2SK1519, 2SK1520 Silicon N Channel MOS FET REJ03G0948-0300 (Previous: ADE-208-1288) Rev.3.00 Apr 27, 2006 Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) D G 1 Rev.3.00 Apr 27, 2006 page 1 of 6 1. Gate 2. Drain 3. Source S 2 3 2SK1519, 2SK1520 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Symbol VDSS 2SK1519 2SK1520 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C Ratings 450 500 30 30 120 30 200 150 -55 to +150 VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Symbol 2SK1519 2SK1520 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain 2SK1519 current 2SK1520 V(BR)DSS V(BR)GSS IGSS IDSS Gate to source cutoff voltage Static drain to source on 2SK1519 state resistance 2SK1520 RDS(on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF Body to drain diode reverse recovery time Note: 3. Pulse test Rev.3.00 Apr 27, 2006 page 2 of 6 VGS(off) trr Min 450 500 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 30 -- -- -- -- -- -- 10 250 V A A 2.0 -- -- 15 -- -- -- -- -- -- -- -- -- -- 0.11 0.12 25 5800 1550 170 65 170 415 200 1.1 120 3.0 0.15 0.16 -- -- -- -- -- -- -- -- -- -- V IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 15 A, VGS = 10 V *3 S pF pF pF ns ns ns ns V ns ID = 15 A, VDS = 10 V *3 VDS = 10 V, VGS = 0, f = 1 MHz ID = 15 A, VGS = 10 V, RL = 2 IF = 30 A, VGS = 0 IF = 30 A, VGS = 0, diF/dt = 100 A/s 2SK1519, 2SK1520 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 1,000 300 Drain Current ID (A) Channel Dissipation Pch (W) 300 200 100 rea s a n) 10 i h (o nt 10 s n i y R DS 0 o i t b PW s era ed 1 m = Op limit DC 1 s 0m is Op s( er 1S ati on ho (T t) C = 25 C ) 100 30 10 3 1 0.3 0.1 0 50 100 300 1,000 Typical Transfer Characteristics 50 Pulse Test VDS = 10 V Pulse Test 5V Drain Current ID (A) 40 30 4.5 V 20 VGS = 4 V 10 4 8 16 12 40 30 20 TC = 75C 25C -25C 10 0 20 2 6 4 10 8 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 10 Pulse Test 8 ID = 50 A 6 4 20 A 2 10 A 2 4 6 8 Gate to Source Voltage VGS (V) Rev.3.00 Apr 27, 2006 page 3 of 6 10 Static Drain to Source on State Resistance RDS (on) () Drain Current ID (A) 100 Typical Output Characteristics 10 V Drain to Source Saturation Voltage VDS (on) (V) 30 10 Drain to Source Voltage VDS (V) 6V 0 3 Case Temperature TC (C) 50 0 1 150 2SK1519 2SK1520 Ta = 25C 5 Pulse Test 2 1 0.5 0.2 VGS = 10 V, 15 V 0.1 0.05 2 5 10 20 50 Drain Current ID (A) 100 200 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance vs. Temperature 0.5 VGS = 10 V Pulse Test 0.4 ID = 50 A 20 A 0.3 0.2 10 A 0.1 0 -40 40 0 80 120 160 TC = -25C 20 25C 75C 10 5 2 1 0.5 1 5 2 10 20 Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 50 10,000 Ciss di/dt = 100 A/s, VGS = 0 Pulse Test Capacitance C (pF) 500 200 100 50 1,000 Coss 100 Crss 20 VGS = 0 f = 1 MHz 10 0.5 10 2 1 5 10 20 200 Dynamic Input Characteristics Switching Characteristics 20 VDD = 100 V 250 V 400 V 16 12 VGS VDS 8 VDD = 400 V 250 V 100 V 4 ID = 30 A Pulse Test 0 0 40 Drain to Source Voltage VDS (V) 600 400 30 Reverse Drain Current IDR (A) 1,000 800 20 10 0 50 80 160 240 320 Gate Charge Qg (nc) Rev.3.00 Apr 27, 2006 page 4 of 6 400 50 1,000 Gate to Source Voltage VGS (V) Reverse Recovery Time t rr (ns) VDS = 10 V Pulse Test 50 Drain Current ID (A) 1,000 Drain to Source Voltage VDS (V) 100 Case Temperature TC (C) td (off) 500 Switching Time t (ns) Static Drain to Source on State Resistance RDS (on) () 2SK1519, 2SK1520 tf 200 100 tr td (on) 50 20 10 0.5 VGS = 10 V, PW = 2 s . duty < 1%, VDD =. 30 V 1 2 5 10 20 Drain Current ID (A) 50 2SK1519, 2SK1520 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 50 Pulse Test 40 30 20 10 V 10 VGS = 0, -5 V 0 0 0.4 0.8 1.2 1.6 2.0 Normalized Transient Thermal Impedance S (t) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25C 1 D=1 0.5 0.3 0.2 ch-c (t) = S (t) * ch-c ch-c = 0.625C/W, TC = 25C 0.1 0.1 0.05 PDM 0.02 0.03 0.01 ulse ot P 1 Sh 0.01 10 T 100 1m 10 m D = PW T PW 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveforms Vin Monitor 90% Vout Monitor Vin D.U.T RL 50 Vin 10 V Rev.3.00 Apr 27, 2006 page 5 of 6 V . DD =. 30 V Vout 10% 10% 90% td (on) tr 10% 90% td (off) tf 2SK1519, 2SK1520 Package Dimensions JEITA Package Code RENESAS Code PRSS0004ZF-A Previous Code TO-3PL / TO-3PLV MASS[Typ.] 9.9g Unit: mm 5.0 0.2 20.0 0.3 3.3 0.2 20.0 0.6 2.5 0.3 26.0 0.3 6.0 0.2 Package Name TO-3PL 1.4 3.0 2.2 1.2 +0.25 -0.1 5.45 0.5 5.45 0.5 0.6 +0.25 -0.1 2.8 0.2 1.0 3.8 7.4 Ordering Information Part Name 2SK1519-E 2SK1520-E Quantity 360 pcs 360 pcs Shipping Container Box (Tube) Box (Tube) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Apr 27, 2006 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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