MOTORCLA SC XSTRS/R F MAXIMUM RATINGS 12E D 5 6367254 0084321 & i T- 27-09 2N3307 2N3308 CASE 20-03, STYLE 10 TO-72 (TO-206AF) Rating Symbo! | 2N3307 | 2N3308 Unit : - 3 Collector Collector-Emitter Voltage VcEO 35 25 Vde Collector-Emitter Voltage VcCES 40 30 Vde 3 Collector-Base Voltage VcBO 40 30 Vde Base Emitter-Base Voltage VEBO 3.0 Vde Collector Current Continuous Ic 50 mAdc 3%2 at 1 Emitter Total Device Dissipation @ Ta = 26C Pp 200 mW Derate above 25C 1.14 mWwrc Total Davice Dissipation @ Tc = 25C Pp 300 mw GENERAL PURPOSE Derate above 25C 1.71 mWwrc TRANSISTORS Operating and Storage Junction Ty. Tstg 65 to +200 c Temperature Range PNP SILICON ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic | Symbol! | Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BRICEO Vde (Ic = 2.0 mAde, Ip = 0) 2N3307 35 - 2N3308 25 _ Collector-Emitter Breakdown Voltage ViBRICES Vde (lc = 10 pAdc, Vg = 0) 2N3307 40 - 2N3308 30 - Collector-Base Breakdown Voltage(1) V(BRICBO Vde (Ie = 10 pAds, IE = 0) 2N3307 40 _ 2N3308 30 - Emitter-Base Breakdown Voltage V(BR)EBO 3.0 - Vde (le = 10 pAde, Ic = 0) Collector Cutoff Current \cao pAdc (Veg = 15 Vde) _ 0.010 (Veg = 15 Vde, T = 150C) 2N3307 - 3.0 ON CHARACTERISTICS DC Current Gain hee _- (Voce = 10 Vde, I = 2.0 mAde) 2N3307 40 250 2N3308 25 250 Collector-Emitter Saturation Voltage VCE(sat) - 0.4 Vde {I = 3.0 mAde, Ip = 0.6 mAdc) Base-Emitter Saturation Voltage VBE(sat) _ 1.0 Vde (I = 3.0 mAde, lg = 0.6 mAdc SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fT 300 1200 MHz (Vce = 10 Vde, Ic = 2.0 mAde, f = 100 MHz Maximum Frequency of Operation fmax Typical MHz (VcE = 10 Vde, Ic = 2.0 mAdc) 2000 Output Capacitance Cobo pF (Vop = 10 Vde, le = 0, f = 0.1 MHz 2N3307 - 1.3 2N3308 ~ 1.6 Small-Signal Current Gain hte - (VcgE = 10 Vde, Ic = 2.0 mAde, f = 1 kHz) 2N3307 40 250 2N3308 25 250 Collector Base Time Constant th'C> ps (Veg = 10 Vde, Ic = 2.0 mAde, f = 31.8 MHz) 2N3307 2.0 15 2N3308 2.0 20 MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 3-110 ae, = MOTORCLA SC XSTRS/R F 1ZE D | 6367254 O08b32e & | 2N3307, 2N3308 TATOO q ~ - e ELECTRICAL CHARACTERISTICS (continued) (Ta = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit Noise Figure NF dB (Vcg = 10 Vde, I = 2.0 mAdc, f = 200 MHz) 2N3307 _ 46 2N3308 - 6.0 SWITCHING CHARACTERISTICS Power Gain(2) Ge 7 | (VcE = 10 Vde, tc = 2.0 mAde, f = 200 MHz) Power Gain (AGC}(2} Ge dB (Vcg = 5.0 Vde, I = 20 mAde, f = 200 MHz} 2N3307 - 0 2N3308 - - (1) Cope is measured in guarded circuit such that the can capacitance is not included. (2) AGC is obtained by increasing Ic. The circuit remains adjusted for Vcg = 10 Vde, t = ~-2 mAdc operation, FIGURE 1 COMMON EMITTER AVERAGE SMALL POWER FIGURE 2 NOISE FIGURE versus FREQUENCY GAIN & NOISE FIGURE versus COLLECTOR CURRENT Veg = 10 Vde women TUNED AT be * 92 mAdc ONLY. 5 {==200 MHz TUNED AT EACH TEST CURRERT. z 2 = Vogt 15 Vdc 2 a = Voe# 5 = a 2 5 = 2 z 3 8 3 3 z = uw =z rc -) 2 a 5 = -i2 30 70-100 200300 500 Te, COLLECTOR CURRENT (mAde) 1, FREQUENCY ( MHz} MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 3-111