f = 1.0 kHz
IDSS = 3.0 mA
6.0 mA
10 mA
f = 1.0 MHz
VGS = 0
Ciss
Coss
Crss
VDS = 15 V
VGS = 0
f = 100 Hz
2N5460 2N5461 2N5462
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5
PACKAGE DIMENSIONS
CASE 29–11
ISSUE AL
TO–92 (TO–226AA)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X–X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 --- 12.70 ---
L0.250 --- 6.35 ---
N0.080 0.105 2.04 2.66
P--- 0.100 --- 2.54
R0.115 --- 2.93 ---
V0.135 --- 3.43 ---
1
STYLE 7:
PIN 1. SOURCE
2. DRAIN
3. GATE
2N5460 2N5461 2N5462
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6
Notes
2N5460 2N5461 2N5462
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7
Notes
2N5460 2N5461 2N5462
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8
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