b> CQew + LINE No. Vv - - #- SYMBOLS & CODES COMMON TO MORE THAN ONE TECH New Type Revised Specifications Non-JEDEC type manufactured outside U'S.A. TYPE No. SYMBOLS & CODES EXPLAINED Switching type, also listed in Section 12 Chopper, also listed in Section 13, Category 10 These types also included elsewhere with other characteristics. See Type No. Cross Index for alternate line number. Radiation Resistant Devices, also listed in Section 13, Category 13. ICAL SECTION wo fa, Gain bandwidth product (f-) Maximum frequency of oscillation Figure of merit (frequency for unity power gain) Minimum Maximum I Charge storage time constant Stored base charge picocoulomb Total switching time Ton = t + ty Typical Value ee Tort = ts + ty Typical Value Ton + Tote =td+ tr + tf + ts LINE No. TYPE No. [2] RISE [DELAY TIME | TIME STRUCTURE (Atl Sections A Alloy Except 6 & 7} AN Annular D Diffused or drift DM - Diffused mesa E Epitaxial EA -~ Epitaxial annular EM Epitaxial mesa F Fused G Grown GA Gallium Arsenide H Hometaxial MA -- Mico alloy MD Micro alloy diffused ME - Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alloy diffused PE Planar epitaxial PL Planar s Surface barrier to Matched pair ~ Switching, other uses Chopper, other uses Noise figure 8db or below Plastic package ~ Overlay * THESE TYPES ALSO INCLUDED ELSEWHERE WITH OTHER CHARACTERISTICS SEE TYPE NO. CROSS INDEX FOR ADDITIONAL PAGE & LINE NO. Pulsed Minimum Maximum Available to selected range narrower than indicated - Yes in millimho (FETs only). Bias values are Vos & 'b . | Cob SAT. xX Tt - "bp rbb PP +him vw 24 NP Cob |N-NPN i A|TEMP: T OWG. No. ormr moo Ge Germanium Si Siticon Tetrode NPN or N Channel PNP or P Channel Field Effect Transistor Radiation Resistant Device (See above also) D With infinite heat sink Following symbols indicate temperature at which derating starts: f - 40c 70 * ~ 45C $- 100C or greater # 50C @ 80C ~ 60C A- Pulsed A ~- Maximum $ ~ Cob - Ron (FETs only) # Pulsed - Coes (FET's only} SISTORS A Ambient Cc Case J Junction Ss Storage DESCRIPTION a 1 Avalanche Mode 10 - 2 Bi-directional 11 - Unmatched Ge Germanium 3 Field Effect Composite (Dual) Si Silicon 4 Hook Collector 12 Cryogenic 5 ~ Complementary 13 Radiation Symmetry (PNP & Resistant Devices NPN) Matched Pair 14 Pressure Sensitive N -~ NPN or N Channel See TECHNICAL TERM DEFINITIONS Section | 6 Matched Pair 15 Transistor chips P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)4 IN ORDER OF (1) CATEGORY & (2} TYPE No. 13. MISCELLANEOUS TRANSISTORS " a (2 | 1|CATEGORY | MiIDWG #/L C LINE TYPE U|STRUC- AlY200 [EO DESCRIPTION No. No. S| TURE T\ s/a AD E $0200 DE er, 1 |[JAN2N494 9 1P-N Si [R33 Pc. 45W max;VE-60V max;ISR-.75 max;RBBO-6.8k 2 max. 2 |2N2213 9iP Si Pc-.45W; Rbb-9.1 ohms max; VB2B1- 40V; VB2E-60V. 3 |2N2307 9 iP Si_| R86 Pc-250mW;Rbb-9.1kohms_max;!p-2.0A_m 4 |2N3406 9|/P Si [R33 Pc-.45W;VB2E-60V max;VB2B1-70V max; eVEBT(SAT- 5.0V max;lV-8mA max. 5 2N3482 9/P Si [R33 Pc.40W;RBBO 6.8kohms max; n .62max;tV 4.0mA min; IP2.0uUA max. 6 {2N3679 9 IP Si_|L7a Pt-250mW,ISR-.80 max;RBBO-9.1Kohms maxiiv-4.2mA_ min;VOB1-4.0V_ min. 7# |2SH22 QIN Si [TO18 |CB [Pt 200mW:n .85 max;RBB 4.0kOhms min IV 4.0mA min;IP 4.0uA min. 8 |SB24 g/P Si TOS P-450mW; ISR-.47 min; Ip-25uA max:lv-8.0mA min;IB2 Mod.-6.8-30 9 15825 9 IP Si (TOS P.450mW:; 1SR-.47 min; [p-25uA max; lv-8.0mA_ min;}B2 Mod.-6.8-30 10 = |5C28 9 jNP Si |TO18 Pc-.30W; ISR-.75 max; Rb1b2-12K ohms; IV-8.0mA min; Ip-2OmA max. 11 C29 9 NP Si [TO18 Pc-.30W; ISR-.86 max; Rb1b2-12K ohms; IV--20mA min; Ip-12mA max. 12 ~|5C30 9 INP Si_ |TO18 Pc-.30W; ISR-.75 max; Rb1b2-12K ohms; IV-.20mA_ min; Ip-12mA max. 13 |SE29 9 TO18 Ip-25uA max;lv-4.0mA min;IEO-12uA;N-.68 min., .82 max. 14 G514 9 TO18 {p-25uA max:iv-8.0mMA min:IEO-12UA;N-.47 min., .62 max. 15 5G515 9 TO18 Ip-25uA max;lv-8.0mA_ minJEO-12uA;N-.47 min, .62 max. 16 (/5G516 9 TO18 Ip-6.0uA max;lv-8.0mA min;IEO-.20uA;N-.47 min., .62 max. 17# |70T2 9 Si |RO141C} A jlp-25uA max;IV-25ma max;N-.47 to .85;RBBO-4.0 to 12kohms. 18 (|551B QIN Si |TO18 Pc-.45W,ISR-.62_ max;Rb1b2-6.8K_ ohmsilv.20ma minjlp-2.0ma_ max. 19 BB3 9 Si jTOS Pt-450mW;RBB-10k max;VBB-35V max;n-62 max. 20 BB4A 9 Si |TO5 Pt-450mW;RBB-10k9 max;VBB-35V max;n-78 max. 21 BB4B 9 Si |TO5 Pt-450mW;RBB-10k9. max;VBB-35V_ max;n-78 max. 22 ~=|BBS 9 Si [TOS Pt-450mW;RBB-12k9 max;VBB-60V max:n-75 max. 23 =|BB5A 9 Si |TO5 Pt-450mW;RBB-12k0Q max;VBB-60V max:n-62 max. 24 |BB5B 9 Si |TOS Pt-450mW;RBB-12kN_ max;VBB-60V_max;n-68 max. 25 = |BB5C 9 Si [TOS Pt-450mW:RBB-12kQ max;VBB-60V max;n-75 max. 26# |BSS58A 9 t Si }u100 CF |Programmable;lp 150nA max at RG 1.0MQ:lv 25uA min at RG 1.0MN. 27# |BSS58B 9 t $i_|ut00 CF_|Programmable;lp_2.0uA max at RG_1.0MQ;lv 50uA min at RG 1.0MQ. 28# |BSV56A 9 iP Si |R33b CC IRBB 4.7kN miniip 6.0uA maxilv 4.0mA min;Pd 400mWi Intrinsic standoff ratio .56 to .75 29+ |BSV568 9/P Si |R33b CC |RBB 4.7k2 minjlp 6.0uA max:tlv 4.0mA min:Pd 400mW, Intrinsic standoff ratio .68 to 82 30# |BSV56C g ip Si_|R33b CC_ IRBB 4.0k2 miniip 25uA maxilv 4.0mA min:Pd 400mWi Intrinsic standoff ratio .47 to 82 31# |[BSV57A 9 PT Si [u100 CB /RBB 4.7k92 min:stp 6.0uA maxjlv 4.0mA min;Pd 300mW, Intrinsic standoff ratio .56 to .75 32# |BSV57C 9 /Pt Si |u100 CB |RBB 4.0kQ miniiIp 25uA max;lv 4.0mA min;Pd 300mW; Intrinsic standoff ratio .47 to 82 33 BSV58A 9 |P Si_|R159 CF |Programmablejp .15uA max at RG 1.OMQjlv 25uA min at RG 1.0MQ. 34# /BSV58B 9IP $i (R159 {CF |[Programmable;ip 2.0uA max at RG 1.OMQ:lv 50uA min at RG 1.0MQ. 35 |DSE29 9|N Si |R33a CA |Pt-.30W;RBB-9.1k92 max:IV-25mA max;n-.82 max;lp-25uA max. 36 |D5E35 9 IN $i_|R33a CA_|Pt-.30W:RBB-9.1k9 max;!V-10mA typ;n-.82 max. 37 D5E36 9IN Si [R33a CA |Pt-. 30W:RBB-9.1k2 max;IV-10mA typ;n-.82 max. 38 D13K1 gIP Si |TO18 Programmable;Pt 250mW:lv 50uA max:ip 2.0uA max;Vf 1.5V max. 39 D13K2 9 |P Si_|TO18 Programmabie;Pt 250mW.lv 25uA maxip 150nA max;Vf 1.5V_ max. 40 |D13K3 9/P Si [TO18 Programmable;Pt 250mW;lv 50uA max;lp 300nA max;Vf 1.5V max. 41# |ST504 9/P Si |TO72 [CA |Pt-500mW:VB2E-30V;VBB-20V;lv-5O0mA max;fab-200kHz. 42+ |TAM93 9 INPN TOS Dual 2N930;10% hFE match:5.OmV VBE match;hFE at 10uA-50 min. 43 |/TISO1 Q9IP Si |X20a Pc-. 30WISR-.75 max;RBB-9.1Kohms max;lp-5.0uA max. 44 =|TISO2 9 /P Si |X20a Pc-.30W;ISR-.82 max;RBB-9.1Kohms max;ip-2.0uA max. 45 |2N2183 10 |P Si |TQ1 Pc- 150mW;VCBO-15V_max;VCEO-10V max,VEBO-15V_ max:Voff-3mV_