Data Sheet MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A General Description Features The AP3015/A are Pulse Frequency Modulation (PFM) DC/DC converters. These two devices are functionally equivalent except the switching current limit. The AP3015 is designed for higher power systems with 350mA current limit, and the AP3015A is for lower power systems with 100mA current limit. * * * The AP3015/A feature a wide input voltage. The operation voltage is ranged from 1.2Vto 12V (1V to 12V for AP3015A). A current limited, fixed off-time control scheme conserves operating current, resulting in high efficiency over a broad range of load current. They also feature low quiescent current, switching current limiting, low temperature coefficient, etc. * * * Fewer tiny external components are required in the applications to save space and lower cost. Furthermore, to ease its use in differnet systems, a disable terminal is designed to turn on or turn off the chip. * The AP3015/A are available in SOT-23-5 package. * * * * * Low Quiescent Current In Active Mode (Not Switching): 17A Typical In Shutdown Mode: <1A Low Operating VIN 1.2V Typical for AP3015 1.0V Typical for AP3015A Low VCESAT Switch 200mV Typical at 300mA for AP3015 70mV Typical at 70mA for AP3015A High Output Voltage: up to 34V Fixed Off-Time Control Switching Current Limiting 350mA Typical for AP3015 100mA Typical for AP3015A Operating Temperature Range: -40oC to 85oC Applications MP3, MP4 Battery Power Supply System LCD/OLED Bias Supply Handheld Device Portable Communication Device SOT-23-5 Figure 1. Package Type of AP3015/A May 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 1 Data Sheet MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A Pin Configuration K Package (SOT-23-5) SW 1 GND 2 FB 3 5 VIN 4 SHDN Figure 2. Pin Configuration of AP3015/A (Top View) Pin Description Pin Number Pin Name Function 1 SW Switch Pin. This is the collector of the internal NPN power switch. Minimize the trace area connected to this Pin to minimize EMI 2 GND 3 FB Feedback Pin. Set the output voltage through this pin. The formula is VOUT=1.23V*(1+R1/ R2). Keep the loop between Vout and FB as short as possible to minimize the ripple and noise, which is beneficial to the stability and output ripple 4 SHDN Shutdown Control Pin. Tie this pin above 0.9V to enable the device. Tie below 0.25V to turn off the device 5 VIN Ground Pin. GND should be tied directly to ground plane for best performance Supply Input Pin. Bypass this pin with a capacitor as close to the device as possible May 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 2 Data Sheet MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A Functional Block Diagram FB VIN FEEDBACK COMPARATOR 3 1 ENABLE 400nS ONE SHOT VREF 5 DRIVER SW Q1 Bandgap RESET 4 SHDN CURRENT-LIMIT REFERENCE CURRENT-LIMIT COMPARATOR 2 GND Figure 3. Functional Block Diagram of AP3015/A Ordering Information - AP3015 E1: Lead Free G1: Green Circuit Type TR: Tape and Reel Blank: AP3015 A: AP3015A Package Temperature Range SOT-23-5 -40 to 85oC Package K: SOT-23-5 Part Number Lead Free Green Marking ID Lead Free Green Packing Type AP3015KTR-E1 AP3015KTR-G1 E6E G6E Tape & Reel AP3015AKTR-E1 AP3015AKTR-G1 E6F G6F Tape & Reel BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green package. May 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 3 Data Sheet MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Input Voltage VIN 15 V SW Voltage VSW 38 V FB Voltage VFB VIN V VSHDN 15 V RJA 265 oC/W TJ 150 o C TSTG -65 to 150 o C TLEAD 260 o C SHDN Pin Voltage Thermal Resistance (Junction to Ambient, no Heat sink) Operating Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10sec) ESD (Human Body Model) 3000 V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Input Voltage Operating Temperature Symbol VIN TA May 2010 Rev. 1. 4 Min Max AP3105 1.2 12 AP3105A 1.0 12 -40 85 Unit V oC BCD Semiconductor Manufacturing Limited 4 Data Sheet MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A Electrical Characteristics (VIN=VSHDN=1.2V, TA=25oC, unless otherwise specified.) Parameter Input Voltage Quiescent Current Symbol VIN IQ Feedback Voltage VFB FB Comparator Hysteresis VFBH Conditions 12 AP3015A 1.0 12 Not Switching 1.2V1V 400 nS VFB<0.6V 1.5 S mA mV 0.9 V 0.25 VSHDN =1.2V 2 3 VSHDN =5V 8 12 0.01 5 Switch Off, VSW=5V JC 52 May 2010 Rev. 1. 4 A A o C/W BCD Semiconductor Manufacturing Limited 5 Data Sheet MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A Typical Performance Characteristics Unless otherwise noted, VIN=1.2V 20.0 1.255 19.5 1.250 1.245 18.5 Feedback Voltage (V) Quiescent Current (A) 19.0 18.0 17.5 17.0 16.5 16.0 1.240 1.235 1.230 1.225 1.220 15.5 Quiescent Current, No Switching VIN=1.2V VIN=12V 15.0 14.5 14.0 -50 -25 0 25 50 75 1.215 1.210 1.205 -50 100 -25 O 0 25 50 75 100 O Junction Temperature ( C) Junction Temperature ( C) Figure 4. Quiescent Current vs. Junction Temperature Figure 5. Feedback Voltage vs. Junction Temperature 450 40 440 35 Shutdown Pin Current (A) Switch Off Time (ns) 430 420 410 400 390 380 370 25 20 15 10 O TJ=-50 C O -25 0 25 50 O 75 TJ=25 C 5 VFB>1V, VIN=1.2V 360 350 -50 30 0 0.0 100 Junction Temperature ( C) Figure 6. Switch Off Time vs. Junction Temperature O TJ=100 C 2.5 5.0 7.5 10.0 12.5 15.0 Shutdown Pin Voltage (V) Figure 7. Shutdown Pin Current vs. Shutdown Pin Voltage May 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 6 Data Sheet MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A Typical Performance Characteristics (Continued) Unless otherwise noted, VIN=1.2V 500 Switch Current Limit (mA) Switch Current Limit (mA) 450 400 350 300 AP3015 VIN=1.2V VIN=12V 250 200 -50 -25 0 25 50 75 100 120 118 116 114 112 110 108 106 104 102 100 98 96 94 92 90 88 86 84 82 80 -50 AP3015A VIN=1.2V VIN=12V -25 O 0 25 50 75 100 O Junction Temperature ( C) Junction Temperature ( C) 250 80 240 76 230 72 Saturation Voltage (mV) Saturation Voltage (mV) Figure 8. Switch Current Limit vs. Junction Temperature Figure 9. Switch Current Limit vs. Junction Temperature 220 210 200 190 180 AP3015, ISWITCH=300mA VIN=1.2V VIN=12V 170 160 150 -50 -25 0 25 50 O 75 68 64 60 56 52 AP3015A, ISWITCH=70mA VIN=1.2V VIN=12V 48 44 40 -50 100 -25 0 25 50 75 100 O Junction Temperature ( C) Junction Temperature ( C) Figure 10. Saturation Voltage vs. Junction Temperature Figure 11. Saturation Voltage vs. Junction Temperature May 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 7 Data Sheet MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A Typical Performance Characteristics (Continued) 85 85 80 80 75 75 Efficiency (%) Efficiency (%) Unless otherwise noted, VIN=1.2V 70 65 AP3015 VOUT=20V, L=10H, COUT=1F Refer to Figure 14 VIN=4.2V VIN=3.3V VIN=2.5V 60 55 50 0.1 1 Load Current (mA) 70 65 60 55 50 0.1 10 Figure 12. Efficiency AP3015A VOUT=3.3V, L=10H, COUT=20F Refer to Figure 15 VIN=2.5V VIN=1.2V 1 Load Current (mA) 10 Figure 13. Efficiency Application Information chip and turns off the NPN switch. The load current is then supplied solely by output capacitor and the output voltage will decrease. When the FB pin voltage drops below the lower hysteresis point of Feedback Comparator, the Feedback Comparator enables the device and repeats the cycle described previously. Under not switching condition, the IQ of the device is about 17A. Operating Principles AP3015/A feature a constant off-time control scheme. Refer to Figure 3 the bandgap voltage VREF (1.23V typical) is used to control the output voltage. When the voltage at the FB pin drops below the lower hysteresis point of Feedback Comparator (typical hysteresis is 8mV), the Feedback Comparator enables the chip and the NPN power switch is turned on, the current in the inductor begins to ramp up and store energy in the coil while the load current is supplied by the output capacitor. Once the current in the inductor reaches the current limit, the Current-Limit Comparator resets the 400ns One-Shot which turns off the NPN switch for 400ns. The SW voltage rises to the output voltage plus a diode drop and the inductor current begins to ramp down. During this time the energy stored in the inductor is transferred to COUT and the load. After the 400ns off-time, the NPN switch is turned on and energy will be stored in the inductor again. The AP3015/A contain additional circuitry to provide protection during start-up or under short-circuit conditions. When the FB pin voltage is lower than approximately 0.6V, the switch off-time is increased to 1.5s and the current limit is reduced to about 250mA (70mA for AP3015A). This reduces the average inductor current and helps to minimize the power dissipation in the AP3015/A power switch, in the external inductor and in the diode. The SHDN pin can be used to turn off the AP3015/A and reduce the IQ to less than 1A. In shutdown mode the output voltage will be a diode drop below the input voltage. This cycle will continue until the voltage at FB pin reaches 1.23V, the Feedback Comparator disables the May 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 8 Data Sheet MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A Typical Application VIN C1 4.7F VIN SHDN VOUT D1 SS14 L1 10 2.5V to 4.2V R1 2M SW AP3015 20V C2 1F RLOAD FB GND R2 130K C1, C2: X5R or X7R Ceramic Capacitor L1: SUMIDA CDRH4D16FB/NP-100MC or Equivalent Figure 14. AP3015 Typical Application in LCD/OLED Bias Supply VIN C1 4.7F VIN SHDN VOUT D1 SS14 L1 10 1.2V to 2.5V R1 1M SW AP3015A 3.3V FB GND C3 10pF C2 20F RLOAD R2 600K C1, C2, C3: X5R or X7R Ceramic Capacitor L1: SUMIDA CDRH4D16FB/NP-100MC or Equivalent Figure 15. AP3015A Typical Application in 1 or 2 Cells to 3.3V Boost Converter May 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 9 Data Sheet MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A Mechanical Dimensions SOT-23-5 Unit: mm(inch) 0.300(0.012) 0.600(0.024) 1.500(0.059) 1.700(0.067) 0.100(0.004) 0.200(0.008) 2.950(0.116) 2.650(0.104) 2.820(0.111) 3.020(0.119) 0.200(0.008) 0.700(0.028) REF 0.300(0.012) 0.400(0.016) 0 8 1.800(0.071) 2.000(0.079) 0.000(0.000) MAX 1.450(0.057) 0.950(0.037) TYP 0.150(0.006) 0.900(0.035) 1.300(0.051) May 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 10 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited does does not not assume assume any any responsibility responsibility for for use use of of any any its its products products for for any any particular purpose, particular purpose, nor nor does does BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited assume assume any any liability liability arising arising out out of of the the application application or or use use of any of any its its products products or or circuits. circuits. BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited does does not not convey convey any any license license under under its its patent patent rights rights or or other rights other rights nor nor the the rights rights of of others. others. MAIN SITE SITE MAIN - Headquarters BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-basedLimited Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Tel: Fax: +86-21-24162277 800,+86-21-24162266, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 REGIONAL SALES OFFICE Shenzhen OfficeSALES OFFICE REGIONAL - Wafer FabSemiconductor Manufacturing Limited BCD Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. - IC Design Group 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 1491,YiFax: 0008200233, China 8F, Zone B, 900, Shan+86-21-5450 Road, Shanghai Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 Taiwan Office Shanghai Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Semiconductor Shenzhen SIM-BCD Office Office (Taiwan) Company Limited Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan Shenzhen, 4F, 298-1, Guang Road,(Taiwan) Nei-Hu District, Taipei, Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.District, Shenzhen Office BCDRui Semiconductor Company Limited China Taiwan Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Tel: +86-755-8826 Tel: +886-2-2656 2808 Room E, 5F, Noble 7951 Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Taiwan Fax: +86-755-88267951 7865 Fax: +886-2-2656 28062808 Tel: +86-755-8826 Tel: +886-2-2656 Fax: +86-755-8826 7865 Fax: +886-2-2656 2806 USA Office BCD Office Semiconductor Corp. USA 30920Semiconductor Huntwood Ave.Corporation Hayward, BCD CA 94544, USA Ave. Hayward, 30920 Huntwood Tel :94544, +1-510-324-2988 CA U.S.A Fax:: +1-510-324-2988 +1-510-324-2788 Tel Fax: +1-510-324-2788