AH128-89 - TriQuint Semiconductor

Specifications and information are subject to change without notice

TriQuint Semiconductor Inc • Phone 1-503-615-9000• FAX: 503-615-8900 • e-mail: info- s ales@tqs.com • Web site: www.TriQuint.com Page 1 of 14 June 2010

AH128

¼W High Linearity InGaP HBT Amplifier

Product Features

• 60 – 3500 MHz

• +25 dBm P1dB

• +40 dBm Output IP3

• 16.9 dB Gain @ 2140 MHz

• 115 mA current draw

• +5V Single Supply

• MTTF > 100 Years

• Lead-free/Green/RoHS-compliant

SOT-89 Package

Applications

• Repeaters

• Mobile Infrastructure

• WiMAX / WiBro

• LTE / WCDMA / EDGE / CDMA

Product Description

The AH128 is a high dynamic range driver amplifier in a

low-cost surface mount package. The InGaP/GaAs HBT is

able to achieve high performance across a broad range with

+40 dBm OIP3 and +25 dBm of compressed 1dB power

while drawing 115 mA current. The AH128 is available in

a lead-free/green/RoHS-compliant SOT-89 package. All

devices are 100% RF and DC tested.

The AH128 is targeted for use as a driver amplifier in

wireless infrastructure where high linearity, medium power,

and high efficiency are required. Internal biasing allows

the AH128 to maintain high linearity over temperature and

operate directly off a single +5V supply. This combination

makes the device an excellent candidate for transceiver line

cards in current and next generation multi-carrier 3G base

stations.

Functional Diagram

RF IN GND RF OUT

GND

1 23

Function Pin No.

RF Input 1

RF Output / Vcc 3

Ground 2, 4

Specifications

Parameter Units Min Typ Max

Operational Bandwidth MHz 60 3500

Test Frequency MHz 2140

Gain dB 14.5 16.9 18

Input Return Loss dB 15

Output Return Loss dB 11

W-CDMA Channel Power(2)

-50 dBc ACLR, 2140 MHz dBm +15

Output P1dB dBm +25

Output IP3(3) dBm +36 +40

Noise Figure dB 4.6

Quiescent Collector Current mA 95 115 130

Device Voltage V +5

1. Test conditions unless otherwise noted: 25ºC, Vsupply = +5 V, in tuned application circuit.

2. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB @ 0.01% Probability, 3.84 MHz BW

3. OIP3 is measured with two tones separated by 1 MHz. The suppression on the largest IM3 product

is used to calculate the OIP3 using a 2:1 rule. Measured at 13 dBm/tone for 900 MHz, 11 dBm/tone

for 1960 MHz and 10 dBm/tone for 2140 MHz.

Absolute Maximum Ratings

Parameter Rating

Storage Temperature -65 to +150 °C

RF Input Power, CW, 50 Ω, T=25°C Input P10dB

Device Voltage +6 V

Max Junction Temperature, TJ

For 106 hours MTTF 200 °C

Thermal Resistance, ΘJC 116 °C / W

Operation of this device above any of these parameters may cause permanent damage.

Typical Performance

Parameter Units Typical

Frequency MHz 920 1960 2140

Gain dB 19.7 17.6 16.9

Input Return Loss dB 12 15 15

Output Return Loss dB 8.2 11 11

W-CDMA Channel Power(2)

-50 dBc ACLR dBm +15 +15.5 +15

Output P1dB dBm +24.7 +25.5 +25

Output IP3(3) dBm +40 +40 +40

Noise Figure dB 4.6 4.6 4.6

Quiescent Collector Current mA 115

Device Voltage V +5

Ordering Information

Part No. Description

AH128-89G ¼ W High Linearity InGaP HBT Amplifier

AH128-89PCB900 869-960 MHz Evaluation Board

AH128-89PCB1960 1930-1990 MHz Evaluation Board

AH128-89PCB2140 2110-2170 MHz Evaluation Board

AH128-89PCB2600 2500-2700 MHz Evaluation Board

Standard T/R size = 1000 pieces on a 7” reel.

Specifications and information are subject to change without notice

TriQuint Semiconductor Inc • Phone 1-503-615-9000• FAX: 503-615-8900 • e-mail: info- s ales@tqs.com • Web site: www.TriQuint.com Page 2 of 14 June 2010

AH128

¼W High Linearity InGaP HBT Amplifier

Typical Device Data

S-Parameters (VDevice = +5 V, ICC = 115 mA, 25 °C, unmatched 50 ohm system)

Notes:

The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that

actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the red line.

S-Parameters (VDevice = +5 V, ICC = 115 mA, 25 °C, unmatched 50 ohm system, calibrated to device leads)

Freq (MHz) S11 (dB ) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)

50 -5.38 -173.57 22.87 166.30 -30.49 4.94 -12.66 -146.31

100 -4.89 -176.21 21.96 165.00 -30.37 2.12 -11.24 -162.50

300 -4.91 -175.57 21.84 151.04 -30.66 -0.34 -11.69 -161.87

500 -3.95 -175.05 21.01 130.39 -30.54 1.26 -9.18 -156.72

700 -3.10 -179.25 19.51 114.04 -30.06 -1.57 -7.38 -162.95

900 -2.51 175.19 18.02 102.07 -29.47 -3.23 -6.59 -171.09

1100 -2.25 170.64 16.77 92.59 -29.27 -7.07 -6.09 -178.21

1300 -2.12 165.24 15.56 84.05 -29.04 -9.77 -5.69 175.48

1500 -2.01 160.47 14.47 76.48 -28.75 -12.83 -5.57 170.50

1700 -2.01 156.16 13.46 69.77 -28.78 -16.94 -5.59 165.41

1900 -1.92 150.48 12.74 63.07 -28.52 -20.19 -5.46 159.78

2100 -1.84 145.43 11.87 56.47 -28.43 -24.12 -5.36 154.06

2300 -1.76 141.16 11.08 50.21 -28.64 -26.71 -5.26 150.23

2500 -1.73 137.11 10.51 45.46 -28.47 -29.12 -5.54 146.96

2700 -1.69 131.81 10.11 39.00 -28.22 -33.92 -5.63 140.38

2900 -1.74 127.64 9.60 33.91 -27.96 -37.08 -5.41 135.33

3100 -1.83 121.13 9.17 27.49 -28.09 -40.84 -5.37 131.92

3300 -1.90 115.79 8.52 22.19 -28.02 -43.96 -5.63 129.40

3500 -1.90 112.40 8.12 16.48 -28.00 -46.34 -5.73 121.96

Device S-parameters are available for download off of the website at: http://www.TriQuint.com

Application Circuit PCB Layout

Circuit Board Material: .062” total thickness with a .014” FR4 top RF layer, 4 layers (other layers

added for rigidity), 1 oz copper, εr = 4.3, Microstrip line details: width = .031”, spacing = .035”

Specifications and information are subject to change without notice

TriQuint Semiconductor Inc • Phone 1-503-615-9000• FAX: 503-615-8900 • e-mail: info- s ales@tqs.com • Web site: www.TriQuint.com Page 3 of 14 June 2010

AH128

¼W High Linearity InGaP HBT Amplifier

700-800 MHz Reference Design

802.16-2004 O-FDMA, 64QA M-1/2, 1024-FFT, 20 sy mbols and 30 subchannels, 5 MH z Carrier B W

Typical O-FDMA Performance at 25°C

Frequency (MHz) 700 750 800 Units

Gain 20.9 20.7 20.4 dB

Input Return Loss 15.7 19.6 16 dB

Output Return Loss 8.9 7.6 6.6 dB

EVM

Pout=+16 dBm 1.8 1.6 1.5 %

Output P1dB +24.3 +24.4 +24.6 dBm

Output IP3

Pout=+15 dBm/tone, 1MHz spacing +38.5 +39.7 +40.2 dBm

Quiescent Current, Icq 115 mA

Vcc +5

C10

L2 R2

Notes:

1. The primary RF microstrip line is 50 Ω.

2. Components shown on the silkscreen but not on the schematic are not used.

3. 0 Ω jumpers can be replaced with copper trace in target application.

4. The edge of R1 is placed 105 mils from the AH128 RFin pin. (4.4o @ 750 MHz)

5. The edge of L2 is placed 40 mils from the edge of R1. (1.7o @ 750 MHz)

6. The edge of L3 is placed 135 mils from the AH128 RFout pin. (5.6o @ 750 MHz)

7. The edge of C9 is placed 75 mils from the edge of L3. (3.1o @ 750 MHz)

Gain vs. Frequency

T=25°C

700 720 740 760 780 800

Frequency (MHz)

Gain (dB)

Return Loss

T=25°C

-30

-25

-20

-15

-10

-5

700 720 740 760 780 800

Frequency (GHz)

S11, S22 (dB)

S11 S22

8 1012141618

EVM (%)

Output Power (dBm)

EVM vs. Output Average Power vs. Frequency

T=25°C

700 MHz 750 MHz 800 MHz

802.16-2004 O-FDMA, 64QAM-

1/2, 1024-FFT, 20 symbols and 30

subchannels, 5 MHz Carrier BW

Current vs Output Average Power vs. Frequency

T=25°C

100

120

140

160

180

14 15 16 17 18 19

Output Power (dBm)

Collector Current (mA)

700 MHz 750 MHz 800 MHz

802.16-2004 O-FDMA, 64QAM-1/2,

1024-FFT, 20 symbols and 30

subchannels, 5 MHz Carrier BW

ACLR vs. Output Average Power vs. Frequency

T=25°C

-60

-55

-50

-45

-40

-35

10 12 14 16 18 20

Output Power (dBm)

ACLR (dBc)

700 MHz 750 MHz 800 MHz

W-CDMA 3GPP Test M odel 1+64 DPCH

PAR = 9.7 dB @ 0.01% Probability

3.84 MHz BW

OIP3 vs. Output Power /Tone vs. Frequency

T=25°C

8 1012141618

Output Power/Tone (dBm)

OIP3 (dBm)

700 MHz 750 MHz 800 MHz

Specifications and information are subject to change without notice

TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-s ales@tqs.com • Web site: www.TriQuint.com Page 4 of 14 June 2010

AH128

¼W Hi

h Linearit

InGaP HBT Am

lifier

869-960 MHz Reference Design (AH128-89PCB900)

W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB @ 0.01% Probability, 3.84 MHz BW

Typical W-CDMA Performance at 25°C

Frequency (MHz) 869 920 960 Units

Gain 19.8 19.7 19.6 dB

Input Return Loss 10 12 13 dB

Output Return Loss 8.8 8.2 7.9 dB

ACLR

Pout=+15 dBm -49 -50 -50 dBc

Output P1dB +24.4 +24.7 +24.6 dBm

Output IP3

Pout=13dBm/tone, 1MHz spacing +39 +40 +41 dBm

Noise Figure 4.7 4.6 4.6 dB

Quiescent Current, Icq 115 mA

Vcc +5 V

Notes:

1. The primary RF microstrip line is 50 Ω.

2. Components shown on the silkscreen but not on the schematic are not used.

3. 0 Ω jumpers can be replaced with copper trace in target application.

4. The edge of R2 is placed at 285 mils from AH128 RFout pin. (14o @ 920 MHz)

5. The edge of C9 is placed against the edge of R2.

6. The edge of R1 is placed at 100 mils from AH128 RFin pin. (5o @ 920 MHz)

7. The edge of C10 is placed 260 mils from the edge of R1. (13o @ 920 MHz)

0.84 0.86 0.88 0.90 0.92 0.94 0.96 0.98

Gain (dB)

Frequency

(GHz)

Gain v s. Freque ncy

+85°C +25°C -40°C

-25

-20

-15

-10

-5

0.84 0.86 0.88 0.90 0.92 0.94 0.96 0.98

S1 1 (dB )

Frequency

(GHz)

Return Loss

+85°C +25°C -40°C

-25

-20

-15

-10

-5

0.84 0.86 0.88 0.90 0.92 0.94 0.96 0.98

S22 (dB)

Frequency

(GHz)

Return Loss

+85°C +25°C -40°C

-40 -15 10 35 60 85

Gai n (d B)

Tem purature (°C)

Gain vs. Tem perature vs Frequency

869 MHz 920 MHz 960 MHz

100

110

120

130

140

150

160

12 14 16 18 20 22 24

Collector Current (mA)

Output P ower (dBm)

Current vs Ou t pu t Average Pow er vs . F requ enc y

T=25°C

869 MHz 920 MHz 960 MHz

0.86 0.88 0.90 0.92 0.94 0.96

P1dB (dBm)

Frequency (GHz)

P1dB vs. Frequency vs. Temperature

+85°C +25°C -40°C

0123456

Output Power (dBm)

Input P ower (dBm)

Outp ut Average Power vs Inpu t Average Power

T=25°C

869 MHz 920 MHz 960 MHz

-65

-60

-55

-50

-45

-40

10 12 14 16 18

ACLR (dBc)

Output Powe r (dBm)

ACLR vs. Output Average Power vs. Frequency

T=25°C

869 MHz 920 MHz 960 MHz

W‐CDMA3GPPTestModel1+64DPCH

PAR=10.3dB@0.01%Probability

3.84MHzBW

-65

-60

-55

-50

-45

-40

10 12 14 16 18

ACLR (dBc)

Output Powe r (dBm)

ACLR vs. Output Average Power vs. Temperature

f= 920 MH z

+85°C +25°C -40°C

W‐CDMA3GPPTestModel1+64DPCH

PAR=10.3dB@0.01%Probability

3.84MHzBW

Specifications and information are subject to change without notice

TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-s ales@tqs.com • Web site: www.TriQuint.com Page 5 of 14 June 2010

AH128

¼W Hi

h Linearit

InGaP HBT Am

lifier

869-960 MHz Reference Design (AH128-89PCB900)

W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB @ 0.01% Probability, 3.84 MHz BW

0.86 0.88 0.90 0.92 0.94 0.96

NF (dB)

Frequency (GHz)

Noise Figure vs. Frequency vs. Temperature

+85°C +25°C -40°C

8 9 10 11 12 13 14 15 16

OIP3 (dBm)

Output P ower/ T one (dBm)

OIP3 vs. Output Power/Tone vs. Temp erature

f=920 MHz, 1 MHz spacing

+85°C +25°C -40°C

8 9 10 11 12 13 14 15 16

OIP3 (dBm)

Output P ower/ T one (dBm)

OIP3 vs. Output Power/Tone vs. Frequency

T=25°C, 1 MHz spacing

869 MHz 920 MHz 960 MHz

0.86 0.88 0.90 0.92 0.94 0.96

OIP3 (dBm)

Frequency (GHz)

OIP3 vs. Frequency

T=25°C, 1 MHz spacing, 14 dBm/tone

Specifications and information are subject to change without notice

TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-s ales@tqs.com • Web site: www.TriQuint.com Page 6 of 14 June 2010

AH128

¼W Hi

h Linearit

InGaP HBT Am

lifier

1805-1880 MHz Reference Design

W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB @ 0.01% Probability, 3.84 MHz BW

Typical Performance at 25°C

Frequency (MHz) 1805 1842 1880 Units

Gain 18.1 18.1 18.0 dB

Input Return Loss 13.3 14.5 13.5 dB

Output Return Loss 10.6 11.1 11.6 dB

ACLR

Pout=+15 dBm -48.5 -48.1 -48.2 dBc

Output P1dB +24.7 +24.8 +24.7 dBm

Output IP3

Pout=13dBm/tone, 1MHz spacing +39.2 +39.0 +39.8 dBm

Quiescent Current, Icq 115 mA

Vcc +5

Notes:

1. The primary RF microstrip line is 50 Ω.

2. Components shown on the silkscreen but not on the schematic are not used.

3. 0 Ω jumpers can be replaced with copper trace in target application.

4. The edge of C9 is placed at 310 mils from AH128 RFout pin. (48.8 o @ 1842 MHz)

5. The edge of R1 is placed at 100 mils from AH128 RFin pin. (15.7 o @ 1842 MHz)

6. The edge of C10 is placed 150 mils from the edge of R1. (23.6 o @ 1842 MHz)

1.7 1.75 1.8 1.85 1.9 1.95 2

Gain (dB)

Frequency (GHz)

Gain vs. Frequency

T=25

-20

-15

-10

-5

1.7 1.75 1.8 1.85 1.9 1.95 2

Retur n Loss (dB)

Frequency (GHz)

Return Loss vs. Frequency

T=25oC

S11 S22

-60

-55

-50

-45

-40

-35

10 11 12 13 14 15 16 17 18

ACLR (dBc)

Output Power (dBm )

ACLR vs. Output Power

T=25°C

1805 MHz 1842 MH z 1880 MHz

W-CDMA, TM

1+64DPC H, PAR=10 .2d B @ 0.01%

probability, 3.84 MHz BW

579111315

OIP3 (dBm)

Output Power/T one (dBm)

OIP3 vs. Output Power/Tone

T=25°C, 1MHz tone spacing

1805 MHz 1842 MHz 1880 MHz

2.0 pF

3.9 pF

1.5 pF

W = 31 mil

L = 150 mil W = 31 mil

L = 310 mil

Specifications and information are subject to change without notice

TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-s ales@tqs.com • Web site: www.TriQuint.com Page 7 of 14 June 2010

AH128

¼W Hi

h Linearit

InGaP HBT Am

lifier

1930-1990 MHz Reference Design (AH128-89PCB1960)

W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB @ 0.01% Probability, 3.84 MHz BW

Typical W-CDMA Performance at 25°C

Frequency (MHz) 1930 1960 1990 Units

Gain 17.6 17.6 17.5 dB

Input Return Loss 14 15 14 dB

Output Return Loss 11 11 11 dB

ACLR

Pout=+15 dBm -50 -50 -50 dBc

Output P1dB +25.5 +25.5 +25.5 dBm

Output IP3

Pout=11dBm/tone, 1MHz spacing +39.5 +40 +40 dBm

Noise Figure 4.4 4.6 5.0 dB

Quiescent Current, Icq 115 mA

Vcc +5 V

Notes:

1. The primary RF microstrip line is 50 Ω.

2. Components shown on the silkscreen but not on the schematic are not used.

3. 0 Ω jumpers can be replaced with copper trace in target application.

4. The edge of C9 is placed at 265 mils from AH128 RFout pin. (29 o @ 1960 MHz)

5. The edge of R2 is placed against the edge of C9.

6. The edge of R1 is placed at 100 mils from AH128 RFin pin. (11 o @ 1960 MHz)

7. The edge of C10 is placed 220 mils from the edge of R1. (24 o @ 1960 MHz)

1.92 1.94 1.96 1.98 2.00

Gain (dB)

Frequency

(GHz)

Gain vs. Bias Voltag e

T=25°C

4.75V 5V 5.25V

-25

-20

-15

-10

-5

1.92 1.94 1.96 1.98 2.00

S1 1 (dB )

Frequency

(GHz)

S11 vs Bias Voltage

T=25°C

4.75V 5V 5.25V

-25

-20

-15

-10

-5

1.92 1.94 1.96 1.98 2.00

S1 1 (dB )

Frequency

(GHz)

S22 vs Bias Voltage

T=25°C

4.75V 5V 5.25V

20 21 22 23 24 25 26

Gai n (d B)

Output Power (

dBm

)

Gain vs. Output Average Power

f=1 960 MH z

100

110

120

130

140

150

160

12 14 16 18 20 22 24

Collector Current (mA)

Output P ower (dBm)

Current vs Output Average Power vs. Frequency

T=25°C

1930 MHz 1960 MHz 1990 MHz

1.93 1.94 1.95 1.96 1.97 1.98 1.99

P1dB (dBm)

Frequency (GHz)

P1dB vs. Frequency

T=25°C

2345678

Output P owe r (dBm)

Input P ower (dBm)

Outp ut Average Power vs Inpu t Average Power

T=25°C

1930 MHz 1960 MHz 1990 MHz

-65

-60

-55

-50

-45

-40

10 12 14 16 18

ACLR (dBc)

Output Powe r (dBm)

ACLR vs. Output Average Power vs. Frequency

T=25°C

1930 MHz 1960 MHz 1990 MHz

W‐CDMA3GPPTestModel1+64DPCH

PAR=10.3dB@0.01%Probability

3.84MHzBW

8 9 10 11 12 13 14 15 16

OIP3 (dBm)

Output P ower/ T one (dBm)

OIP3 vs. Output Power/Tone vs. Frequency

T=25°C, 1 MHz spacing

1930 MHz 1960 MHz 1990 MHz

Specifications and information are subject to change without notice

TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-s ales@tqs.com • Web site: www.TriQuint.com Page 8 of 14 June 2010

AH128

¼W Hi

h Linearit

InGaP HBT Am

lifier

1930-1990 MHz Reference Design (AH128-89PCB1960)

W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB @ 0.01% Probability, 3.84 MHz BW

1.93 1.94 1.95 1.96 1.97 1.98 1.99

OIP3 (dBm)

Frequency (GHz)

OIP3 vs. Frequency

T=25°C, 1 MHz spacing, 11 dBm/tone

100

110

120

130

140

150

160

12 14 16 18 20 22 24

Collector Current (mA)

Output P ower (dBm)

Curr ent vs Out pu t Average Po wer vs. Bias Voltage

T=25° C , f =1960 MHz

4.75 V 5V 5.25V

1.93 1.94 1.95 1.96 1.97 1.98 1.99

P1dB (dBm)

Frequency (GHz)

P1dB vs. Frequency vs Bias Voltage

T=25°C

4.75V 5V 5.25V

8 9 10 11 12 13 14 15 16

OIP3 (dBm)

Output P ower/ T one (dBm)

OIP3 vs. Outp ut Average Power vs. Bias Voltage

T=25°C, 1 MHz spacing, f=1960 MHz

4.75V 5V 5.25V

4.75 4.85 4.95 5.05 5.15 5.25

NF (dB)

Voltage (V)

Noise Figure vs. Bias Vo ltage

T=25° C, f= 196 0 MHz

Specifications and information are subject to change without notice

TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-s ales@tqs.com • Web site: www.TriQuint.com Page 9 of 14 June 2010

AH128

¼W Hi

h Linearit

InGaP HBT Am

lifier

2110-2170 MHz Reference Design (AH128-89PCB2140)

W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB @ 0.01% Probability, 3.84 MHz BW

Typical W-CDMA Performance at 25°C

Frequency (MHz) 2110 2140 2170 Units

Gain 16.9 16.9 16.7 dB

Input Return Loss 15 15 14 dB

Output Return Loss 12 11 11 dB

ACLR

Pout=+15 dBm -49 -50 -49 dBc

Output P1dB +24.8 +25 +25 dBm

Output IP3

Pout=10dBm/tone, 1MHz spacing +40 +40 +39 dBm

Noise Figure 4.6 4.6 4.7 dB

Quiescent Current, Icq 115 mA

Vcc +5 V

Notes:

1. The primary RF microstrip line is 50 Ω.

2. Components shown on the silkscreen but not on the schematic are not used.

3. 0 Ω jumpers can be replaced with copper trace in target application.

4. The edge of C9 is placed at 250 mils from AH128 RFout pin. (29.6 o @ 2140 MHz)

5. The edge of R1 is placed at 100 mils from AH128 RFin pin. (12 o @ 2140 MHz)

6. The edge of C10 is placed 180 mils from the edge of R1. (21.3 o @ 2140 MHz)

2.10 2.12 2.14 2.16 2.18 2.20

Gain (dB)

Frequency

(GHz)

Gain v s. Freque ncy

+85°C +25°C -40°C

-25

-20

-15

-10

-5

2.10 2.12 2.14 2.16 2.18 2.20

S1 1 (dB )

Frequency

(GHz)

Return Loss

+85°C +25°C -40°C

-25

-20

-15

-10

-5

2.10 2.12 2.14 2.16 2.18 2.20

S22 (dB)

Frequency

(GHz)

Return Loss

+85°C +25°C -40°C

-40 -15 10 35 60 85

Gai n (d B)

Tem purature (°C)

Gain vs. Tem perature vs Frequency

21 10 MHz 2140 MHz 21 70 MHz

100

110

120

130

140

150

160

12 14 16 18 20 22 24

Collector Current (mA)

Output P ower (dBm)

Current vs Output Average Power vs. Frequency

T=25°C

21 10 MHz 2140 MHz 2170 MHz

2.11 2.12 2.13 2.14 2.15 2.16 2.17

P1dB (dBm)

Frequency (GHz)

P1dB vs. Frequency vs. Temperature

+85°C +25°C -40°C

3456789

Output Power (dBm)

Input P ower (dBm)

Outp ut Average Power vs Inpu t Average Power

T=25°C

21 10 MHz 2140 MHz 2170 MHz

-65

-60

-55

-50

-45

-40

10 12 14 16 18

ACLR (dBc)

Output Powe r (dBm)

ACLR vs. Output Average Power vs. Frequency

T=25°C

21 10 MHz 2140 MHz 2170 MHz

W‐CDMA3GPPTestModel1+64DPCH

PAR=10.3dB@0.01%Probability

3.84MHzBW

-65

-60

-55

-50

-45

-40

10 12 14 16 18

ACLR (dBc)

Output Powe r (dBm)

ACLR vs. Output Average Power vs. Temperature

f=2140 GHz

+85°C +25°C -40°C

W‐CDMA3GPPTestModel1+64DPCH

PAR=10.3dB@0.01%Probability

3.84MHzBW

Specifications and information are subject to change without notice

TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-s ales@tqs.com • Web site: www.TriQuint.com Page 10 of 14 June 2010

AH128

¼W Hi

h Linearit

InGaP HBT Am

lifier

2110-2170 MHz Reference Design (AH128-89PCB2140)

W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB @ 0.01% Probability, 3.84 MHz BW

2.10 2.12 2.14 2.16 2.18 2.20

NF (dB)

Frequency (GHz)

Noise Figure vs. Frequency vs. Temperature

+85°C +25°C -40°C

8 9 10 11 12 13 14 15 16

OIP3 (dBm)

Output P ower/ T one (dBm)

OIP3 vs. Output Power/Tone vs. Temperature

f=2140 GHz, 1 MHz spacing

+85°C +25°C -40°C

8 9 10 11 12 13 14 15 16

OIP3 (dBm)

Output P ower/ T one (dBm)

OIP3 vs. Output Power/Tone vs. Frequency

T=25° C, 1 MHz spacing

21 10 MHz 21 40 MHz 2170 MHz

2.11 2.12 2.13 2.14 2.15 2.16 2.17

OIP3 (dBm)

Frequency (GHz)

OIP3 vs. Frequency

T=25° C, 1 MHz spacing, 10 dBm/t one

8 101214161820

Collector Efficiency (%)

Output P ower (dBm)

Efficiency vs Outp ut Average Power vs. Frequency

T=25°C

21 10 MHz 2140 MHz 2170 MHz

Specifications and information are subject to change without notice

TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-s ales@tqs.com • Web site: www.TriQuint.com Page 11 of 14 June 2010

AH128

¼W Hi

h Linearit

InGaP HBT Am

lifier

2300-2400 MHz Reference Design

802.16-2004 O-FDMA, 64QA M-1/2, 1024-FFT, 20 sy mbols and 30 subchannels, 5 MH z Carrier B W

Typical Performance at 25°C

Frequency (MHz) 2300 2350 2400 Units

Gain 16.0 16.0 15.8 dB

Input Return Loss 15 27 19 dB

Output Return Loss 10.4 9.5 8.8 dB

ACLR

Pout=+15 dBm -49 -49.3 -49.5 dBc

EVM

802.16-2004 OFDMA, 64QAM, PAR

= 10.2dB at Pout=15dBm

1.26 1.2 1.13 %

Output P1dB +25 +25 +25 dBm

Output IP3

Pout=10dBm/tone, 1MHz spacing +40.0 +40.3 +40.0 dBm

Quiescent Current, Icq 115 mA

Vcc +5

Notes:

1. The primary RF microstrip line is 50 Ω.

2. Components shown on the silkscreen but not on the schematic are not used.

3. 0 Ω jumpers can be replaced with copper trace in target application.

4. The edge of C9 is placed at 245 mils from AH128 RFout pin (31.9 o @ 2350 MHz).

5. The edge of R1 is placed at 100 mils from AH128 RFin pin (13.0 o @ 2350 MHz).

6. The edge of C10 is placed 80 mils from the edge of R1 (10.4 o @ 2350 MHz).

2250 2300 2350 2400 2450

Gain (dB )

Frequency (MHz)

Gain vs. Frequency

T=25°C

-30

-25

-20

-15

-10

-5

2250 2300 2350 2400 2450

Return Loss (dB)

Frequency (MHz)

Return Loss vs. Frequency

T=25°C

S11 S22

-65

-60

-55

-50

-45

8 9 10 11 12 13 14 15 16

ACLR (dBc)

Output Power (dBm)

ACLR vs. Output A verage Power

T=25°C

2300 MHz 2350 MHz 2400 MHz

W-CDMA 3GPP Test Model 1+64

DPCH PAR = 9.7 dB @ 0 .01%

Probabilit y 3.84 MHz BW

0.0

0.5

1.0

1.5

2.0

8 9 10 11 12 13 14 15 16

EVM (%)

Output P ower (dBm)

EVM vs. Out p ut Average Po wer

T=25°C

2300 MHz 2350 MHz 2400 MHz

802.16-2004 O-FDMA, 64QAM-1/2

1024-FFT, 20 symbols and 30

subchannels, 5 MHz Carrier BW

6 8 10 12 14 16

OIP 3 (dBm)

Output P ower /T one (dBm)

OIP3 vs. Output Power/Tone

T=25°C

2300 MHz 2350 MHz 2400 MHz

Specifications and information are subject to change without notice

TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-s ales@tqs.com • Web site: www.TriQuint.com Page 12 of 14 June 2010

AH128

¼W Hi

h Linearit

InGaP HBT Am

lifier

1.8-2.7 GHz Reference Design

Performance at 25°C

Frequency (GHz) 1.8 2.1 2.4 2.7 Units

Gain 14.2 13.4 12.6 11.2 dB

Input Return Loss 7.1 7.0 6.0 4.8 dB

Output Return Loss 11.7 16.5 14.1 8.9 dB

Output P1dB +25.4 +25.7 +25.3 +24.0 dBm

Output IP3

Pout=+11 dBm/tone, 1MHz spacing +45 +46 +46 +39 dBm

Quiescent Current, Icq 115 mA

Vcc +5 V

Notes:

1. The primary RF microstrip line is 50 Ω.

2. Components shown on the silkscreen but not on the schematic are not used.

3. 0 Ω jumpers can be replaced with copper trace in target application.

4. The left edge of C9 is placed 210 mils from the right edge of the AH128 RFout pin

(27.9°@2400MHz).

5. The right edge of R3 is placed adjacent to the AH128 RFin pin.

6. The right edge of C10 is placed adjacent to the left edge of R3.

1800 2100 2400 2700

Gain(dB)

Frequency(MHz)

Gainvs.Frequency

T=25°C

‐20

‐16

‐12

‐8

‐4

1800 2100 2400 2700

ReturnLoss(dB)

Frequency(MHz)

ReturnLossvs.Frequency

T=25°C

S11 S22

3 5 7 9 11 13 15

OIP3(dBm)

OutputPower/Tone(dBm)

OIP3vs.OutputPower/Tone

T=25°C,1MHztonespacing

1800MHz 2100MHz 2400MHz 2700MHz

170019002100230025002700

P1dB(dBm)

Frequency(MHz)

P1dBvs.Frequency

T=25°C

Thisreferencedesignhasbeenoptimizedtoprovide>+44dBmOIP3overabroadrangeoffrequenciesbypurposelydetuning

theinputimpedancematch.Tuningadjustmentscanimproveinputreturnlosswithreducedlinearity.

C2R2

C1 C

C10

Specifications and information are subject to change without notice

TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-s ales@tqs.com • Web site: www.TriQuint.com Page 13 of 14 June 2010

AH128

¼W Hi

h Linearit

InGaP HBT Am

lifier

2.5-2.7 GHz Reference Design (AH128-89PCB2600)

802.16-2004 O-FDMA, 64QA M-1/2, 1024-FFT, 20 sy mbols and 30 subchannels, 5 MH z Carrier B W

Typical O-FDMA Performance at 25°C

Frequency (GHz) 2.5 2.6 2.7 Units

Gain 14.7 15.1 14.9 dB

Input Return Loss 7.1 13 13 dB

Output Return Loss 15 10 8.1 dB

EVM

Pout=+17 dBm 2.4 2.4 2.3 %

Output P1dB +24.5 +24.8 +24.7 dBm

Output IP3

Pout=+8 dBm/tone, 1MHz spacing +41.1 +40.8 +41.5 dBm

Quiescent Current, Icq 115 mA

Vcc +5

C2R2

C10

Notes:

1. The primary RF microstrip line is 50 Ω.

2. Components shown on the silkscreen but not on the schematic are not used.

3. 0 Ω jumpers can be replaced with copper trace in target application.

4. The edge of C9 is placed at 230 mils from AH128 RFout pin. (32o @ 2.5 GHz)

5. The edge of R1 is placed at 100 mils from AH128 RFin pin. (14o @ 2.5 GHz)

6. The edge of C10 is placed 45 mils from the edge of R1. (6.2o @ 2.5 GHz)

2400 2500 2600 2700 2800

Gai n (dB )

Frequency (MHz)

Gain vs . Frequenc y

T=25°C

-30

-25

-20

-15

-10

-5

2.4 2.5 2.6 2.7 2.8

Return Loss (dB)

Frequency (GHz)

Return Loss vs. Frequency

T=25°C

S11 S22

EVM vs. Output Average Power vs. Frequency

T=25°C

8 1012141618

Output Power (dBm)

EVM (%)

2.5 GHz 2.6 GHz 2.7 GHz

ACLR vs. Output Average Power vs. Frequency

T=25°C

-60

-55

-50

-45

-40

-35

8 1012141618

Output Power (dBm)

ACLR (dBc)

2.5 GHz 2.6 GHz 2.7 GHz

W-CDMA 3GPP Test Model 1+64 DPCH

PAR = 10.2 dB @ 0.01% Probabili ty

3.84 MHz BW

OIP3 vs. Output Power /Tone vs. Frequency

T=25°C

6 8 10 12 14 16 18 20

Output Power/Tone (dBm)

OIP3 (dBm)

2.5 GHz 2.6 GHz 2.7 GHz

Efficiency vs Output Average Power vs. Frequency

T=25°C

8 1012141618

Output Power (dBm )

Colle cto r E f ficie n c y (% )

2.5 GHz 2.6 GHz 2.7 GHz

45 230

Specifications and information are subject to change without notice

TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-s ales@tqs.com • Web site: www.TriQuint.com Page 14 of 14 June 2010

AH128

¼W Hi

h Linearit

InGaP HBT Am

lifier

Mechanical Information

This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded

(maximum 245 °C reflow temperature) soldering processes. The plating material on the leads is NiPdAu.

Outline Drawing

Land Pattern

Product Marking

The AH128 will be marked with an

“AH128G” designator with a lot code marked

below the part designator. The “Y” represents

the last digit of the year the part was

manufactured, the “XXX” is an auto-

generated number, and “Z” refers to a wafer

number in a lot batch.

Tape and reel specifications for this part are

located on the website in the “Application

Notes” section.

MSL / ESD Rating

ESD Rating: Class 2

Value: Passes 2000V to <4000V

Test: Human Body Model (HBM)

Standard: JEDEC Standard JESD22-A114

ESD Rating: Class IV

Value: Passes ≥ 2000V min.

Test: Charged Device Model (CDM)

Standard: JEDEC Standard JESD22-C101

MSL Rating: Level 3 at +260 °C convection reflow

Standard: JEDEC Standard J-STD-020

Mounting Config. Notes

1. Ground / thermal vias are critical for the proper performance of

this device. Vias should use a .35mm (#80 / .0135”) diameter

drill and have a final plated thru diameter of .25 mm (.010”).

2. Add as much copper as possible to inner and outer layers near

the part to ensure optimal thermal performance.

3. Mounting screws can be added near the part to fasten the board

to a heatsink. Ensure that the ground / thermal via region

contacts the heatsink.

4. Do not put solder mask on the backside of the PC board in the

region where the board contacts the heatsink.

5. RF trace width depends upon the PC board material and

construction.

6. Use 1 oz. Copper minimum.

7. All dimensions are in millimeters (inches). Angles are in

degrees.

YXXX-Z

AH128G