1. Product profile
1.1 General description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 500 MHz band. This product is an enhanced ver sion of the
BLF578 using NXP's XR process to provide maximum ruggedness capability in the most
severe applications without compromising the RF performance.
1.2 Features and benefits
Typical pulsed per formance a t freq uency o f 225 MHz, a supply volta ge of 50 V and an
IDq of 40 mA, a tp of 100 s with of 20 %:
Output power = 1400 W
Power gain = 23.5 dB
Efficiency = 69 %
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 500 MHz)
Compliant to Directive 2002/95/EC, rega rd in g Re stri ctio n of Hazard ou s Sub stances
(RoHS)
1.3 Applications
Industrial, scientific and medical applicatio ns
Broadcast transmitter applications
BLF578XR; BLF578XRS
Power LDMOS transistor
Rev. 4 — 12 July 2013 Product data sheet
Table 1. Application information
Test signal f VDS PLGpD
(MHz) (V) (W) (dB) (%)
pulsed RF 225 50 1400 23.5 69
BLF578XR_BLF578XRS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 12 July 2013 2 of 15
NXP Semiconductors BLF578XR; BLF578XRS
Power LDMOS transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLF578XR (SOT539A)
1drain1
2drain2
3gate1
4gate2
5source [1]
BLF578XRS (SOT539B)
1drain1
2drain2
3gate1
4gate2
5source [1]
5
12
43
4
35
1
2sym117
5
12
43
4
35
1
2sym117
Table 3. Ordering information
Type number Package
Name Description Version
BLF578XR - flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads SOT539A
BLF578XRS - earless flanged balanced LDMOST ceramic package;
4 leads SOT539B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 110 V
VGS gate-source voltage 6+11V
Tstg storage temperature 65 +150 C
Tjjunction temperature - 200 C
BLF578XR_BLF578XRS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 12 July 2013 3 of 15
NXP Semiconductors BLF578XR; BLF578XRS
Power LDMOS transistor
5. Thermal characteristics
[1] Tj is the junction temperature.
[2] Rth(j-c) is measured under RF conditions.
[3] See Figure 1.
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from junction to case Tj = 150 C[1][2] 0.11 K/W
Zth(j-c) transient thermal impedance from junction
to case Tj= 150 C; tp=100s;
=20% [3] 0.033 K/W
(1) = 1 %
(2) = 2 %
(3) = 5 %
(4) = 10 %
(5) = 20 %
(6) = 50 %
(7) = 100 % (DC)
Fig 1. Transient thermal impedance from junction to case as a function of puls e
duration
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BLF578XR_BLF578XRS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 12 July 2013 4 of 15
NXP Semiconductors BLF578XR; BLF578XRS
Power LDMOS transistor
6. Characteristics
Table 6. DC characteristics
Tj = 25
C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown
voltage VGS =0V; I
D=5.5mA110--V
VGS(th) gate-source threshold voltage VDS =10 V; I
D= 550 mA 1.25 1.7 2.25 V
VGSq gate-source quiescent voltage VDS =50 V; I
D=20mA 0.8 1.3 1.8 V
IDSS drain leakage current VGS =0V; V
DS =50V--2.8A
IDSX drain cut-off current VGS =V
GS(th) +3.75 V;
VDS =10V -77-A
IGSS gate leakage current VGS =11V; V
DS = 0 V - - 280 nA
RDS(on) drain-source on-state
resistance VGS =V
GS(th) + 3.75 V;
ID=19.25A -0.07-
Table 7. AC characteristics
Tj = 25
C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Crs feedback capacitance VGS =0V; V
DS =50V; f=1MHz - 5.5 - pF
Ciss input capacitance VGS =0V; V
DS =50V; f=1MHz - 414 - pF
Coss output capacitance VGS =0V; V
DS =50V; f=1MHz - 184 - pF
Table 8. RF characteristics
Test signal: pulsed RF; tp = 100
s;
= 20 %; f = 225 MHz; RF performance at VDS =50V;
IDq =40mA; T
case = 25
C; unless otherwise specified; in a class-AB production te st circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gppower gain PL = 1400 W 22 23.5 - dB
RLin input return loss PL = 1400 W - 17 13 dB
Ddrain efficiency PL = 1400 W 65 69 - %
BLF578XR_BLF578XRS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 12 July 2013 5 of 15
NXP Semiconductors BLF578XR; BLF578XRS
Power LDMOS transistor
7. Test information
7.1 Ruggedness in class-AB operation
The BLF578XR and BLF578XRS are capable of withstanding a load mismatch
corresponding to VSWR > 65 : 1 through all phases under the following conditions:
VDS =50V; I
Dq =40mA; P
L= 1400 W pulsed; f = 225 MHz.
7.2 Impedance information
VGS = 0 V; f = 1 MHz.
Fig 2. Output ca pacitance as a function of drain-source voltage; typical values per
section
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Table 9. Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL= 1400 W.
f ZiZL
(MHz) () ()
225 2.36 j2.78 2.45 + j0.86
001aan207
gate 1
gate 2
drain 2
drain 1
ZiZL
BLF578XR_BLF578XRS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 12 July 2013 6 of 15
NXP Semiconductors BLF578XR; BLF578XRS
Power LDMOS transistor
7.3 Test circuit
See Table 10 for a list of components.
Fig 4. Class-AB commo n-s ource production tes t circuit
See Table 10 for a list of components.
Fig 5. Component layout for class-AB produ ction test circuit
001aaj124
C9
C1
C2
C3
C4
R1
R2
C5 C6
C7
C8
T1
C10
C11
C13
C15
C14 C17 C19 C21
T2
C22
C24
C27
C28
C25
C26
R6
R5
L2
L1
C23
C16 C18 C20
R3
R4
C12
BLF578XR_BLF578XRS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 12 July 2013 7 of 15
NXP Semiconductors BLF578XR; BLF578XRS
Power LDMOS transistor
[1] American Technical Ceramics type 100B or capacitor of same quality.
Table 10. List of compon ents
For production test circuit, see Figure 4 and Figure 5.
Printed-Circuit Board (PCB): Rogers 5880;
r = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);
thickness copper plating = 35
m.
Component Description Value Remarks
C1, C2, C11, C12 multilayer ceramic chip capacitor 4.7 F TDK4532X7R1E475Mt020U
C2, C3, C27, C28 multilayer ceramic chip capacitor 100 nF Murata X7R 250 V
C5, C7, C8, C21, C22 multilayer ceramic chip capacitor 1 nF [1]
C6 multilayer ceramic chip capa citor 30 pF [1]
C9, C13, C15 multilayer ceramic chip capacitor 62 pF [1]
C10 multilayer ceramic chip capacitor 51 pF [1]
C14 multilayer ceramic chip capacitor 36 pF [1]
C16, C17 multilayer ceramic chip capacitor 24 pF [1]
C18 multilayer ceramic chip capacitor 30 pF [1]
C19 multilayer ceramic chip capacitor 27 pF [1]
C20 multilayer ceramic chip capacitor 9.1 pF [1]
C23 multilayer ceramic chip capacitor 13 pF [1]
C24 multilayer ceramic chip capacitor 16 pF [1]
C25, C26 electrolytic capacitor 220 F; 63 V
L1, L2 3 turns 1 mm copper wire D = 2 mm; length = 3 mm
L3, L12 striplin e - (L W) 15 mm 2.4 mm
L4, L5, L10, L11 stripline - (L W) 47 mm 10 mm
L6, L7, L8, L9 stripline - (L W) 8 mm 15 mm
R1, R2 metal film resistor 2 ; 0.6 W
R3, R4 metal film resistor 20 ; 0.6 W
R5, R6 metal film resistor 1 ; 0.6 W
T1, T2 semi rigid coax 50 ; 58 mm EZ-141-AL-TP-M17
BLF578XR_BLF578XRS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 12 July 2013 8 of 15
NXP Semiconductors BLF578XR; BLF578XRS
Power LDMOS transistor
7.4 Graphical data
The following figures are measured in a class-AB production test circuit.
7.4.1 1-Tone CW pulsed
VDS = 50 V; IDq = 40 mA; f = 225 MHz; tp= 100 s;
=20%. VDS = 50 V; IDq = 40 mA; f = 225 MHz; tp= 100 s;
=20%.
(1) PL(1dB) = 61.3 dBm (1350 W)
(2) PL(3dB) = 61.9 dBm (1550 W)
Fig 6. Power gain and drain efficiency as function of
output power; typical value s Fig 7. Output power as a function of input power;
typical values
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BLF578XR_BLF578XRS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 12 July 2013 9 of 15
NXP Semiconductors BLF578XR; BLF578XRS
Power LDMOS transistor
VDS = 50 V; f = 225 MHz; tp= 100 s; =20%.
(1) IDq =20mA
(2) IDq =40mA
(3) IDq =80mA
(4) IDq = 160 mA
VDS = 50 V; f = 225 MHz; tp= 100 s; =20%.
(1) IDq =20mA
(2) IDq =40mA
(3) IDq =80mA
(4) IDq = 160 mA
Fig 8. Power gain as a function of output power;
typical values Fig 9. Drain efficiency as a function of output power;
typical values
IDq = 40 mA; f = 225 MHz; tp= 100 s; =20%.
(1) VDS =20V
(2) VDS =25V
(3) VDS =30V
(4) VDS =35V
(5) VDS =40V
(6) VDS =45V
(7) VDS =50V
IDq = 40 mA; f = 225 MHz; tp= 100 s; =20%.
(1) VDS =20V
(2) VDS =25V
(3) VDS =30V
(4) VDS =35V
(5) VDS =40V
(6) VDS =45V
(7) VDS =50V
Fig 10. Power gain as a function of output power;
typical values Fig 11. Drain effic iency as a func tion of outpu t power;
typical values
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BLF578XR_BLF578XRS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 12 July 2013 10 of 15
NXP Semiconductors BLF578XR; BLF578XRS
Power LDMOS transistor
8. Package outline
Fig 12. Package outline SOT539A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT539A 12-05-02
10-02-02
0 5 10 mm
scale
p
AF
b
e
D
U2
L
H
Q
c
5
12
43
D1
E
A
w1AB
M M M
q
U1
H1
C
B
M M
w2C
E1
M
w3
UNIT A
mm
Db
11.81
11.56 0.18
0.10 31.55
30.94 13.72 9.53
9.27 17.12
16.10 10.29
10.03
4.7
4.2
ce U2
0.250.25 0.51
w3
35.56
qw
2
w1
F
1.75
1.50
U1
41.28
41.02
H1
25.53
25.27
p
3.30
3.05
Q
2.26
2.01
EE
1
9.50
9.30
inches 0.465
0.455 0.007
0.004 1.242
1.218
D1
31.52
30.96
1.241
1.219 0.540 0.375
0.365 0.674
0.634 0.405
0.395
0.185
0.165 0.0100.010 0.0201.400
0.069
0.059 1.625
1.615
1.005
0.995 0.130
0.120 0.089
0.079
0.374
0.366
H
3.48
2.97
0.137
0.117
L
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
BLF578XR_BLF578XRS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 12 July 2013 11 of 15
NXP Semiconductors BLF578XR; BLF578XRS
Power LDMOS transistor
Fig 13. Package outline SOT539B
References
Outline
version European
projection Issue date
IEC JEDEC JEITA
SOT539B
sot539b_po
12-05-02
13-05-24
Unit(1)
mm max
nom
min
4.7
4.2
11.81
11.56
31.55
30.94
31.52
30.96
9.5
9.3
9.53
9.27
1.75
1.50
17.12
16.10
3.48
2.97
10.29
10.03 0.25
A
Dimensions
Earless flanged balanced ceramic package; 4 leads SOT539B
bc
0.18
0.10
DD
1EE
1e
13.72
FHH
1
25.53
25.27
LQ
2.26
2.01
U1
32.39
32.13
U2w2
0.25
inches max
nom
min
0.185
0.165
0.465
0.455
1.242
1.218
1.241
1.219
0.374
0.366
0.375
0.365
0.069
0.059
0.674
0.634
0.137
0.117
0.405
0.395 0.01
0.007
0.004 0.54 1.005
0.995
0.089
0.079
1.275
1.265 0.01
w3
0 5 10 mm
scale
c
E
Q
E1
e
H
L
b
H1
U1
U2
Dw2
w3
1 2
3 4
D
D
AF
D1
5
Note
1. millimeter dimensions are derived from the original inch dimensions.
BLF578XR_BLF578XRS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 12 July 2013 12 of 15
NXP Semiconductors BLF578XR; BLF578XRS
Power LDMOS transistor
9. Handling information
10. Abbreviations
11. Revision history
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 11. Abbreviatio ns
Acronym Description
CW Continuous Wave
ESD ElectroStatic Discharge
HF High Frequency
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor T ransistor
VSWR Voltage Standing-Wave Ratio
XR eXtremely Rugged
Table 12. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF578XR_BLF578XRS v.4 20130712 Product data sheet - BLF578XR_BLF578XRS v.3
Modifications: •The package outline Figure 13 is updated.
BLF578XR_BLF578XRS v.3 20120625 Product data sheet - BLF578XR_BLF578XRS v.2
Modifications: •The status of this document has been changed to Product data sheet.
BLF578XR_BLF578XRS v.2 20120514 Preliminary data sheet - BLF578XR_BLF578XRS v.1
BLF578XR_BLF578XRS v.1 20120130 Objective data sheet - -
BLF578XR_BLF578XRS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 12 July 2013 13 of 15
NXP Semiconductors BLF578XR; BLF578XRS
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre vail.
Product specificatio n — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond tho se described in the
Product data sheet.
12.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Se miconductors takes no
responsibility for the content in this document if provided by an inf ormation
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequ ential damages (including - wit hout limitatio n - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ ag gregate and cumulative l iability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, lif e-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconducto rs products in such equipment or
applications and ther efore such inclu sion and/or use is at the cu stomer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applicati ons or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for th e customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter ms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing i n this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or t he grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product develop ment.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specif ication.
Product [short] dat a sheet Production This document contains the prod uct specification.
BLF578XR_BLF578XRS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 12 July 2013 14 of 15
NXP Semiconductors BLF578XR; BLF578XRS
Power LDMOS transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for aut omotive use. It i s neither qua lif ied nor test ed
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in au tomotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standard s, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting f rom customer design an d
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BLF578XR; BLF578XRS
Power LDMOS transistor
© NXP B.V. 2013. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 July 2013
Document identifier: BLF578XR_BLF578XRS
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
7 Te st information. . . . . . . . . . . . . . . . . . . . . . . . . 5
7.1 Ruggedness in class-AB operation . . . . . . . . . 5
7.2 Impedance information. . . . . . . . . . . . . . . . . . . 5
7.3 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
7.4 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 8
7.4.1 1-Tone CW pulsed . . . . . . . . . . . . . . . . . . . . . . 8
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
9 Handling information. . . . . . . . . . . . . . . . . . . . 12
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
13 Contact information. . . . . . . . . . . . . . . . . . . . . 14
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15