MMBF170LT1, MVBF170LT1 Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features * AEC Q101 Qualified - MVBF170LT1 * These Devices are Pb-Free and are RoHS Compliant http://onsemi.com 500 mA, 60 V RDS(on) = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage VDGS 60 Vdc Gate-Source Voltage - Continuous - Non-repetitive (tp 50 ms) VGS VGSM 20 40 Vdc Vpk ID IDM 0.5 0.8 Adc Symbol Max Unit 225 1.8 mW mW/C RqJA 556 C/W TJ, Tstg -55 to +150 C Drain Current - Continuous - Pulsed SOT-23 CASE 318 STYLE 21 N-Channel 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (Note 1.) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature PD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 0.75 0.062 in. 1 2 MARKING DIAGRAM & PIN ASSIGNMENT 3 Drain 6Z MG G Gate 1 2 Source 6Z = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2011 October, 2011 - Rev. 7 1 Publication Order Number: MMBF170LT1/D MMBF170LT1, MVBF170LT1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Max Unit V(BR)DSS 60 - Vdc IGSS - 10 nAdc Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) VGS(th) 0.8 3.0 Vdc Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 200 mA) rDS(on) - 5.0 W ID(off) - 0.5 mA Ciss - 60 pF td(on) - 10 ns td(off) - 10 Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mA) Gate-Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) ON CHARACTERISTICS (Note 1) On-State Drain Current (VDS = 25 Vdc, VGS = 0) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz) SWITCHING CHARACTERISTICS (Note 1) Turn-On Delay Time Turn-Off Delay Time (VDD = 25 Vdc, ID = 500 mA, Rgen = 50 W) Figure 1 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Package Shipping MMBF170LT1G SOT-23 (TO-236) (Pb-Free) 3000 / Tape & Reel MMBF170LT3G SOT-23 (TO-236) (Pb-Free) 10000 / Tape & Reel MVBF170LT1G SOT-23 (TO-236) (Pb-Free) 3000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. +25 V ton td(on) 125 W PULSE GENERATOR 50 W Vin 20 dB 50 W ATTENUATOR 40 pF TO SAMPLING SCOPE 50 W INPUT Vout OUTPUT INVERTED Vout tr 90% 50% Vin 1 MW 90% 10% INPUT 50 W toff tf td(off) 90% 50% 10% PULSE WIDTH (Vin AMPLITUDE 10 VOLTS) Figure 1. Switching Test Circuit Figure 2. Switching Waveform http://onsemi.com 2 MMBF170LT1, MVBF170LT1 TYPICAL ELECTRICAL CHARACTERISTICS TJ = 25C VDS 10 V ID, DRAIN CURRENT (A) 1.0 4.5 V 0.8 4.2 V 0.6 4.0 V 3.8 V 3.6 V 3.4 V 3.2 V 3.0 V 2.8 V 0.4 0.2 0 0 1 2 3 4 5 6 0.6 0.4 TJ = 150C 0.2 0 7 TJ = 25C TJ = -55C 1 2 3 4 5 6 7 VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 3. On-Region Characteristics Figure 4. Transfer Characteristics VGS, GATE-TO-SOURCE VOLTAGE (V) 8 TJ = 25C 7 0.8 15 30 QT 25 12.5 6 5 4 3 VGS = 4.5 V 2 1 0 0.15 VGS = 10 V 0.25 0.35 0.45 0.55 0.65 0.75 10 VGS VDS Qgs 5 Qgd 10 ID = 0.5 A TJ = 25C 2.5 0 0 0.5 1 1.5 ID, DRAIN CURRENT (A) Qg, TOTAL GATE CHARGE (nC) Figure 5. On-Resistance vs. Drain Current and Gate Voltage Figure 6. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 0.24 0.22 0.20 0.18 VGS = 0 V TJ = 25C 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 7. Diode Forward Voltage vs. Current http://onsemi.com 3 20 15 7.5 0.85 8 VDS, DRAIN-TO-SOURCE VOLTAGE (V) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 1.0 5.0 V VGS = 10 V IS, SOURCE CURRENT (A) ID, DRAIN CURRENT (A) 1.2 1.0 5 0 2 MMBF170LT1, MVBF170LT1 2.4 2.2 2.0 VGS = 10 V ID = 200 mA 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -60 -20 20 60 T, TEMPERATURE (C) 100 140 VGS(th), THRESHOLD VOLTAGE (NORMALIZED) r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS 1.2 VDS = VGS ID = 1.0 mA 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -60 Figure 8. Temperature versus Static Drain-Source On-Resistance -20 20 60 T, TEMPERATURE (C) 100 Figure 9. Temperature versus Gate Threshold Voltage http://onsemi.com 4 140 MMBF170LT1, MVBF170LT1 PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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