| Ordering number: EN 2112B | 25B1201/2SD1801 | PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications - Voltage regulators, relay drivers, lamp drivers, electrical equipment Features . Adoption of FBET, MBIT processes - Large current capacity and wide ASO . Low collector-to-emitter saturation voltage - Fast switching speed - Small and slim package making it easy to make 25B1201/25D1801-used sets smaller ( ):25B1201 Absolute Maximum Ratings at Ta= 25C unit Collector to Base Voltage Vcpo ()60 v Collector to Emitter Voltage Vogo ()50 Vv Emitter to Base Voltage VEBO ()6 Vv Collector Current Ic (-)2 A Collector Current(Pulse) Icp ()4 A Collector Dissipation Pe 0.8 WwW Te= 25C 15 WwW Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Electrical Characteristics at Ta= 25C min typ max unit Collector Cutoff Current IcBo Vep=(-)50V, Ig =0 (}100 nA Emitter Cutoff Current IEBO Vep=()4V,Ic=0 ()100 nA DC Current Gain bre) Veg=()2V Ig =()100mA 100% 560% hpe(2) Vog=l()2V Ie =()1.5A 40 Gain-Bandwidth Product fp Vor=(-)10V I=(-)}50mA 150 MHz Output Capacitance Cob Ver=()10V,f=1MHz (22)12 pF C-E Saturation Voltage VeEwsat) Ic=()1A,Ig=()50mA 0.15 0.4 Vv (~0.3) (0.7) Continued on next page. % : The 25B1201/2SD1801 are classified by 100mA hry as follows : | 100 R 200 | 140 s 280 | 200 T 400 | 280 U 560 | Package Dimensions 2045B Package Dimensions 2044B (unit: mm) - 83. 4 as (unit ; mm). 6s 4 fe -?: al " 1 = jy -| 7 | wnt acl 0.05 Spree . 0.05 tr wr 0.7 + H-f-L2 iH? 2d 9-6, fh owe a5 of Ge 1: Base 1 ea 2: Collector 1272 1: Base 3: Emitter 4: Collector 2: Collector foo] 3: Emitter SANYO: TP-FA 23 -f- -f fens 4: Collector SANYO: TP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg., 1-10, 1 eel ANI FneA Lee ISO POLO ACPA Leer alata th! /8259M0/4137K1/4076KI,TS No.2112-1/4 Continued from preceding page. B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Turn-on Time Storage Time Fall Time VBR(sat) ViBRICBO ViBR)CEO V(BR)EBO ton tstg te 25B1201/28D1801 min typ max unit Ic=()1A, Ip =()50mA ()0.9 ()1.2 Vv Io =()10pA,Jz=0 ()60 Vv Ic=()1mA,Rpg= ()50 Vv Ip =()10pA,Ic=0 ()6 Vv See specified Test Circuit, 60 ns * (450)550 ns + 30 ns Switching Time Test Circuit | PW = 20us lat Duty Cycles) ty OUTPUT INPUT ro Ic=101B1=-101 B2=500mA, Vc=25 (For PNP, the polarity is reversed.) Unit (Resistance : Q, Capacitance : F) Ir - Ic - V 2.4 c ~ NCE be _ le | CE | 2SB1201 gon 2501801 <7? ugee | <- h I | Lt | 2 21.6 3 PY Leer k E t.2 | 5 va 1 mA, 3 2 0.8 al ama = 5 aa 5 5 0.4 = mA | B=0 0 y 1 B=0 o -O.4 -0.8 -1.2 -1.6 -2.0 2.4 9 0.8 0.8 . 1.2 16 2.0 24 Collector to Emitter Voltage, Voge V Collector to Emitter Voltage,Vcop, V Ic - Vv Ic - V -1200 C cE 1200 Cc CE -7mh 2881201 2561801 ieco - 1000 . 2 -e0 -~&m > 800 5 2 2 c ~600 -3mA 600 3 3 5 2mA rs -2m 8-10 8 400 z | z 3 _200 - ima & 200 I B=0 0 0 -2 -4 -6 ~B -10 -12 0 2 4 . 6 8 10 12 Collector to Emitter Voltage, Vop V Collector to Emitter Voltage, Vo, - V No.2112-2/4 2$B1201/28D1801 Ic - VBE 2881201 VCEs-2y a iI! as /] s Affs - Li : wy 0 0.2 0.4 -06 -0.8 -1.0 -1.2 Base to Emitter Voltage, Vaz V Collector Current; A 000 hee - Ic. 28B1201 VcEs-2v E i ] a GS _> 5 2 4 Le] o o a -0.01 0.1 -1.0 Collector Current,Ic A fT -I 8 2881201 VcB=t0V Gain-Bandwidth Preduct,fp MHz 3 3 iL S -10 1000 Collector Currentlg mA Cob - Yep 8 Output Capacitance,c,, pF S -1.0 -10 -100 Collector to Base Voltage, Vox V 26 Tc ~ VBE 2501801 Vces2V i Hl I = 1.6 { i ff 5 12 Py 5D ~ 5 0 gy 0.8 i g 0.4 7 t 0 - L/h 0 0.2 O04 O08 OB 10 f.2 Base to Emitter Voltage,Van V hreE - Ic 1000 2501801 VCE=2V i by ao a 3 os a Fe Hj 100 RD 2 a 0.01 Tar 1.0 Collector CurrentIo A fr - Ic B 2501801 NV ep=1 Gain-Bandwidth Product,fp - MHz 8 10 10 100 1000 Collector CurrentIo mA 00 Cob - Vcp 25091801 = 7 f=1MHz Go ! 2. oq 3 4 2 3 4 2 [sy 6 om s mY Oo PN] 3 ~~ & = 3 lh og 4.0 ? 3 : 100 10 yo, Collector to Base Voltage,Vop ~ V No.2112-3/4 25B1201/25D1801 = oa m w pw ctr ! a oO g = oO m 8 art? 5 - Saturation Voltage,Vcgeay V - - I 8 Saturation Voltage, Vicr(cat) mV Collector to Emitter Collector to Emitter s 0.01 1.0 =0.1 04 Collector Current,ic A Collector Current,Ic A VBE(sat} - Ic VBE{sat) 7 IC & 2501801 Ic/ I B=20 4 o Saturation Voltage, Variety Saturation Voltage, Vega) V Base to Emitter Base to Emitter 0.01 -0.1 -1.9 0.0! Q.1 1.0 Collector Current. A Collector Current, A ASQ 16 Pe - Ta a 15 2$81201/2801801 . 2 ts ~ < 2: I 1 4.0 - a2 = G 2 10 & pe} & d a by a 8 01 8 6 2 8 S& j2sp1201/2501801 3 (For PNP, minus sign is omitted.) 2 -" - oo: | 2et2gtone Pulse 08 No heat sink 1.0 10 100 0 20 40 60 80 mM 120 140 160 Collector to Emitter Voltage, Ve; Ambient Temperature,Ta C M@ No products described or contained herein are intended fer use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. M@ Anyone purchasing any products described or contained herein for an above-mentioned use shall: @ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. M@ Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are Made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.2112-4/4