VS-8EWS12SLHM3 www.vishay.com Vishay Semiconductors High Voltage Surface Mountable Input Rectifier Diode, 8 A FEATURES Base cathode + 2 * Glass passivated pellet chip junction * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * AEC-Q101 qualified * Meets JESD 201 class 2 whisker test * Flexible solution for reliable AC power rectification * High surge, low VF rugged blocking diode for DC charging stations * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 3 1 DPAK (TO-252AA) 1 Anode - 3 - Anode PRIMARY CHARACTERISTICS APPLICATIONS IF(AV) 8A VR 800 V, 1200 V * On-board and off-board EV / HEV battery chargers * Renewable energy inverters VF at IF 1.1 V IFSM 150 A DESCRIPTION TJ max. 150 C Package DPAK (TO-252AA) Circuit configuration Single The VS-8EWS12SLHM3 rectifier high voltage series has been optimized for very low forward voltage drop, with moderate leakage. The high reverse voltage range available allows design of input stage primary rectification with outstanding voltage surge capability. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE NEMA FR-4 or G10 glass fabric-based epoxy with 4 oz. (140 m) copper UNITS 1.2 1.6 Aluminum IMS, RthCA = 15 C/W 2.5 2.8 Aluminum IMS with heatsink, RthCA = 5 C/W 5.5 6.5 CHARACTERISTICS VALUES UNITS 8 A A Note * TA = 55 C, TJ = 125 C, footprint 300 mm2 MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) Sinusoidal waveform VRRM 1200 V IFSM 150 A VF 8 A, TJ = 25 C 1.10 V -55 to +150 C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 C mA 1200 1300 TJ VOLTAGE RATINGS PART NUMBER VS-8EWS12SLHM3 Revision: 22-Feb-18 Document Number: 96118 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWS12SLHM3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t TEST CONDITIONS VALUES TC = 105 C, 180 conduction half sine wave UNITS 8 10 ms sine pulse, rated VRRM applied 125 10 ms sine pulse, no voltage reapplied 150 A 10 ms sine pulse, rated VRRM applied 78 10 ms sine pulse, no voltage reapplied 110 t = 0.1 ms to 10 ms, no voltage reapplied 1100 A2s VALUES UNITS A2s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop TEST CONDITIONS VFM Forward slope resistance 8 A, TJ = 25 C rt Threshold voltage TJ = 150 C VF(TO) Maximum reverse leakage current TJ = 25 C IRM V 20 m 0.82 V 0.05 VR = rated VRRM TJ = 150 C 1.1 mA 0.50 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC VALUES UNITS -55 to +150 C DC operation 2.5 C/W Typical thermal resistance, junction to ambient (PCB mount) RthJA (1) 62 Approximate weight Marking device 1 g 0.03 oz. Case style DPAK (TO-252AA) 8EWS12SH Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W 150 150 140 130 O Conduction angle 120 110 100 30 60 90 90 120 RthJC (DC) = 2.5 C/W Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) RthJC (DC) = 2.5 C/W 140 130 O Conduction period 120 110 30 60 100 90 120 180 180 DC 90 80 0 2 4 6 8 10 Average Forward Current (A) Fig. 1 - Current Rating Characteristics 12 0 2 4 6 8 10 12 14 16 18 Average Forward Current (A) Fig. 2 - Current Rating Characteristics Revision: 22-Feb-18 Document Number: 96118 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWS12SLHM3 www.vishay.com 140 180 120 90 60 30 14 12 120 10 RMS limit 8 6 O Conduction angle 4 TJ = 150 C 2 110 100 90 80 70 60 50 40 30 0 0 2 4 6 8 1 10 Average Forward Current (A) 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 3 - Forward Power Loss Characteristics 160 20 DC 180 120 90 60 30 18 16 14 12 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = TJ max. No voltage reapplied Rated Vrrm reapplied 140 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) At any rated load condition and with rated Vrrm applied following surge. Initial TJ = 150 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 130 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) 16 Vishay Semiconductors RMS limit 10 8 O 6 Conduction period 4 120 100 80 60 40 TJ = 150 C 2 20 0.01 0 0 2 4 6 8 10 14 12 16 0.1 1 10 Pulse Train Duration (s) Fig. 4 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous Forward Current (A) Average Forward Current (A) 100 TJ = 25 C TJ = 150 C 10 1 0 0.5 1.0 1.5 2.0 2.5 3.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Revision: 22-Feb-18 Document Number: 96118 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWS12SLHM3 www.vishay.com Vishay Semiconductors ZthJC - Transient Thermal Impedance (C/W) 10 Steady state value (DC operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 0.1 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- 8 E W S 12 S L H M3 1 2 3 4 5 6 7 8 9 10 1 - Vishay Semiconductors product 2 - Current rating (8 = 8 A) 3 - Circuit configuration: E = single 4 - Package: W = DPAK (TO-252AA) 5 - Type of silicon: S = standard recovery rectifier 6 - Voltage code x 100 = VRRM 7 - S = surface mountable 8 - L = tape and reel (left oriented), for different orientation contact factory 9 - H = AEC-Q101 qualified 10 - Environmental digit: 12 = 1200 V M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-8EWS12SLHM3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 3000 3000 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95519 Part marking information www.vishay.com/doc?95518 Packaging information www.vishay.com/doc?96495 Revision: 22-Feb-18 Document Number: 96118 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D-PAK (TO-252AA) DIMENSIONS in millimeters and inches SYMBOL MILLIMETERS MIN. INCHES MAX. MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 A2 0.03 0.127 0.001 0.005 H 9.65 10.41 0.380 0.410 1.40 1.78 0.055 0.070 b 0.71 0.88 0.028 0.035 L b1 0.76 1.14 0.030 0.045 e b2 5.23 5.44 0.206 0.214 e1 C 0.46 0.58 0.018 0.023 L1 2.28 BSC 4.57 BSC 0.64 1.02 NOTES 0.09 BSC 0.18 BSC 0.025 0.040 C1 0.46 0.58 0.018 0.023 L2 0.89 1.27 0.035 0.050 D 5.97 6.22 0.235 0.2455 L3 1.15 1.52 0.040 0.060 D1 4.32 4.45 0.170 0.175 E 6.48 6.73 0.255 0.2655 E1 4.49 5.50 0.177 0.217 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension uncontrolled in L3 only for reference (3) Dimension D1, E1, L2 and b2 establish a minimum mounting surface for thermal pad (4) Dimensions D and E do not include mold flash. (5) Outline conforms to JEDEC outline TO-252AA Revision: 18-Jun-12 Document Number: 95519 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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