DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
2
2 - 2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC395
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
V02.0109
General Description
Features
Functional Diagram
The HMC395 die is a GaAs InGaP Heterojunction Bi-
polar Transistor (HBT) Gain Block MMIC DC - 4 GHz
ampli er. This ampli er die can be used as either a
cascadable 50 Ohm gain stage or to drive the LO of
HMC mixers with up to +17 dBm output power. The
HMC395 offers 16 dB of gain and an output IP3 of +31
dBm while requiring only 54 mA from a +5V supply.
The Darlington feedback pair used results in reduced
sensitivity to normal process variations and yields ex-
cellent gain stability over temperature while requiring
a minimal number of external bias components. The
HMC395 can easily be integrated into Multi-Chip-
Modules (MCMs) due to its small (0.22mm2) size. All
data is with the chip in a 50 Ohm test  xture connected
via 0.025mm (1mil) diameter wire bonds of minimal
length 0.5mm (20mils).
Gain: 15 dB
P1dB Output Power: +16 dBm
Stable Gain Over Temperature
50 Ohm I/O’s
Small Size: 0.38 x 0.58 x 0.1 mm
Typical Applications
An excellent cascadable 50 Ohm
Gain Block or LO Driver for:
• Microwave & VSAT Radios
• Test Equipment
• Military EW, ECM, C3I
• Space Telecom
Electrical Speci cations, Vs= +5.0V, Rbias= 22 Ohm, TA = +25° C
Parameter Min. Typ. Max. Units
Gain DC - 1.0 GHz
1.0 - 4.0 GHz
16
15
dB
dB
Gain Variation Over Temperature DC - 1.0 GHz
1.0 - 4.0 GHz
0.004
0.008
dB/ °C
dB/ °C
Input Return Loss DC - 1.0 GHz
1.0 - 4.0 GHz
18
15
dB
dB
Output Return Loss DC - 1.0 GHz
1.0 - 4.0 GHz
17
10
dB
dB
Reverse Isolation DC - 4.0 GHz 19 dB
Output Power for 1 dB Compression (P1dB)
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
16
15
10
dBm
dBm
dBm
Output Third Order Intercept (IP3)
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
31
28
22
dBm
dBm
dBm
Noise Figure DC - 4.0 GHz 4.5 dB
Supply Current (Icq) 54 mA
Note: Data taken with broadband bias tee on device output.
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
2
2 - 3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Output Return Loss vs. Temperature
Gain & Return Loss Gain vs. Temperature
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
Noise Figure vs. Temperature
-25
-20
-15
-10
-5
0
5
10
15
20
012345678
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
012345
+25C
+85C
-55C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
1 1.5 2 2.5 3 3.5 4 4.5 5
+25C
+85C
-55C
NOISE FIGURE (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
+25C
+85C
-55C
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
+25C
+85C
-55C
RETURN LOSS (dB)
FREQUENCY (GHz)
5
8
11
14
17
20
012345
+25C
+85C
-55C
GAIN (dB)
FREQUENCY (GHz)
HMC395
V02.0109 InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
2
2 - 4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Power Compression @ 4 GHz
P1dB vs. Temperature Psat vs. Temperature
Output IP3 vs. Temperature
Power Compression @ 1 GHz
Gain, Power, Output IP3 & Supply
Current vs.Supply Voltage @ 1 GHz
-10
-5
0
5
10
15
20
-20 -16 -12 -8 -4 0 4
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
5
10
15
20
25
30
35
40
0
20
40
60
80
4.5 4.75 5 5.25 5.5
Gain
P1dB
Psat
OIP3
Icq
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm
)
Icq (mA)
Vs(Vdc)
10
14
18
22
26
30
34
1 1.5 2 2.5 3 3.5 4 4.5 5
+25C
+85C
-55C
IP3 (dBm)
FREQUENCY (GHz)
-10
-5
0
5
10
15
20
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
5
8
11
14
17
20
1 1.5 2 2.5 3 3.5 4 4.5 5
+25C
+85C
-55C
Psat (dBm)
FREQUENCY (GHz)
5
8
11
14
17
20
1 1.5 2 2.5 3 3.5 4 4.5 5
+25C
+85C
-55C
P1dB (dBm)
FREQUENCY (GHz)
HMC395
V02.0109 InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
2
2 - 5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) +7.0 Vdc
RF Input Power (RFIN)(Vcc = +5.0 Vdc) +10 dBm
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 7.3 mW/°C above 85 °C) 0.475 W
Thermal Resistance
(junction to die bottom) 137 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. ALL TOLERANCES ARE ±0.001 (0.025)
3. DIE THICKNESS IS 0.004” (0.100) BACKSIDE IS GROUND
4. BOND PADS ARE 0.004” (0.100) SQUARE
5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
6. BACKSIDE METALLIZATION: GOLD
7. BOND PAD METALLIZATION: GOLD
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information [1]
Standard Alternate
GP-3 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
HMC395
V02.0109 InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
2
2 - 6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pad Number Function Description Interface Schematic
1RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
2RFOUT RF output and DC Bias for the output stage.
Die
Bottom GND Die bottom must be connected to RF/DC ground.
Pad Descriptions
Application Circuit
Recommended Component Values
Component Frequency (MHz)
50 100 500 1000 4000
L1 270 nH 270 nH 100 nH 56 nH 8.2 nH
C1, C2 0.01 μF 0.01 μF 500 pF 100 pF 100 pF
Note:
1. Select Rbias to achieve Icq using equation below,
Rbias
> 22 Ohm.
2. External blocking capacitors are required on
RFIN and RFOUT.
Icq = Vs - 3.9
Rbias
HMC395
V02.0109 InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
2
2 - 7
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Assembly Diagram
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag
for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or  ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The
mounting surface should be clean and  at.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy  llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31mm (12 mils).
HMC395
V02.0109 InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz