© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 7
1Publication Order Number:
MMBF170LT1/D
MMBF170LT1, MVBF170LT1
Power MOSFET
500 mA, 60 V
N−Channel SOT−23
Features
•AEC Q101 Qualified − MVBF170LT1
•These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Source Voltage VDSS 60 Vdc
Drain−Gate Voltage VDGS 60 Vdc
Gate−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 50 ms)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current − Continuous
− Pulsed
ID
IDM
0.5
0.8
Adc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1.) TA = 25°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W
Junction and Storage Temperature TJ, Tstg −55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
3
1
2
N−Channel
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM
& PIN ASSIGNMENT
500 mA, 60 V
RDS(on) = 5 W
3
Drain
2 SourceGate 1
http://onsemi.com
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 2 of this data sheet.
6Z MG
G
6Z = Specific Device Code
M = Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
MMBF170LT1, MVBF170LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage (VGS = 0, ID = 100 mA) V(BR)DSS 60 −Vdc
Gate−Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) IGSS −10 nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) VGS(th) 0.8 3.0 Vdc
Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 200 mA) rDS(on) −5.0 W
On−State Drain Current (VDS = 25 Vdc, VGS = 0) ID(off) −0.5 mA
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz)
Ciss −60 pF
SWITCHING CHARACTERISTICS (Note 1)
Turn−On Delay Time (VDD = 25 Vdc, ID = 500 mA, Rgen = 50 W)
Figure 1
td(on) −10 ns
Turn−Off Delay Time td(off) −10
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Device Package Shipping†
MMBF170LT1G SOT−23 (TO−236)
(Pb−Free)
3000 / Tape & Reel
MMBF170LT3G SOT−23 (TO−236)
(Pb−Free)
10000 / Tape & Reel
MVBF170LT1G SOT−23 (TO−236)
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Figure 1. Switching Test Circuit Figure 2. Switching Waveform
20 dB 50 W
ATTENUATOR
PULSE
GENERATOR
50 W
50 W1 MW
Vout
125 W
+25 V
40 pF
Vin
TO SAMPLING
SCOPE
50 W INPUT
PULSE WIDTH
50%
90%
50%
10%
10%
90% 90%
Vin
OUTPUT
INVERTED
INPUT
(Vin AMPLITUDE 10 VOLTS)
Vout
toff
tf
td(off)
ton
td(on) tr
MMBF170LT1, MVBF170LT1
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 3. On−Region Characteristics Figure 4. Transfer Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
7543210
0
0.2
0.4
0.6
0.8
4321
0
0.4
0.8
1.0
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
1.0
1.2
TJ = 25°C
VGS = 10 V
4.2 V
5.0 V
4.5 V
4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
VDS ≥ 10 V
TJ = 25°C
TJ = 150°C
TJ = −55°C
0.2
0.6
Figure 5. On−Resistance vs. Drain Current and
Gate Voltage
ID, DRAIN CURRENT (A)
0.850.550.450.350.250.15
0
1
2
3
4
5
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0.65 0.75
TJ = 25°C
VGS = 4.5 V
VGS = 10 V
Figure 6. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Qg, TOTAL GATE CHARGE (nC)
10.50
0
2.5
5
12.5
15
VGS, GATE−TO−SOURCE VOLTAGE (V)
1.5
10
7.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
30
25
15
10
5
0
ID = 0.5 A
TJ = 25°C
QT
VDS VGS
Qgd
Qgs
Figure 7. Diode Forward Voltage vs. Current
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
0.90.80.70.60.50.4
0
0.04
0.20
IS, SOURCE CURRENT (A)
0.08
0.12
0.16
0.24
VGS = 0 V
TJ = 25°C
6
7
8
2
20
0.02
0.06
0.22
0.10
0.14
0.18
1.00.30.20.1
87656
MMBF170LT1, MVBF170LT1
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4
TYPICAL ELECTRICAL CHARACTERISTICS
rDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
VGS(th), THRESHOLD VOLTAGE (NORMALIZED)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
−60 −20 20 60 100 140 −60 −20 20 60 100 140
T, TEMPERATURE (°C)
Figure 8. Temperature versus Static
Drain−Source On−Resistance
T, TEMPERATURE (°C)
Figure 9. Temperature versus Gate
Threshold Voltage
VGS = 10 V
ID = 200 mA
VDS = VGS
ID = 1.0 mA
MMBF170LT1, MVBF170LT1
http://onsemi.com
5
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q°°°°
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MMBF170LT1/D
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Phone: 81−3−5773−3850
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