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2002 Fairchild Semiconductor Corp. FDD3706/FDU3706 Rev. 1.3
FDD3706/FDU3706
20V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) , fast switching speed and
extremely low RDS(ON) in a small package.
Applications
•DC/DC converter
•Motor Drives
Features
•50 A, 20 V RDS(ON) = 9 mΩ @ VGS = 10 V
RDS(ON) = 11 mΩ @ VGS = 4.5 V
RDS(ON) = 16 mΩ @ VGS = 2.5 V
•Low gate charge (16 nC)
•Fast Switching
•High performance trench technology for extremely
low RDS(ON)
G
TO-252
D-PAK
(TO-252) GDS
I-PAK
(TO-251AA)
S
G
D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 20 V
VGSS Gate-Source Voltage ± 12 V
ID Continuous Drain Current @TC=25°C (Note 3) 50 A
@TA=25°C (Note 1a) 14.7
Pulsed (Note 1a) 60
Power Dissipation @TC=25°C (Note 3) 44
@TA=25°C (Note 1a) 3.8
PD
@TA=25°C (Note 1b) 1.6
W
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 °C
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case (Note 1) 3.4 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 45 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape width Quantity
FDD3706 FDD3706 D-PAK (TO-252) 13’’ 16mm 2500 units
FDU3706 FDU3706 I-PAK (TO-251) Tube N/A 75
FDD3706/FDU3706
March 2015
FDD3706/FDU3706 Rev. 1.3
D
R
P
DS(ON)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
EAS Drain-Source Avalanche Energy Single Pulse, VDD = 10V, ID=7A 60 mJ
IAS Drain-Source Avalanche Current 7 A
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 20 V
∆BVDSS
∆TJ Breakdown Voltage Temperature
Coefficient ID = 250 µA,Referenced to 25°C 13 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA
IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA
IGSSR Gate–Body Leakage, Reverse VGS = –12 V VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.5 1 1.5 V
∆VGS(th)
∆TJ Gate Threshold Voltage
Temperature Coefficient ID = 250 µA,Referenced to 25°C –3.5 mV/°C
RDS(on) Static Drain–Source
On–Resistance VGS = 10 V, ID = 16.2 A
VGS = 4.5 V, ID = 14.7 A
VGS = 2.5 V, ID = 12.2 A
VGS = 4.5 V, ID = 14.7 A,TJ = 125°C
7.5
8
11
12.6
9
11
16
19
mΩ
ID(on) On–State Drain Current VGS = 4.5 V, VDS = 5 V 30 A
gFS Forward Transconductance VDS = 5 V, ID = 14.7 A 65 S
Dynamic Characteristics
Ciss Input Capacitance 1882 pF
Coss Output Capacitance 430 pF
Crss Reverse Transfer Capacitance
VDS = 10 V, V GS = 0 V,
f = 1.0 MHz 201 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 11 20 ns
tr Turn–On Rise Time 15 27 ns
td(off) Turn–Off Delay Time 35 56 ns
tf Turn–Off Fall Time
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6 Ω
16 29 ns
Qg Total Gate Charge 16 23 nC
Qgs Gate–Source Charge 3.7 nC
Qgd Gate–Drain Charge
VDS = 10V, ID = 14.7 A,
VGS = 4.5 V 4 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 3.2 A
VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 3.2 A (Note 2) 0.7 1.2 V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 40°C/W when mounted on a
1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD3706/FDU3706
FDD3706/FDU3706 Rev. 1.3
Typical Characteristics
0
20
40
60
80
100
012345
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
3.5V
VGS=4.5V
2.5V
3.0V
2.0V
0.8
1
1.2
1.4
1.6
1.8
020 40 60 80 100
ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 2.5V
4.0V
3.5V 4.5V
3.0V
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.6
0.8
1
1.2
1.4
1.6
-50 -25 025 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID = 14.7A
VGS = 4.5V
0.005
0.01
0.015
0.02
0.025
0.03
12345
VGS, GATE TO SOURCE VOLTAGE (V)
RDS(ON), ON-RESISTANCE (OHM)
ID = 7.4A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation
withTemperature Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
0
10
20
30
40
50
60
11.5 22.5 3
VGS, GATE TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
TA =-55oC25oC
125oC
VDS = 5V
0.0001
0.001
0.01
0.1
1
10
100
00.2 0.4 0.6 0.8 11.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
IS, REVERSE DRAIN CURRENT (A)
TA = 125oC
25oC
-55oC
VGS = 0V
Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD3706/FDU3706
FDD3706/FDU3706 Rev. 1.3
Typical Characteristics
0
2
4
6
8
10
010 20 30 40
Qg, GATE CHARGE (nC)
VGS, GATE-SOURCE VOLTAGE (V)
ID = 14.7A VDS = 5V
15V
10V
0
500
1000
1500
2000
2500
0 5 10 15 20
VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
CISS
CRSS
COSS
f = 1MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics
0.01
0.1
1
10
100
1000
0.01 0.1 110 100
VDS, DRAIN-SOURCE VOLTAGE (V)
ID
, DRAIN CURRENT (A)
DC
1s
100ms
RDS(ON) LIMIT
VGS = 4.5V
SINGLE PULSE
RθJA = 96oC/W
TA = 25oC
10ms
1ms
100µs
10s
0
20
40
60
80
100
0.01 0.1 110 100 1000
t1, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJA = 96°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum
Power Dissipation
0.0001
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
RθJA(t) = r(t) * RθJA
RθJA = 96 °C/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD3706/FDU3706
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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