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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. QSD123, QSD124 Plastic Silicon Infrared Phototransistor Features Description NPN Silicon Phototransistor The QSD123/124 is a phototransistor encapsulated in an infrared transparent, black T-1 3/4 package. Package Type: T-1 3/4 Matched Emitter: QED12X/QED22X/QED23X Narrow Reception Angle: 24C Daylight Filter Package Material and Color: Black Epoxy High Sensitivity Package Dimensions 0.195 (4.95) REFERENCE SURFACE 0.800 (20.3) MIN EMITTER 0.305 (7.75) 0.040 (1.02) NOM COLLECTOR Schematic COLLECTOR 0.500 (1.25) 0.100 (2.54) NOM 0.240 (6.10) 0.215 (5.45) EMITTER 0.020 (0.51) SQ. (2X) Notes: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of 0.010 (0.25) on all non-nominal dimensions unless otherwise specified. (c)2012 Fairchild Semiconductor Corporation QSD123, QSD124 Rev. 1.3 www.fairchildsemi.com QSD123, QSD124 -- Plastic Silicon Infrared Phototransistor November 2016 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter TOPR Operating Temperature TSTG Storage Temperature TSOL-I Rating Unit -40 to +100 C -40 to +100 C Soldering Temperature (Iron)(2,3,4) 240 for 5 sec C Soldering Temperature (Flow)(2,3) 260 for 10 sec C VCE Collector-Emitter Voltage 30 V VEC Emitter-Collector Voltage 5 V 100 mW TSOL-F Power PD Dissipation(1) Notes: 1. Derate power dissipation linearly 1.33mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) minimum from housing. 5. = 880nm, AlGaAs. Electrical/Optical Characteristics (TA = 25C) Symbol PS ICEO Parameter Test Conditions Min. Typ. Max. Units Peak Sensitivity Wavelength 880 nm Reception Angle 12 Collector-Emitter Dark Current VCE = 10V, Ee = 0 100 nA BVCEO Collector-Emitter Breakdown IC = 1mA 30 V BVECO Emitter-Collector Breakdown IE = 100A 5 V IC(ON) On-State Collector Current(5) Ee = 0.5mW/cm2, VCE = 5V 4 6 QSD123 QSD124 Saturation Voltage(5) Ee = tr Rise Time VCC = 5V, RL = 100, IC = 0.2mA tf Fall Time VCE(SAT) (c)2012 Fairchild Semiconductor Corporation QSD123, QSD124 Rev. 1.3 0.5mW/cm2, IC = 0.5mA 16 29 mA 0.4 V mA 7 s 7 s www.fairchildsemi.com 2 QSD123, QSD124 -- Plastic Silicon Infrared Phototransistor Absolute Maximum Ratings (TA = 25C unless otherwise specified) Figure 1. Light Current vs. Radiant Intensity Figure 2. Angular Response Curve 100 110 100 90 80 70 IC(ON) - Light Current (mA) 120 60 130 10 50 40 140 150 30 20 160 1 10 170 180 1.0 0.1 0.0 0.2 0.4 0.6 0.8 0.8 0.4 0.6 0.2 0.0 0.2 0.4 0.6 0.8 0 1.0 1.0 Ee - Radiant Intensity (mW/cm 2) Figure 3. Dark Current vs. Collector - Emitter Voltage Figure 4. Light Current vs. Collector - Emitter Voltage 101 I L - Normalized Light Current ICEO - Dark Current (nA) 101 100 10-1 10-2 Ie=1mW/cm 2 Ie=0.5mW/cm 2 100 Ie=0.2mW/cm 2 Ie=0.1mW/cm 2 10-1 Normalized to: VCE = 5V Ie = 0.5mW/cm 2 10-2 TA = 25 oC 10-3 0 5 10 15 20 25 10-3 0.1 30 1 VCE - Collector-Emitter Voltage (V) 1 0 VCE - Collector-Emitter Voltage (V) Figure 5. Dark Current vs. Ambient Temperature 10 4 ICEO - Normalized Dark Current Normalized to: VCE = 25V 10 3 TA = 25 oC VCE =25V 10 2 VCE =10V 10 1 10 0 10 -1 -40 -20 0 20 40 60 80 100 o TA - Ambient Temperature ( C) (c)2012 Fairchild Semiconductor Corporation QSD123, QSD124 Rev. 1.3 www.fairchildsemi.com 3 QSD123, QSD124 -- Plastic Silicon Infrared Phototransistor Typical Performance Characteristics TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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