FQD5N60C / FQU5N60C
FQD5N60C / FQU5N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
2.8A, 600V, RDS(on) = 2.5 @VGS = 10 V
Low gate charge ( typical 15 nC)
Low Crss ( typical 6.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
Symbol Parameter FQD5N60C / FQU5N60C Units
VDSS Drain-Source Voltage 600 V
IDDrain Current - Continuous (TC = 25°C) 2.8 A
- Continuous (TC = 100°C) 1.8 A
IDM Drain Current - Pulsed (Note 1) 11.2 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 210 mJ
IAR Avalanche Current (Note 1) 2.8 A
EAR Repetitive Avalanche Energy (Note 1) 4.9 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD
Power Dissipation (TA = 25°C)* 2.5 W
Power Dissipation (TC = 25°C) 49 W
- Derate above 25°C 0.39 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TLMaximum lead temperature for soldering purposes,
1/8" from case for 5 seconds 300 °C
Symbol Parameter Typ Max Units
RθJC Thermal Resistance, Junction-to-Case - 2.56 °C/W
RθJA Thermal Resistance, Junction-to-Ambient* - 50 °C/W
RθJA Thermal Resistance, Junction-to-Ambient - 110 °C/W
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S
D
G
I-PAK
FQU Series
D-PAK
FQD Series GSD
GS
D
October 2008
QFET
®
RoHS Compliant
©2008 Fairchild Semiconductor Internationa Rev. A1, October 2008
Rev. A1, October 2008©2008 Fairchild Semiconductor Corporation
FQD5N60C / FQU5N60C
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 4.5A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA600 -- -- V
BVDSS
/ TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C -- 0.6 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 µA
VDS = 480 V, TC = 125°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Volt age VDS = VGS, ID = 250 µA2.0 -- 4.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 1.4 A -- 2.0 2.5
gFS Forward Transconductance VDS = 40 V, ID = 1.4 A ( Note 4) -- 4.7 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 515 670 pF
Coss Output Capacitance -- 55 72 pF
Crss Reverse Transfer Capacitance -- 6.5 8. 5 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 300 V, ID = 4.5A,
RG = 25
(Note 4, 5)
-- 10 30 ns
trTurn-On Rise Time -- 42 90 ns
td(off) Turn-Off De l a y Time -- 38 85 ns
tfTurn -Off Fa ll Time -- 4 6 100 ns
QgTotal Gate Cha rge VDS = 480 V, ID = 4.5A,
VGS = 10 V
(Note 4, 5)
-- 15 19 nC
Qgs Gate-Source Charge -- 2.5 -- nC
Qgd Gate-Drain Charge -- 6.6 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 2.8 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 11.2 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = 2.8 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, I S = 4.5 A,
dIF / dt = 100 A/µs (Note 4)
-- 300 -- ns
Qrr Reverse Recovery Charge -- 2.2 - - µC
Rev. A1, October 2008©2008 Fairchild Semiconductor Corporation
FQD5N60C / FQU5N60C
0.2 0.4 0.6 0.8 1.0 1.2 1.4
10-1
100
101
150$
% N o tes :
1. VGS = 0V
2. 25 0&s P ulse T e s t
25$
IDR, Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
0481216
0
2
4
6
8
10
12
VDS = 300V
VDS = 120V
VDS = 480V
% Note : ID = 4.5A
VGS, Gate-Source Voltage [V]
QG, T otal Ga t e Cha r g e [nC]
0246810
0
1
2
3
4
5
6
VGS = 20V
VGS = 10V
% No te : TJ = 25$
RDS(ON) ['],
D rain-Source On -Resistance
ID, Drain Current [A]
Typical Characteristics
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
10-1 100101
0
200
400
600
800
1000 Ciss = C gs + C gd (Cds = shorted)
Coss = Cds + Cgd
Crss = C gd
% N ote s ;
1. VGS = 0 V
2. f = 1 M Hz
Crss
Coss
Ciss
Capa citance [pF]
VDS, Drain-Source V oltage [V]
10-1 100101
10-2
10-1
100
101 VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Botto m : 4.5 V
% Note s :
1. 250 &s Pu lse Test
2. TC = 25$
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
246810
10-1
100
101
150oC
25oC
-55oC
% Notes :
1. VDS = 40V
2. 250&s Pulse Test
ID, Drain Current [A]
VGS, Gate-Source Voltage [V]
Rev. A1, October 2008©2008 Fairchild Semiconductor Corporation
FQD5N60C / FQU5N60C
Typical Characteristics (Continued)
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs Case Temperature
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
% N o tes :
1. VGS = 0 V
2. ID = 250 &A
BV DSS , (N ormalized)
Drain-Source Breakdow n Voltage
TJ, Junction Tem perature [oC]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
% N o te s :
1 . V GS = 10 V
2 . ID = 1.4 A
RDS(ON) , (Normalized)
Drain-Source O n-Resistance
TJ, Junction Temperature [oC]
Figure 11. Transient Thermal Response Curve
10-5 10-4 10-3 10-2 10-1 100101
10-1
100% N ote s :
1 . Z(JC(t) = 2 .56 $/W M a x .
2 . Duty F ac tor, D=t1/t2
3 . TJM - T C = PDM * Z(JC(t)
s in gle puls e
D=0.5
0.02
0.2
0.05
0.1
0.01
Z(JC
(t), T herm al R esponse
t1, Sq u are W a v e Puls e Du ra tio n [s e c ]
t1
PDM
t2
100101102103
10-2
10-1
100
101
100 m s
10 µs
DC
10 m s
1 ms100 µs
O p e r a tion in Th is A rea
is Limited b y R DS(on)
% Note s :
1. T C = 2 5 oC
2. T J = 1 50 oC
3. S in g le Pu ls e
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Figure 7. Breakdown Voltage Variation
vs Temperature
25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
ID, Drain Current [A]
TC, Case Tem perature [$
]
Figure 8. On-Resistance Variation
vs Temperature
Rev. A1, October 2008©2008 Fairchild Semiconductor Corporation
FQD5N60C / FQU5N60C
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
Charge
VGS
10V Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50K)
200nF
12V
Same Type
as DUT
Charge
VGS
10V Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50K)
200nF
12V
Same Type
as DUT
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS RL
DUT
RG
VGS
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
Rev. A1, October 2008©2008 Fairchild Semiconductor Corporation
FQD5N60C / FQU5N60C
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS dv/dt controlled by RG
•I
SD con troll ed by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS dv/dt controlled by RG
•I
SD con troll ed by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
Rev. A1, October 2008©2008 Fairchild Semiconductor Corporation
FQD5N60C / FQU5N60C
Dimensions in Millimeters
Mechanical Dimensions
D - PAK
Rev. A1, October 2008©2008 Fairchild Semiconductor Corporation
FQD5N60C / FQU5N60C
Mechanical Dimensions
Dimensions in Millimeters
I - PAK
FQD5N60C / FQU5N60C
FQD5N60C / FQU5N60C Rev. A1www.fairchildsemi.com
Rev. I37
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