C106A1 C106B1 C106C1 C106D1 C106E1 C106M1 w w w. c e n t r a l s e m i . c o m SILICON CONTROLLED RECTIFIER 4 AMP, 100 THRU 600 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR C106A1 series are PNPN silicon controlled rectifiers designed for applications such as temperature, light, speed control, process and remote control, and warning systems where reliability of operation is important. MARKING: FULL PART NUMBER TO-202 CASE MAXIMUM RATINGS: (TC=25C unless otherwise noted) C106 C106 C106 C106 C106 SYMBOL A1 B1 C1 D1 E1 Peak Repetitive Off-State Voltage VDRM, VRRM 100 200 300 400 500 RMS On-State Current IT(RMS) 4.0 Peak One Cycle Surge (60Hz) ITSM 20 I2t Value for Fusing (t>1.5ms) I2t 0.5 Peak Gate Power PGM 0.5 Average Gate Power PG(AV) 0.1 Peak Forward Gate Current IGFM 0.2 Peak Reverse Gate Voltage VGRM 6.0 Storage Temperature Tstg -40 to +150 Junction Temperature TJ -40 to +110 Thermal Resistance JC 3.0 Thermal Resistance JA ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IRRM Rated VDRM, VRRM, RGK=1.0K IDRM, IRRM Rated VDRM, VRRM, RGK=1.0K, TC=110C VTM IFM=4.0A IGT VAK=6.0V, RL=100, RGK=1.0K IGT VAK=6.0V, RL=100, RGK=1.0K, TC=-40C VGT VAK=6.0V, RL=100, RGK=1.0K 0.4 0.5 VGT VAK=6.0V, RL=100, RGK=1.0K, TC=-40C VGT VAK=Rated VDRM, RL=3.0K, RGK=1.0K, TC=110C 0.2 IHX VD=12V, RGK=1.0K 0.3 IHX VD=12V, RGK=1.0K, TC=-40C 0.4 IHX VD=12V, RGK=1.0K, TC=110C 0.14 ILX VD=12V, RGK=1.0K 0.3 ILX VD=12V, RGK=1.0K, TC=-40C 0.4 dv/dt VD=Rated VDRM, RGK=1.0K, TC=110C tgt (turn-on time) tq (turn-off time) C106 M1 UNITS 600 V A A A2s W W A V C C C/W 75 C/W TYP MAX 10 100 2.2 200 500 0.8 1.0 3.0 6.0 2.0 4.0 8.0 8.0 1.2 40 UNITS A A V A A V V V mA mA mA mA mA V/s s s R1 (23-January 2012) C106A1 C106B1 C106C1 C106D1 C106E1 C106M1 SILICON CONTROLLED RECTIFIER 4 AMP, 100 THRU 600 VOLTS TO-202 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode 3) Gate Tab is common to pin 2 MARKING: FULL PART NUMBER R1 (23-January 2012) w w w. c e n t r a l s e m i . c o m