© 2008 IXYS CORPORATION, All rights reserved
IXGH24N170
IXGT24N170
Features
zInternational standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
zHigh current handling capability
zMOS Gate turn-on
- drive simplicity
zRugged NPT structure
zMolding epoxies meet UL 94 V-0
flammability classification
Applications
zCapacitor discharge & pulser circuits
zAC motor speed control
zDC servo and robot drives
zDC choppers
zUninterruptible power supplies (UPS)
zSwitched-mode and resonant-mode
power supplies
Advantages
zHigh power density
zSuitable for surface mounting
zEasy to mount with 1 screw,
(isolated mounting screw hole)
DS98994A(09/08)
High Voltage
IGBT
Advance Technical Information
VCES = 1700V
IC25 = 50A
VCE(sat) ≤≤
≤≤
≤ 3.3V
tfi(typ) = 250ns
Symbol Test Conditions Maximum Ratings
VCES TC = 25°C to 150°C 1700 V
VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V
VGES Continuous ± 20 V
VGEM Transient ± 30 V
IC25 TC = 25°C 50 A
IC90 TC = 90°C 24 A
ICM TC = 25°C, 1ms 150 A
SSOA VGE = 15V, TVJ = 125°C, RG = 5Ω ICM = 50 A
(RBSOA) Clamped inductive load @ 0.8 • VCES
tSC VGE = 15V, TVJ = 125°C, VCE = 1000V 10 μs
(SCSOA) RG = 5Ω, non repetitive
PCTC = 25°C 250 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from case for 10s 300 °C
TSOLD Plastic body for 10 seconds 260 °C
MdMounting torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
G = Gate C = Collector
E = Emitter TAB = Collector
TO-247 (IXGH)
GCEC (TAB)
TO-268 (IXGT)
GEC (TAB)
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVCES IC = 250μA, VGE = 0V 1700 V
VGE(th) IC = 250μA, VCE = VGE 3.0 5.0 V
ICES VCE = 0.8 • VCES 50 μA
VGE = 0V TJ = 125°C 500 μA
IGES VCE = 0V, VGE = ± 20V ±100 nA
VCE(sat) IC = IC90, VGE = 15V, Note 1 2.5 3.3 V
TJ = 125°C 3.0
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH24N170
IXGT24N170
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs IC = IC90, VCE = 10V, Note 1 18 25 S
IC(ON) VCE = 10V, VGE = 10V 100 A
Cies 2400 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 120 pF
Cres 33 pF
Qg 106 nC
Qge IC = IC90, VGE = 15V, VCE = 0.5 • VCES 18 nC
Qgc 32 nC
td(on) 42 ns
tri 39 ns
td(off) 200 400 ns
tfi 250 500 ns
Eoff 8 12 mJ
td(on) 50 ns
tri 55 ns
Eon 2.0 mJ
td(off) 200 ns
tfi 360 ns
Eoff 12 mJ
RthJC 0.50 °C/W
RthCS (TO-247) 0.25 °C/W
Inductive load, TJ = 25°C
IC = IC25, VGE = 15V
VCE = 0.8 • VCES, RG = Roff = 5Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Inductive load, TJ = 125°C
IC = IC25, VGE = 15V
VCE = 0.8 • VCES, RG = Roff = 5Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Min Recommended Footprint
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
Terminals: 1 - Gate 2 - Drain
1 2 3
TO-268 Outline
Terminals: 1 - Gate 2 - Drain
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