Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor's system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDD3706/FDU3706 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package. * 50 A, 20 V Applications * Fast Switching * DC/DC converter * High performance trench technology for extremely RDS(ON) = 9 m @ VGS = 10 V RDS(ON) = 11 m @ VGS = 4.5 V RDS(ON) = 16 m @ VGS = 2.5 V * Low gate charge (16 nC) * Motor Drives low RDS(ON) D G D-PAK TO-252 (TO-252) I-PAK (TO-251AA) G D S Absolute Maximum Ratings Symbol G S o TA=25 C unless otherwise noted Parameter Ratings Units 20 V 12 V 50 A VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Continuous Drain Current @TC=25C (Note 3) @TA=25C (Note 1a) 14.7 Pulsed (Note 1a) 60 (Note 3) 44 @TA=25C (Note 1a) 3.8 @TA=25C (Note 1b) PD Power Dissipation TJ, TSTG @TC=25C W 1.6 Operating and Storage Junction Temperature Range -55 to +175 C Thermal Characteristics RJC Thermal Resistance, Junction-to-Case (Note 1) 3.4 C/W RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 45 C/W RJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 C/W Package Marking and Ordering Information Device Marking Device Package FDD3706 FDD3706 FDU3706 FDU3706 2002 Fairchild Semiconductor Corp. Reel Size Tape width Quantity D-PAK (TO-252) 13'' 16mm 2500 units I-PAK (TO-251) Tube N/A 75 FDD3706/FDU3706 Rev. 1.3 FDD3706/FDU3706 March 2015 Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) EAS Drain-Source Avalanche Energy IAS Drain-Source Avalanche Current Single Pulse, VDD = 10V, ID=7A 60 mJ 7 A Off Characteristics BVDSS BVDSS TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, Zero Gate Voltage Drain Current VDS = 16 V, IGSSF Gate-Body Leakage, Forward VGS = 12 V, IGSSR Gate-Body Leakage, Reverse VGS = -12 V On Characteristics VGS(th) VGS(th) TJ RDS(on) ID = 250 A 20 V ID = 250 A,Referenced to 25C 13 mV/C 1 A VDS = 0 V 100 nA VDS = 0 V -100 nA 1 -3.5 1.5 V mV/C 7.5 8 11 12.6 9 11 16 19 m VGS = 0 V (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient VDS = VGS, ID = 250 A ID = 250 A,Referenced to 25C Static Drain-Source On-Resistance ID(on) On-State Drain Current VGS = 10 V, ID = 16.2 A VGS = 4.5 V, ID = 14.7 A VGS = 2.5 V, ID = 12.2 A VGS = 4.5 V, ID = 14.7 A,TJ = 125C VGS = 4.5 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 14.7 A VDS = 10 V, f = 1.0 MHz V GS = 0 V, VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 0.5 30 A 65 S 1882 pF 430 pF 201 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Qg Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 2) 11 20 ns 15 27 ns 35 56 ns Turn-Off Fall Time 16 29 ns Total Gate Charge 16 23 nC VDS = 10V, VGS = 4.5 V ID = 14.7 A, 3.7 nC 4 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 3.2 A (Note 2) 0.7 3.2 A 1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA = 40C/W when mounted on a 2 1in pad of 2 oz copper b) RJA = 96C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD3706/FDU3706 Rev. 1.3 FDD3706/FDU3706 Electrical Characteristics FDD3706/FDU3706 Typical Characteristics 100 1.8 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS=4.5V 3.5V 80 2.5V 60 40 2.0V 20 1.6 VGS = 2.5V 1.4 3.0V 1.2 3.5V 0 1 2 3 4 0 5 20 40 60 80 100 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.6 0.03 ID = 14.7A VGS = 4.5V RDS(ON), ON-RESISTANCE (OHM) R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V 0.8 0 1.4 1.2 1 0.8 0.6 I D = 7.4A 0.025 0.02 TA = 125 oC 0.015 TA = 25oC 0.01 0.005 -50 -25 0 25 50 75 100 125 150 175 1 2 o TJ , JUNCTION TEMPERATURE ( C) 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature Figure 4. On-Resistance Variation with Gate-to-Source Voltage 100 60 TA =-55o C VGS = 0V 25oC IS, REVERSE DRAIN CURRENT (A) VDS = 5V 50 I D, DRAIN CURRENT (A) 4.0V 1 125oC 40 30 20 10 10 o TA = 125 C 1 o 25 C 0.1 o -55 C 0.01 0.001 0.0001 0 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 3 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDD3706/FDU3706 Rev. 1.3 FDD3706/FDU3706 Typical Characteristics 2500 VDS = 5V ID = 14.7A CISS 2000 8 15V 6 4 1500 1000 COSS 2 500 0 0 CRSS 0 10 20 30 0 40 5 10 Figure 7. Gate Charge Characteristics 20 Figure 8. Capacitance Characteristics 100 P(pk), PEAK TRANSIENT POWER (W) 1000 100s 100 RDS(ON) LIMIT 1ms 10ms 100ms 1s 10 10s 1 VGS = 4.5V SINGLE PULSE o RJA = 96 C/W TA = 25oC 0.1 0.01 0.01 DC 0.1 1 10 SINGLE PULSE RJA = 96C/W TA = 25C 80 60 40 20 0 0.01 100 0.1 1 10 100 1000 t1 , TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 15 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg , GATE CHARGE (nC) ID, DRAIN CURRENT (A) f = 1MHz VGS = 0 V 10V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 Figure 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 R JA (t) = r(t) * R JA R JA = 96 C/W 0.1 0.05 0.02 0.01 P(pk) 0.01 t1 t2 0.001 0.0001 0.0001 T J - T A = P * RJA (t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.01 0.1 1 10 100 1000 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD3706/FDU3706 Rev. 1.3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com (c) Semiconductor Components Industries, LLC N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com