Rev.3.00 Apr 27, 2006 page 1 of 6
2SK1519, 2SK1520
Silicon N Channel MOS FET REJ03G0948-0300
(Previous: ADE-208-12 88)
Rev.3.00
Apr 27, 2006
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• Built-in fast recovery diode (trr = 120 ns)
• Suitable for motor control, switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0004ZF-A
(Package name: TO-3PL)
1. Gate
2. Drain
3. Source
D
G
S
123
2SK1519, 2SK1520
Rev.3.00 Apr 27, 2006 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
2SK1519 450 Drain to source voltage 2SK1520 VDSS 500 V
Gate to source voltage VGSS ±30 V
Drain current ID 30 A
Drain peak current ID(pulse)*1 120 A
Body to drain diode reverse drain current IDR 30 A
Channel dissipation Pch*2 200 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
2SK1519 450
Drain to source
breakdown voltage 2SK1520 V(BR)DSS 500 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0
2SK1519 VDS = 360 V, VGS = 0
Zero gate voltage drain
current 2SK1520 IDSS — — 250 µA VDS = 400 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V
2SK1519 — 0.11 0.15
Static drain to source on
state resistance 2SK1520 RDS(on) — 0.12 0.16 Ω I
D = 15 A, VGS = 10 V *3
Forward transfer admittance |yfs| 15 25 — S ID = 15 A, VDS = 10 V *3
Input capacitance Ciss — 5800 — pF
Output capacitance Coss — 1550 — pF
Reverse transfer capacitance Crss — 170 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 65 — ns
Rise time tr — 170 — ns
Turn-off delay time td(off) — 415 — ns
Fall time tf — 200 — ns
ID = 15 A, VGS = 10 V,
RL = 2 Ω
Body to drain diode forward v oltage VDF — 1.1 — V IF = 30 A, VGS = 0
Body to drain diode reverse recover y
time trr — 120 — ns
IF = 30 A, VGS = 0,
diF/dt = 100 A/µs
Note: 3. Pulse test
2SK1519, 2SK1520
Rev.3.00 Apr 27, 2006 page 3 of 6
Main Characteristics
300
200
100
0 50 100 150
Case Temperature TC (°C)
Power vs. Temperature Derating
Channel Dissipation Pch (W)
1,000
30
3
0.1
10 100 1,000
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Maximum Safe Operation Area
300
0.3
1 3 30 300
Ta = 25°C
10 µs
100 µs
DC Operation (T
C
= 25
°
C)
1 ms
PW = 10 ms (1 Shot)
100
10
1
Operation in this area
is limited by R
DS (on)
2SK1520
2SK1519
50
820
Drain to Source Voltage VDS (V)
Typical Output Characteristics
40
10
412 16
Pulse Test
0
20
30
4.5 V
V
GS
= 4 V
Drain Current ID (A)
5 V
6 V
10 V
50
410
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Typical Transfer Characteristics
40
10
268
–25°C
0
20
30
V
DS
= 10 V
Pulse Test
25°C
T
C
= 75°C
10
410
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage VDS (on) (V)
8
2
2680
4
6
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20 A
I
D
= 50 A
Pulse Test
10 A
5
200
Drain Current ID (A)
Static Drain to Source on State Resistance
RDS (on) (Ω)
2
0.1
5 20 1002
0.5
1
Static Drain to Source on State
Resistance vs. Drain Current
0.2
0.05
50
V
GS
= 10 V, 15 V
Pulse Test
10
2SK1519, 2SK1520
Rev.3.00 Apr 27, 2006 page 4 of 6
0.5
40 160
Case Temperature T
C
(°C)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.4
0.1
0 80 120
0
0.2
0.3
Static Drain to Source on State
Resistance vs. Temperature
I
D
= 50 A
V
GS
= 10 V
Pulse Test
–40
20 A
10 A
100
150
Drain Current I
D
(A)
Forward Transfer Admittance yfs (S)
50
5
0.5 2 10
1
10
20
Forward Transfer Admittance
vs. Drain Current
V
DS
= 10 V
Pulse Test
2
520
75°C
25°C
T
C
= –25°C
500
10
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
200
20
1
50
100
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/µs, V
GS
= 0
Pulse Test
10
0.5 2 20 505
1,000 10,000
20 50
Drain to Source Voltage V
DS
(V)
Capacitance C (pF)
100
10 30 40
Typical Capacitance vs.
Drain to Source Voltage
0
10
Crss
Coss
Ciss
V
GS
= 0
f = 1 MHz
1,000
1,000
160 400
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
800
80 2400 320
600
400
200 I
D
= 30 A
Pulse Test
V
DD
= 400 V
Dynamic Input Characteristics
250 V
V
GS
20
Gate to Source Voltage V
GS
(V)
16
12
8
4
0
0
V
DS
100 V
V
DD
= 100 V
250 V
400 V
1,000
250
Drain Current I
D
(A)
Switching Time t (ns)
500
50
1520
10
100
200
0.5
20
10
Switching Characteristics
t
f
t
d (off)
t
r
V
GS
= 10 V, PW = 2 µs
duty < 1%, V
DD
30 V
=
..
t
d (on)
2SK1519, 2SK1520
Rev.3.00 Apr 27, 2006 page 5 of 6
50
2.0
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
40
0.4 0.8 1.6
0
20
30
0
10
1.2
Pulse Test
10 V
V
GS
= 0, –5 V
Reverse Drain Current vs.
Source to Drain Voltage
3
Pulse Width PW (S)
Normalized Transient Thermal Impedance γ
S
(t)
1
0.1
0.3
D = 1
10 µ
0.03
0.01
100 µ10 m 100 m 1 101 m
T
C
= 25°C
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot Pulse
Normalized Transient Thermal Impedance vs. Pulse Width
TPW
P
DM
D = T
PW
θch–c (t) = γ
S
(t) • θch–c
θch–c = 0.625°C/W, T
C
= 25°C
Switching Time Test Circuit
Vin Monitor
Vin
10 V
50 Ω
D.U.T
Vout Monitor
V
DD
30 V
=
..
R
L
Waveforms
Vin
Vout
t
d (on)
10%
t
r
t
f
10%
90%
10%
90%
t
d (off)
90%
2SK1519, 2SK1520
Rev.3.00 Apr 27, 2006 page 6 of 6
Package Dimensions
20.0 ± 0.3
φ3.3 ± 0.2
1.4
2.2
3.0
1.2
5.45 ± 0.5
5.45 ± 0.5
1.0
3.8
7.4
2.8 ± 0.2
0.6
5.0 ± 0.2
6.0 ± 0.2
26.0 ± 0.3
20.0 ± 0.6
2.5 ± 0.3
+0.25
–0.1
+0.25
–0.1
Previous Code
PRSS0004ZF-A TO-3PL / TO-3PLV
MASS[Typ.]
9.9g
RENESAS CodeJEITA Package Code
Unit: mm
Package Name
TO-3PL
Ordering Information
Part Name Quantity Shipping Container
2SK1519-E 360 pcs Box (Tube)
2SK1520-E 360 pcs Box (Tube)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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