28D1418 Silicon NPN Epitaxial HITACHI Application e Low frequency power amplifier e Complementary pair with 2SB1025 Outline UPAK 1. Base 2. Collector 3. Emitter 4, Collector (Flange) 925 2SD1418 Absolute Maximum Ratings (Ta = 25C) litem Symbol Ratings Unit Collector to base voltage Voge 120 Vv Collector to emitter voltage Voeo 80 Vv Emitter to base voltage Veo 5 Vv Collector current I, 1 A Collector peak current icpeak) 2 A Collector power dissipation P,** 1 WwW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Notes: 1. PW <10 ms, Duty cycle < 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25C) Item Symbo! Min Typ Max Unit Test conditions Collector to base breakdown = Viagycag =: 120 _ Vv 1, =10pA, I. =0 voltage Collector to emitter breakdown Viamces 80 _ Vv 1, = 1mA, Rg, = voltage Emitter to base breakdown Vieneso | 8 _ Vv = 10pA,1,=0 voltage Collector cutoff current - lego _ _ 10 pA Vop= 100 V,1,=0 DC current transfer ratio he 460 320 Veg 5 V, l= 150 mA Ares 30 _ Vee= 5 V, i, = 500 mA? Collector to emitter saturation Vegan 1 V i = 500 mA, |, = 50 mA voltage Base to emitter voltage Ver - 1.5 V Voe= 5 V, |, = 150 mA*? Gain bandwidth product f= 140 MHz Voe= 5 V, Io = 150 mA Collector output capacitance Cob 12 pF Vog = 10 V, 1, = 0, f= 1 MHz Notes: 1. The 28D1418 is grouped by h,,, as follows. 2, Pulse test Mark DA DB pc Rees 60 to 120 100 to 200 =: 160 to 320 HITACHI 926 2SD1418 Maximum Collector Dissipation Curve Typical Output Characteristics 927 1.2 : = 2 | os < | oo c ! 2 08 < | a & | ae o ! o o o Qo 5 _s 2 SE 53 04 & * 5 55 8 : eas 5SmA 3 , | | lez | 0 50 100 150 0 2 4 6 8 10 Ambient Temperature Ta (C) Collector to Emitter Voltage Voge (V) Typical Transfer Characteristics DC Current Transfer Ratio vs. Collector Current | 500 300 | cE=5V Voe=5V 200 wi { ( = & 250 az = 100 2 2 59 & 200 2 wv a = 20 5 150 5 10 = g & 100 o : 50 i 2 8 ! { 0 0.2 04 O06 08 1.0 1 3 10 30 100 300 1,000 Base to Emitter Voltage Vge (V) Collector Current I, (mA) HITACHI 2SD1418 Saturation Voltage vs. Collector Current > 06,7, 1.2 < = iw | 8 ulse & 0.5 i 1.0 > D> QD = o4t 8 08 > oO < > 2 c L 0.3 5 0.6 a a s S 02+ % 04 = z= ce a 2 01} 's 02 8 g Vee (sat) 5 a o o* 0 1 3 10 30 100 6300) =1,000 Collector Current Io (mA) Gain Bandwidth Product vs. Collector Current Collector Output Capacitance vs. Collector to Base Voltage 240 = ~~ 200 a yee . 6 f=1MHz = 200 g 100 -!e=0 ~ Oo = = 160 3 50 3 8 a 120 2 20 oO 2 5 = 80 B 10 2 5 & 5 & 40 2 5 SS a 3 0 Oo 2 10 30 100 300 1,000 1 2 5 10 20 50 100 Collector Current I (mA) Collector to Base Voltage Veg (V) HITACHI 928